OMNIFET
Abstract: 1N4148 DO35 AS8401 BC141 BC141-10 j20 Schematic sgs bc141
Text: AS8401 Application Note Evaluation Board AS8401 Evaluation Board for the Multipurpose control ASIC AS8401 for OMNIFET Application Note Multipurpose control ASIC for OMNINET – Application Note AS8401 1. Key Features • Shows the general usage of the multipurpose control ASIC AS8401 for OMNIFET SGS
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AS8401
AS8401
com/stonline/products/selector/314
OMNIFET
1N4148 DO35
BC141
BC141-10
j20 Schematic
sgs bc141
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MIKRO PF REGULATOR
Abstract: automatic change over switch circuit diagram 27OC AS8401 OMNIFET
Text: Austria Mikro Systeme International AG AS8401 Multipurpose control ASIC for OMNIFET Data Sheet Multipurpose control ASIC for OMNINET – Data Sheet AS8401 Austria Mikro Systeme International AG Key Features • • • • • • • • • • Multipurpose control ASIC for OMNIFET SGS Thompson intelligent power FET family
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AS8401
MIKRO PF REGULATOR
automatic change over switch circuit diagram
27OC
AS8401
OMNIFET
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Untitled
Abstract: No abstract text available
Text: VND5N07 OMNIFET II fully autoprotected Power MOSFET Features Max. on-state resistance per ch. Current limitation (typ) Drain-Source clamp voltage • Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp RDS (on)
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VND5N07
O-252
O-251
DocID4335
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Untitled
Abstract: No abstract text available
Text: VNB35NV04-E VNP35NV04-E, VNV35NV04-E OMNIFET II fully autoprotected Power MOSFET Datasheet - production data • Direct access to the gate of the Power MOSFET analog driving • Compatible with standard Power MOSFET 10 Description 3 1 1 D2PAK PowerSO-10
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VNB35NV04-E
VNP35NV04-E,
VNV35NV04-E
PowerSO-10
VNB35NV04-E,
VNP35NV04-E
VNV35NV04-E
O-220
DocID023550
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OMNIFET
Abstract: JESD97 VNS3NV04D-E VNS3NV04TR-E
Text: VNS3NV04D-E "OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET Features RDS on TYPE VNS3NV04D-E 120 mΩ (*) Ilim Vclamp 3.5 A (*) 40 V (*) (*) Per each device • LINEAR CURRENT LIMITATION ■ THERMAL SHUT DOWN ■ SHORT CIRCUIT PROTECTION ■ INTEGRATED CLAMP
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VNS3NV04D-E
VNS3NV04D-E
50KHz
OMNIFET
JESD97
VNS3NV04TR-E
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Untitled
Abstract: No abstract text available
Text: VNL5300S5-E OMNIFET III fully protected low-side driver Datasheet - production data Description The VNL5300S5-E is a monolithic device made using STMicroelectronics VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery.
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VNL5300S5-E
VNL5300S5-E
DocID023394
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Untitled
Abstract: No abstract text available
Text: VNL5300S5-E OMNIFET III fully protected low-side driver Datasheet - production data Description The VNL5300S5-E is a monolithic device made using STMicroelectronics VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery.
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VNL5300S5-E
VNL5300S5-E
DocID023394
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VNL5050N3TR-E
Abstract: VNL5050N3-E
Text: VNL5050N3-E VNL5050S5-E OMNIFET III fully protected low-side driver Datasheet - production data Description 2 1 2 The VNL5050N3-E and VNL5050S5-E are monolithic devices made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads
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VNL5050N3-E
VNL5050S5-E
VNL5050N3-E
VNL5050S5-E
OT-223
DocID15917
VNL5050N3TR-E
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Untitled
Abstract: No abstract text available
Text: VNL5090N3-E VNL5090S5-E OMNIFET III fully protected low-side driver Datasheet - production data Description 2 1 2 The VNL5090N3-E and VNL5090S5-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for driving resistive or inductive loads
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VNL5090N3-E
VNL5090S5-E
VNL5090N3-E
VNL5090S5-E
OT-223
DocID022568
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VND14NV04-1-E
Abstract: VND14NV04 VND14NV0413TR VND14NV04-E OMNIFET VND14NV04 pulse load calculation formula for single pulse VND14NV04-1 VNB14NV04 VNB14NV0413TR VNB14NV04-E
Text: VNB14NV04, VND14NV04 VND14NV04-1 "OMNIFET II" fully autoprotected Power MOSFET Features TYPE RDS on Ilim Vclamp VNB14NV04 VND14NV04 VND14NV04-1 35 mΩ 12 A 40 V • Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp
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VNB14NV04,
VND14NV04
VND14NV04-1
VNB14NV04
VND14NV04,
VND14NV04-1
VND14NV04-1-E
VND14NV04
VND14NV0413TR
VND14NV04-E
OMNIFET VND14NV04
pulse load calculation formula for single pulse
VNB14NV04
VNB14NV0413TR
VNB14NV04-E
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Untitled
Abstract: No abstract text available
Text: VNL5030J-E VNL5030S5-E OMNIFET III fully protected low-side driver Datasheet - production data Description PowerSSO-12 The VNL5030J-E and VNL5030S5-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for driving resistive or inductive loads
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VNL5030J-E
VNL5030S5-E
PowerSSO-12
VNL5030J-E
VNL5030S5-E
DocID022767
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Untitled
Abstract: No abstract text available
Text: VNP8T Omnifet II fully autoprotected Power MOSFET Datasheet - production data Description The VNP8T is a monolithic device designed in STMicroelectronics VIPower® M0-3 technology, intended for the replacement of standard Power MOSFETs from DC up to 50 kHz applications.
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DocID022888
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Untitled
Abstract: No abstract text available
Text: VNP8T Omnifet II fully autoprotected Power MOSFET Datasheet - production data Description The VNP8T is a monolithic device designed in STMicroelectronics VIPower® M0-3 technology, intended for the replacement of standard Power MOSFETs from DC up to 50 kHz applications.
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DocID022888
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Untitled
Abstract: No abstract text available
Text: VNL5300S5-E OMNIFET III fully protected low-side driver Datasheet - production data Description The VNL5300S5-E is a monolithic device made using STMicroelectronics VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery.
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VNL5300S5-E
VNL5300S5-E
DocID023394
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Untitled
Abstract: No abstract text available
Text: VNP35N07-E, VNB35N07-E OMNIFET fully autoprotected Power MOSFET Datasheet - production data Description 3 3 1 The VNP35N07-E and VNB35N07-E are monolithic devices made using STMicroelectronics VIPower technology, intended for replacement of standard Power
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VNP35N07-E,
VNB35N07-E
VNP35N07-E
VNB35N07-E
O-220
VNP35N07-E
DocID023779
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ISD 3900
Abstract: No abstract text available
Text: VNS3NV04D-E OMNIFET II fully autoprotected Power MOSFET Features Max On-State resistance per ch. RON 120mΩ Current limitation (typ) ILIMH 3.5A VCLAMP 40V Drain-Source clamp voltage SO-8 • Linear current limitation ■ Thermal shut down ■ Short circuit protection
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VNS3NV04D-E
VNS3NV04D-E
VNS3NV04DTR-E
ISD 3900
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JESD97
Abstract: VNS3NV04D-E VNS3NV04DTR-E
Text: VNS3NV04D-E OMNIFET II fully autoprotected Power MOSFET Features Max On-State resistance per ch. RON 120mΩ Current limitation (typ) ILIMH 3.5A VCLAMP 40V Drain-Source clamp voltage SO-8 • Linear current limitation ■ Thermal shut down ■ Short circuit protection
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VNS3NV04D-E
VNS3NV04D-E
JESD97
VNS3NV04DTR-E
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VNS1NV04DP-E
Abstract: 2010 so-8 VNS1NV04DP vns1nv04dptr-e
Text: VNS1NV04DP-E OMNIFET II fully autoprotected Power MOSFET Features Max On-state resistance 1 Current limitation (typ) RDS(ON) 250mΩ (1) Drain-Source clamp voltage (1) ILIMH 1.7A VCLAMP 40V 1. Per each device. SO-8 • Linear current limitation ■ Thermal shutdown
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VNS1NV04DP-E
VNS1NV04DP-E
2010 so-8
VNS1NV04DP
vns1nv04dptr-e
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VNS1NV04DP
Abstract: VNS1NV04D vns1nv04dpe
Text: VNS1NV04DP-E OMNIFET II fully autoprotected Power MOSFET Features Max On-state resistance 1 Current limitation (typ) RDS(ON) 250mΩ (1) Drain-Source clamp voltage (1) ILIMH 1.7A VCLAMP 40V 1. Per each device. SO-8 • Linear current limitation ■ Thermal shutdown
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VNS1NV04DP-E
2002/95/EC
VNS1NV04DP-E
VNS1NV04DP
VNS1NV04D
vns1nv04dpe
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Untitled
Abstract: No abstract text available
Text: VNLD5300-E OMNIFET III fully protected low-side driver Datasheet - production data Description The VNLD5300-E is a monolithic device made using STMicroelectronics VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in
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VNLD5300-E
VNLD5300-E
DocID023282
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Untitled
Abstract: No abstract text available
Text: VNLD5300-E OMNIFET III fully protected low-side driver Datasheet - preliminary data Description The VNLD5300-E is a monolithic device made using STMicroelectronics VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in
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VNLD5300-E
VNLD5300-E
DocID023282
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Untitled
Abstract: No abstract text available
Text: VNLD5300-E OMNIFET III fully protected low-side driver Datasheet - preliminary data Description The VNLD5300-E is a monolithic device made using STMicroelectronics VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in
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VNLD5300-E
VNLD5300-E
DocID023282
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Untitled
Abstract: No abstract text available
Text: VND5N07-E OMNIFET II fully autoprotected Power MOSFET Datasheet - production data Description 3 DPAK TO-252 The VND5N07-E is a monolithic device designed using STMicroelectronics VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz
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VND5N07-E
O-252
VND5N07-E
O-251
DocID025077
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Untitled
Abstract: No abstract text available
Text: VNLD5300-E OMNIFET III fully protected low-side driver Datasheet - production data Description The VNLD5300-E is a monolithic device made using STMicroelectronics VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in
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VNLD5300-E
VNLD5300-E
DocID023282
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