ON SEMICONDUCTOR MARKING N20E Search Results

ON SEMICONDUCTOR MARKING N20E Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MHM411-21		Murata Manufacturing Co Ltd	Ionizer Module, 100-120VAC-input, Negative Ion
SCL3400-D01-1		Murata Manufacturing Co Ltd	2-axis (XY) digital inclinometer
SCC433T-K03-004		Murata Manufacturing Co Ltd	2-Axis Gyro, 3-axis Accelerometer combination sensor
MRMS591P		Murata Manufacturing Co Ltd	Magnetic Sensor
SCR410T-K03-PCB		Murata Manufacturing Co Ltd	1-Axis Gyro Sensor on Evaluation Board

ON SEMICONDUCTOR MARKING N20E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
n20eg Abstract: 6n20e N20E V750C on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4 Text: MTD6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast	Original	MTD6N20E MTD6N20E/D n20eg 6n20e N20E V750C on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4	PDF
n20eg Abstract: 6N20E 369D AN569 MTD6N20E 6n20eg Text: MTD6N20E Power MOSFET 6 A, 200 V, N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching	Original	MTD6N20E MTD6N20E/D n20eg 6N20E 369D AN569 MTD6N20E 6n20eg	PDF
Untitled Abstract: No abstract text available Text: MTD6N20E Power MOSFET 6 A, 200 V, N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching	Original	MTD6N20E MTD6N20E/D	PDF
Untitled Abstract: No abstract text available Text: MTD6N20E Power MOSFET 6 A, 200 V, N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching	Original	MTD6N20E MTD6N20E/D	PDF
N20E Abstract: on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4 6n20e Text: MTD6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N-Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast	Original	MTD6N20E MTD6N20E/D N20E on semiconductor marking n20e 369D AN569 MTD6N20E MTD6N20E1 MTD6N20ET4 6n20e	PDF
N20E Abstract: t4n20e on semiconductor marking n20e 4n20e 369D AN569 MTD4N20E MTD4N20ET4 MARKING CODE diode sod123 t4 T4 N20E Text: MTD4N20E Preferred Device Power MOSFET 4 Amps, 200 Volts N−Channel DPAK Symbol Value Unit Drain−Source Voltage VDSS 200 Vdc Drain−Gate Voltage RGS = 1.0 MΩ VDGR 200 Vdc Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 10 ms) VGS	Original	MTD4N20E MTD4N20E/D N20E t4n20e on semiconductor marking n20e 4n20e 369D AN569 MTD4N20E MTD4N20ET4 MARKING CODE diode sod123 t4 T4 N20E	PDF