Untitled
Abstract: No abstract text available
Text: Commercial INC. PEEL 18CV8Z-25 CMOS Programmable Electrically Erasable Logic Device Features • ■ Ultra Low Power Operation Architectural Flexibility - V cc = 5 Volts ±10% - Icc = 10 |iA typical at standby - Icc = 2 mA (typical) at 1 MHz - CMOS Electrically Erasable Technology
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18CV8Z-25
20-Pin
0001fl3fl
407D7
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tin 612, 12 volt regulator
Abstract: No abstract text available
Text: VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet ATM/SONET/SDH 155/622 Mb/s Transceiver Mux/Dmux with Integrated Clock Generation VSC8110 Features • Operates at either STS-3/STM-1 155.52 Mb/s or STS-12/STM-4 (622.08 Mb/s) data rates • Integrated PLL for clock generation - No
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VSC8110
STS-12/STM-4
1SD2331
G51011
tin 612, 12 volt regulator
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Untitled
Abstract: No abstract text available
Text: ^EDI _ ELECTRO NIC DESIGNS IN C EDI7F32128C High Performance Four Megabit Flash EEPROM 128Kx32 CMOS Flash EEPROM Module r a iy ia iM ï Features The EDI7F32128C is a 5V-0nly In-System Programmable 128Kx32 bit C M O S Flash and Erasable Read Only Memory Module. Organized as
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EDI7F32128C
128Kx32
EDI7F32128C
150ns
128Kx8
OIAia0020821
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Untitled
Abstract: No abstract text available
Text: Commercial/ Industrial INC. PEEL 18CV8 -5/-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features • - ■ Architectural Flexibility Multiple Speed Power, Temperature Options - Enhanced architecture fits in m ore logic - 74 product te rm s x 36 input AN D array
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18CV8
20-Pin
0001fl3fl
407D7
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25PD5
Abstract: pc627
Text: QS3B441, QS3B481 ADVANCE INFORMATION High-Speed CMOS CrossbarSwitch Clocked 4 Port x 4, 4 Port x 8 Q QS3B441 QS3B481 FEATURES/BENEFITS • • • • • Bi-directional analog or digital switching 4 ports of 4 bits 3B441 4 ports of 8 bits (3B481) Decoded and registered control signals
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QS3B441,
QS3B481
QS3B441
QS3B481
3B441)
3B481)
24-pin
40-pin
3B441
25PD5
pc627
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