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    led 770 nm

    Abstract: OPA7740EDD 78mil
    Text: Infrared LED Chip OPA7740EDD AlGaAs / GaAs 1. Material Substrate GaAs N Type Epitaxial Layer AlGaAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF Typ


    Original     		PDF OPA7740EDD 350mA 120um led 770 nm OPA7740EDD 78mil

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    Abstract: No abstract text available
    Text: Infrared LED Chip OPA7740EDD AlGaAs / GaAs 1. Material Substrate GaAs N Type Epitaxial Layer AlGaAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF Typ


    Original     		PDF OPA7740EDD 350mA 120um