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    OMNI SPECTRA TEST FIXTURE Search Results

    OMNI SPECTRA TEST FIXTURE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    FO-62.5LPBMT0-001 Amphenol Cables on Demand Amphenol FO-62.5LPBMT0-001 MT-RJ Connector Loopback Cable: Multimode 62.5/125 Fiber Optic Port Testing .1m Datasheet
    FO-9LPBMTRJ00-001 Amphenol Cables on Demand Amphenol FO-9LPBMTRJ00-001 MT-RJ Connector Loopback Cable: Single-Mode 9/125 Fiber Optic Port Testing .1m Datasheet
    SF-SFP28LPB1W-3DB Amphenol Cables on Demand Amphenol SF-SFP28LPB1W-3DB SFP28 Loopback Adapter Module for SFP28 Port Compliance Testing - 3dB Attenuation & 1W Power Consumption Datasheet
    FO-50LPBMTRJ0-001 Amphenol Cables on Demand Amphenol FO-50LPBMTRJ0-001 MT-RJ Connector Loopback Cable: Multimode 50/125 Fiber Optic Port Testing .1m Datasheet
    SF-SFPPLOOPBK-003.5 Amphenol Cables on Demand Amphenol SF-SFPPLOOPBK-003.5 SFP+ Loopback Adapter Module for SFP+ Port Compliance Testing - 3.5dB Copper/Optical Cable Emulation Datasheet
    FO-62.5LPBLC0-001 Amphenol Cables on Demand Amphenol FO-62.5LPBLC0-001 LC Connector Loopback Cable: Multimode 62.5/125 Fiber Optic Port Testing .1m Datasheet

    OMNI SPECTRA TEST FIXTURE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LDMOS 15w

    Abstract: TRANSISTOR Z4 ATC100A RO4350 omni spectra
    Text: RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V 11/28/05 MAPL000817-015C00 Preliminary Features Package Style Designed for broadband commercial applications up to 1.7GHz • High Gain, High Efficiency and High Linearity • Typical P1dB performance at 960MHz,


    Original     		PDF MAPL000817-015C00 960MHz, 26Vdc, 960MHz LDMOS 15w TRANSISTOR Z4 ATC100A RO4350 omni spectra

    ATC100a

    Abstract: TRANSISTOR Z4 LDMOS 15w OMNI SPECTRA OZ 960 omni spectra sma transistor z9 MAPL-000817-015C00 RO4350 1206cs
    Text: RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V 1/11/06 MAPL-000817-015C00 Preliminary Features Package Style Designed for broadband commercial applications up to 1.7GHz • High Gain, High Efficiency and High Linearity • Typical P1dB performance at 960MHz,


    Original     		PDF MAPL-000817-015C00 960MHz, 26Vdc, 960MHz ATC100a TRANSISTOR Z4 LDMOS 15w OMNI SPECTRA OZ 960 omni spectra sma transistor z9 MAPL-000817-015C00 RO4350 1206cs

    atc100a

    Abstract: omni spectra sma TRANSISTOR Z4 OZ 960 LDMOS 15w RO4350 25 pin microstrip connector transistor z9 transistor z5
    Text: RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V 6/30/05 MAPLST0817-015PP Preliminary Features Package Style Designed for broadband commercial applications up to 1.7GHz High Gain, High Efficiency and High Linearity Typical P1dB performance at 960MHz,


    Original     		PDF MAPLST0817-015PP 960MHz, 26Vdc, 960MHz atc100a omni spectra sma TRANSISTOR Z4 OZ 960 LDMOS 15w RO4350 25 pin microstrip connector transistor z9 transistor z5

    TRANSISTOR Z4

    Abstract: CHIP TRANSISTOR omni spectra capacitor 15 F 50 VDC ATC100A MAPLST0822-002PP RO4350 640457-4 RF transistor gain 20dB
    Text: RF Power Field Effect Transistor LDMOS, 800—2200 MHz, 2W, 28V 4/14/05 MAPLST0822-002PP Preliminary Features Package Style Designed for broadband commercial applications up to 2.2GHz High Gain, High Efficiency and High Linearity Ease of Design for Gain and Insertion Phase


    Original     		PDF MAPLST0822-002PP 17GHz, 28Vdc 28dBm -39dBc 11GHz PFP-16 960MHz, 26Vdc, 960MHz TRANSISTOR Z4 CHIP TRANSISTOR omni spectra capacitor 15 F 50 VDC ATC100A MAPLST0822-002PP RO4350 640457-4 RF transistor gain 20dB

    imd 5210

    Abstract: MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282SR1 MRF282ZR1 imd 5210 MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL

    100B270JCA500X

    Abstract: 100B390JCA500X 100B201JCA500X GX03005522 MRF282
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282SR1 MRF282ZR1 100B270JCA500X 100B390JCA500X 100B201JCA500X GX03005522 MRF282

    microstrip

    Abstract: microstrip resistor GX-0300-55-22 MJD320 Z7 transistor 10 watts FM transmitter MJD310 100B201JCA500X RE65G1R00 CDR33BX104AKWS
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier


    Original     		PDF MRF282SR1 MRF282ZR1 microstrip microstrip resistor GX-0300-55-22 MJD320 Z7 transistor 10 watts FM transmitter MJD310 100B201JCA500X RE65G1R00 CDR33BX104AKWS

    TL12

    Abstract: 2052-1618 mrf650
    Text: MOTOROLA Order this document by MRF650/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF650 Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz.


    Original     		PDF MRF650/D MRF650 MRF650 TL12 2052-1618

    OMNI SPECTRA

    Abstract: Rogers 6010.5 ATC100A PH2323-3 882 transistor
    Text: PH2323-3 CW Power Transistor 3.5W, 2.3 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • NPN Silicon microwave power transistor • Common base configuration • Class C operation • Interdigitated geometry • Diffused emitter ballasting resistors


    Original     		PDF PH2323-3 OMNI SPECTRA Rogers 6010.5 ATC100A PH2323-3 882 transistor

    882 transistor

    Abstract: omni spectra sma transistor power rating 5w transistor 882 ATC100A mallory 25 uF capacitor data sheet PH2323-5 omni spectra fixture
    Text: PH2323-5 CW Power Transistor 5W, 2.3 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • NPN silicon microwave power transistor • Common base configuration • Class C operation • Interdigitated geometry • Diffused emitter ballasting resistors


    Original     		PDF PH2323-5 882 transistor omni spectra sma transistor power rating 5w transistor 882 ATC100A mallory 25 uF capacitor data sheet PH2323-5 omni spectra fixture

    vk200 ferrite bead

    Abstract: MRF650 JMC5501 2052161802 RCA 1648 JMC501 TL11 TL12 VK200 c3b5
    Text: MOTOROLA Order this document by MRF650/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF650 Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics


    Original     		PDF MRF650/D MRF650 vk200 ferrite bead MRF650 JMC5501 2052161802 RCA 1648 JMC501 TL11 TL12 VK200 c3b5

    NPN microwave power transistor 865

    Abstract: omni spectra sma ATC100A PH2323-1 Noryl 1075
    Text: PH2323-1 CW Power Transistor 1W, 2.3 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • • • NPN silicon microwave power transistor Common base configuration Class C operation Interdigitated geometry Diffused emitter ballasting resistors


    Original     		PDF PH2323-1 NPN microwave power transistor 865 omni spectra sma ATC100A PH2323-1 Noryl 1075

    MJD310

    Abstract: mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282
    Text: Freescale Semiconductor Technical Data Rev. 13, 12/2004 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282SR1 MRF282ZR1 MJD310 mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282

    CAPACITOR chip murata mtbf

    Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136
    Text: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM


    Original     		PDF MRF15030/D MRF15030 MRF15030/D* CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM


    Original     		PDF MRF15030/D MRF15030 MRF15030/D*

    178 09T

    Abstract: capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.


    OCR Scan     		PDF BD135) BD136) GX-0300-55-22, MRF15030 178 09T capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor

    rohm mtbf

    Abstract: CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15030 The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM


    OCR Scan     		PDF MRF15030 BD135) BD136) GX-0300-55-22, MRF15030 rohm mtbf CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ

    power tr unit j122 5 pin

    Abstract: power tr unit j122 capacitor mallory CAPACITOR chip murata mtbf MUR5120T3 J119 transistor bd135 equivalent mallory 170
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.


    OCR Scan     		PDF BD135) BD136) GX-0300-55-22, MRF15090 power tr unit j122 5 pin power tr unit j122 capacitor mallory CAPACITOR chip murata mtbf MUR5120T3 J119 transistor bd135 equivalent mallory 170

    capacitor mallory

    Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 1000 watt Motorola power supply RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor bd136 equivalent rohm mtbf
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF15030 Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.


    OCR Scan     		PDF BD135) BD136) MRF15030 capacitor mallory RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 1000 watt Motorola power supply RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor bd136 equivalent rohm mtbf

    omni spectra sma

    Abstract: transistor n03 PH2856
    Text: Linear Accelerator Pulsed Power Transistor PH2856-3 3 Watts, 2.856 GHz, 12 is Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry


    OCR Scan     		PDF PH2856-3 Sb42205 0D013S3 TT50M50A ATC100A Sb4E20S Q0D1324 omni spectra sma transistor n03 PH2856

    DIODE ku 1490

    Abstract: capacitor mallory mallory 170
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information The R F Line MRF15090 N P N Silico n RF Pow er T ran sistor Designed for 26 volts microwave large-signal, common emitter, class A and class A B linear amplifier applications in industrial and commercial FM/AM


    OCR Scan     		PDF BD135) BD136) GX-0300-55-22, F15090 DIODE ku 1490 capacitor mallory mallory 170

    mallory 170

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15090 The RF Line NPN Silicon RF Power TVansistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM


    OCR Scan     		PDF MRF15090 BD135) BD136) GX-0300-55-22, MRF15090 mallory 170

    MOTOROLA ELECTROLYTIC CAPACITOR

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear am plifier applications in industrial and com m ercial FM/AM


    OCR Scan     		PDF MRF15090/D MOTOROLA ELECTROLYTIC CAPACITOR

    DIODE ku 1490

    Abstract: k 246 transistor 1.4901 bd135 equivalent
    Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear am plifier applications in industrial and com m ercial FM/AM


    OCR Scan     		PDF MRF15090/D DIODE ku 1490 k 246 transistor 1.4901 bd135 equivalent