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    Abstract: No abstract text available
    Text: Infrared LED Chip OPA9415EDD GaAlAs/GaAs 1. Material Substrate Epitaxial Layer 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy GaAs (N Type) GaAlAs(P/N Type) Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Reverse Voltage


    Original     		OPA9415EDD 250mA 128um --------------------------11mil PDF

    OPA9415EDD

    Abstract: No abstract text available
    Text: Infrared LED Chip OPA9415EDD GaAlAs/GaAs 1. Material Substrate Epitaxial Layer GaAs N Type GaAlAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Min Typ Max


    Original     		OPA9415EDD 250mA 128um --------------------------11mil OPA9415EDD PDF