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    OPA8537RC

    Abstract: infrared led chip
    Text: Infrared LED Chip OPA8537RC GaAs/GaAlAs 1. Material Substrate GaAs N Type Removed Epitaxial Layer GaAlAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbo Min 3. Electro-Optical Characteristics Forward Voltag VF Typ


    Original     		OPA8537RC 128um 210um 330um 250um OPA8537RC infrared led chip PDF

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    Abstract: No abstract text available
    Text: Infrared LED Chip OPA8537RC GaAs/GaAlAs 1. Material Substrate GaAs N Type Removed Epitaxial Layer GaAlAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbo Min 3. Electro-Optical Characteristics Forward Voltag VF Typ


    Original     		OPA8537RC 128um 210um 330um 250um PDF