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    OPA883

    Abstract: OPA8830Q
    Text: OPA8830Q Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage


    Original     		PDF OPA8830Q --------------------100um OPA883 OPA8830Q

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    Abstract: No abstract text available
    Text: OPA8830Q Infrared LED Chip GaAlAs/GaAlAs High Speed 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage


    Original     		PDF OPA8830Q --------------------100um