NT 407 F TRANSISTOR
Abstract: NT 407 F MOSFET TRANSISTOR
Text: SK 260MB10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET N<AA NQAA S< S<F ?- L MJ K$G 407,- %*8,23.-, -', .6.,+ ?- L MJ ;IP> K$T O> *' W O &-T ?- L MJ ;IP> K$T O> ?Z Inverse diode SEMITOP 3 Mosfet Module S^ L [ S< S^F L [ S<F ?- L MJ ;IP> K$T
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260MB10
NT 407 F TRANSISTOR
NT 407 F MOSFET TRANSISTOR
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GP1FA513TZ0F
Abstract: GP1FA513TZ GP1FA513RZ0F GP1FA514 optical fiber free book 13B1 minijack Chapter
Text: Copyright 2005, Sharp Electronics Corp. All Rights Reserved. Chapter 11 – Use of Optical Fiber Links 11-1 Chapter 11 – Use of Optical Fiber Links 11-2 Chapter 11 – Use of Optical Fiber Links 11-3 Chapter 11 – Use of Optical Fiber Links 11-4 Chapter 11 – Use of Optical Fiber Links
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GP1FA514
GP1FA514TZ0F
GP1FA513RZ0F.
GP1FA514TZ0F
GP1FA513TZ0F
GP1FA513TZ
GP1FA513RZ0F
GP1FA514
optical fiber free book
13B1
minijack
Chapter
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gp2d04
Abstract: GP2S40Jj000F PQ07RX11 GL8ED48 GP1S525 PC8Q51 GP1A521 gp1sq59c GP2S27C GP2DM03
Text: Product Change Notification Type of Notification: Product Discontinuance ISSUE DATE LAST BUY DATE NOTIFICATION NO. LAST SHIP DATE 30 April 2005 31 December 2004 20050430-01 31 March 2005 This is to remind you that the following product s have been discontinued.
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PCN-1-14
PCN-1-15
gp2d04
GP2S40Jj000F
PQ07RX11
GL8ED48
GP1S525
PC8Q51
GP1A521
gp1sq59c
GP2S27C
GP2DM03
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D141
Abstract: LZOP3816 LZP3816
Text: SHARP 1SPECNo. 1 E L 1 1 X 0 7 5 ISSUE: Oct. 14 1999 11 PRELIMINARY1 SPECIFICATIONS Product Type : l/$-type Model No. lens-integrated CMOSColor Area Sensor for VGA LZOP3816 %This specifications containsapages including the cover. If you have any objections,please
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LZOP3816
LC-HS3816A
D141
LZOP3816
LZP3816
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Untitled
Abstract: No abstract text available
Text: MINIATURE 12-TURN, SEALED TR IM M IN G POTENTIOMETERS 1 /4 " S q u a re POT3107 FEATURES e • Miniature size— .250" x .250" x .169 ■ 12-Turn ■ Sealed to MIL-R-22097 Standards. Will withstand industrial cleaning processes. ■ Cermet Resistance Element
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12-TURN,
POT3107
12-Turn
MIL-R-22097
POT3107W
POT3107P
POT3107X
P0T3107X-1-
POT3107W
3107P
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ANZAC MDC-170
Abstract: Anzac Adams-Russell AM-123 M-170 M-170C MDC-170 anzac mixer Adams-Russell mixer anzac t-1000
Text: M/A-COM I N C / ANZAC DXV 14E D • S b 4 a i 7 7 D003372 fl HIGH LEVEL DOUBLE-BALANCED? MICROWAVE M IX E R o.5-18.0 GHz^S B -D S -II 8 dB Typical Midband Conversion Loss 22 dB Typical Midband Third Order Intercept - P T 7 - Û ? Guaranteed Specifications*
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FP-10
ANZAC MDC-170
Anzac
Adams-Russell
AM-123
M-170
M-170C
MDC-170
anzac mixer
Adams-Russell mixer
anzac t-1000
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2sc2166
Abstract: 2SC2166 equivalent
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2166 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2166 is a silicon NPN epitaxial planar type transistor designed Dimensions i for RF power amplifiers in HF band mobile radio applications. 9.1 ± 0 .7 FEATURES
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2SC2166
2SC2166
2SC2166 equivalent
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Untitled
Abstract: No abstract text available
Text: METRIC DO NOT SCALE DIMENSIONI IN DIMENSIONS IN mm PROIEZIONE EUROPEA (EUROPEAN PROJECTION) NOT£ : C o n ta tto : ¿£óa d i pam s , m /c h e ia m x,Aà*ATó/óTA6MATqB lOCCH£7TÙ : # £$W A P 0 //£ S 7 £ M C A R /C A T D V£TRO , ¿/.L.94 V*0:*,COiDR£ MERO .r . . . .
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23/S2&
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2220G8C
Abstract: No abstract text available
Text: TRww TMC2220/TMC2221 CMOS Programmable Digital Output Correlators 4 x 3 2 Bit, 20MHz 1 x 128 Bit, 20MHz The TM C 2220 20M H z, TTL com patible CMOS is composed of four separate 1 x 32 correlator The correlation scores of the four modules are com bined and output on tw o separate parallel,
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TMC2220/TMC2221
20MHz
2220G8C
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Untitled
Abstract: No abstract text available
Text: LOGIC tlE ]> t,S01122 0075^10 ÛG4 Not Intended For New Designs MÆ Semiconductor 252 N a tio n a l T-H3-2. 2 100117 Triple 2-Wide OA/OAI Gate General Description The 100117 is a monolithic triple 2-wide OR/AND gate with true and complement outputs. All inputs have 50 k il pull
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24-Pin
TL/F/9843-3
TL/F/9843-6
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2SA675
Abstract: t430 transistor t430 T591 PA33 ss-3r
Text: SEC j Iïf/\f7 J '> y = ]> h Silicon Transistor 2SA675 P N P X f c f v T J U J K v U =i > h -7 > v * £ Si PNP Silicon Epitaxial Transistor Fluorescent Indicator Pannel Driver 2 SA 675 i, tîIIÊ fli: £ f i f z sE — Jl' F h ? ^121/PACKAGE DIMENSIONS T% Ë E ^ 'iS î ^ £
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2SA675
2SA675
t430 transistor
t430
T591
PA33
ss-3r
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anzac mixers
Abstract: MCL TFM-2 "RF Mixers" ANZAC anzac md-108 anzac MD-109 Anzac relay md 5-t Anzac MD-141 Anzac T-1000 pin configuration for FP 1016
Text: M/ A - C OM INC/ ANZAC DIV 14 E D S b 42177 0003325 4 D O U BLÉ BALAN CED M I X E R ^ ^ C : lìVlÒDEÈ MD-40Ö’ LO Power +7 dBm 4-Pin Half Relay Header MCL Model TFM-2 Replacement Guaranteed Specifications* From -5 5 °C to +85°C _ Frequency Range
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D-400*
Sb42177
DC-1000
anzac mixers
MCL TFM-2
"RF Mixers" ANZAC
anzac md-108
anzac MD-109
Anzac
relay md 5-t
Anzac MD-141
Anzac T-1000
pin configuration for FP 1016
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M7461
Abstract: No abstract text available
Text: PD-9.1267F International IO R Rectifier IRF7504 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual P-Channel MOSFET • Very Small SOIC Package • Low Profile <1.1 mm • Available in Tape & Reel • Fast Switching
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1267F
IRF7504
footIA-481
EiA-541
M7461
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IH33
Abstract: LIMING relay ECG978 relay by liming YBS3 LIMING VOLTAGE RELAY APPLICATIONS OF astable multivibrator
Text: I PH ILIPS E C G I NC 17E D • bbSBTEö ECG978 DUAL TIMING CIRCUIT Sem iconductors 14 13 12 I I FEATURES: • TIM IN G FROM M IC R O SEC O N D S THROUGH HOURS • OPERATES IN BOTH ASTABLE A N D M O N O STABLE M OOES • ADJUSTABLE DUTY C Y C L E • H IGH CURRENT OUTPUT C A N SOURCE OR
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ECG978
ECG978
22-SECOND
IH33
LIMING relay
relay by liming
YBS3
LIMING VOLTAGE RELAY
APPLICATIONS OF astable multivibrator
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Untitled
Abstract: No abstract text available
Text: y PLDC20G10B/PLDC20G10 CYPRESS Features • Fast — Commercial: tpo = 15 ns, tco — 10 ns, ts = 12 ns — Military: tpo = 20 ns, tco = 15 ns, ts = 15 ns • Low power — Ice max.: 70 mA, commercial — Ice max.: 100 mA, military • Commercial and military temperature
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PLDC20G10B/PLDC20G10
24-Pin
PLDC20G10
24-Lead
300-Mil)
001bS3fl
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2T326
Abstract: n61j carel
Text: CD4527B Types b CMOS BCD Rate Multiplier • OascadaMe in multiples of 4-bits High-Voltage Types 20-Volt Rating ■ 100% test for quiescent current at 20 V ■ 5-V, 10-V, and 15-V parametric ratings Features: ■ Set to “ 9 " input and “ 9 " detect output
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CD4527B
20-Volt
-CD4527B
4527B
2T326
n61j
carel
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Untitled
Abstract: No abstract text available
Text: Commercial/ Industrial INC. PEEL 18CV8 -5/-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features • - ■ Architectural Flexibility Multiple Speed Power, Temperature Options - Enhanced architecture fits in m ore logic - 74 product te rm s x 36 input AN D array
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18CV8
20-Pin
0001fl3fl
407D7
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cst 5100 circuit diagram
Abstract: cx 3120
Text: TOKO Inc TK716xx Production Standard Note 1 . Description S tructure/F eature 2. 3. 4. 5. Electrical C haracteristics Specification Pin layout Test Circuit Block Diagram 6 . Definition of Terms 7 . In p u t O utput Capacitor 8 . Package Power Dissipation
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TK716xx
0B4-L004
cst 5100 circuit diagram
cx 3120
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Untitled
Abstract: No abstract text available
Text: Commercial INC. PEEL 18CV8Z-25 CMOS Programmable Electrically Erasable Logic Device Features • ■ Ultra Low Power Operation Architectural Flexibility - V cc = 5 Volts ±10% - Icc = 10 |iA typical at standby - Icc = 2 mA (typical) at 1 MHz - CMOS Electrically Erasable Technology
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18CV8Z-25
20-Pin
0001fl3fl
407D7
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RT22A
Abstract: Siemens RT22A REYROLLE 2C21 ddgt RQ4 aeg 2c21* RELAY asea transformer 2C21 westinghouse transformer westinghouse relay
Text: A SE A INFORMATION RK 60-401 E C om parison betw een th e ASEA tra n s fo r m e r d iffe re n tia l p ro te c tio n type RYDSA 20 and co rresp o n d in g p ro te c tio n s of o th e r m akes CONFIDENTIAL GENERAL O utstanding fe a tu re s of RYDSA 20 C la ssific a tio n of th e p ro tectio n s
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2n491a
Abstract: Helipot 2N469A 2N489A 2N490A MXL-STD-750 2N2417A 2N2418A 2N2422A 2N494A
Text: MUrS~19500/75B 18 October 1986 SUPERSEDING n / rrra _ t a r nnM * w w w \ j f ««#4 25 October 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTORS, PN, SILICON UNIJUNCTION TYPES 2N489A THROUGH 2N494A. TX2N489A THROUGH TX2N404A. 2N2417A THROUGH 2N2422A, AND TX2N2417A THROUGH TX2N2422A
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MH/-S-19500/75B
2N489A
2N494A.
TX2N489A
TX2N494A.
2N2417A
2N2422A,
TX2N2417A
TX2N2422A
2n491a
Helipot
2N469A
2N490A
MXL-STD-750
2N2418A
2N2422A
2N494A
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cd 1691 cp
Abstract: cp 8888 sj 6344 cP8888 nt 9989 1691 AI bt 67600
Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|Z = 11 dB @ 1 V, 5 mA, 2 GHz
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NE686
OT-143)
NE68618-T1
NE68619-T1
NE68630-T1
NE68633-T1
NE68639-T1
cd 1691 cp
cp 8888
sj 6344
cP8888
nt 9989
1691 AI
bt 67600
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neU jj8
Abstract: d063
Text: s z JO I. 0 ß E d ¿6/1- pssE9|ay 0 0 “ H 7'9 t " t ' l - V 3 •;u 0 ujnoop sin; jo pu 0 04 ; ;e suoisjAOjd 04 ; o; p o fq n s j 0 i|ijn|. s| 0 sn 'P0AJ0S0J s ; l|6 m uv uoji-EJodjOQ [/MGI 0SS8H0S 891 PS Q SZY YP u n u in n n n iiiiiiiiiiiiiiiiiiiiiiiiiiiij
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DME3256-000
Abstract: DMF6554-000 DMB2855-000 DMJ3102-000 132-042 DMJ4317-000 DMJ3086-000 DMJ3086 DME3014-000 silicon di for microwave diode mixer
Text: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes ALPHA IND/ S E M I C O N D U C T O R _ 4ÛE D • 0 S Ô S 4 4 3 0 0 0 1 1 Q S ¿145 ■ ALP ék . Features '^ k \ / T *07*07 ^ / ■ Ideal for MIC ■ Low 1/f Noise Low Intermodulation Distortion Low Turn On
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DMB2853-000
DMB2854-000
DMB2855-000
DMB2856-000
DMB6780-000
DMB6782-000
DMB3000-000
DMB3001-000
DMB6781-000
DMB3003-000
DME3256-000
DMF6554-000
DMJ3102-000
132-042
DMJ4317-000
DMJ3086-000
DMJ3086
DME3014-000
silicon di for microwave diode mixer
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