Photo Relays
Abstract: OCS37 OLD122 OCS32 OLD222 OC40 ocm220
Text: I PRODUCT LINE OLD122 LIGHT EMITTING DIODES OLD123 OLD124 OLD125 OLD127 OLD222 OLD222H OLD223 OLD224 OLD225 OLD232 OLD232-2 - OLD234 OLD2202 OLD22Û3 4 •P R O D U C T L IN E« PHOTO SENSORS Silicon PIN Photodiodes for Optical Communications " OD43L
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OLD122
OLD123
OLD124
OLD125
OLD127
OLD222
OLD222H
OLD223
OLD224
OLD225
Photo Relays
OCS37
OCS32
OC40
ocm220
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OLD2202
Abstract: 1000 nm light emitting diode 910nm 5424D
Text: O K I electronic components OLP22Q2 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION OLD2202 is a superhigh-output GaAIAs infrared light emission diode sealed with an achromatic transparent epoxy resin. Its light emission wave peaks at 910 nm. The OLD2202 can be the most
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OLP22Q2
TheOLD2202
OLD2202
L7542M0
OLD22Q2
b7E424D
Ifm/100
b7S4S40
1000 nm light emitting diode
910nm
5424D
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Untitled
Abstract: No abstract text available
Text: O K I electronic components QLD2202 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION TheC>LD2202 is a superhigh-output GaAIAs infrared light emission diode sealed with an achromatic transparent epoxy resin. Its light emission wave peaks at 910 nm. The OLD2202 can be the most
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QLD2202
LD2202
OLD2202
L72424Ã
b724240
L724240
OLD22Q2
b754240
OLD2202
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Untitled
Abstract: No abstract text available
Text: O K I electronic components OLD22Q2_ GaAIAs Infrared Light-Emitting Diode_ GENERAL DESCRIPTION The OLD2202 is a superhigh-output GaAIAs on GaAs infrared light emission diode sealed with an achromatic transparent epoxy. Its light emission wave is peaks at 940 nm. Because
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OLD22Q2_
OLD2202
100mA
100mA
LD22O20
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od43l
Abstract: OLD222 OCS32 LED 850nm TO-18 ocm220
Text: Tstg : -5 5 ~ +125°C Metal can Topr :-4 0 - +125°C (Metal can) 1FM'’ (tw =100jis) 1FH'Z (tw -2 0 0 ms) 1fm':! (tw -150ns) -3 0 ~+100°C (Others) -3 0 ~ +100°C (Others) (T-10m s) Absolute Maximum Ratings (Tas25°C) R a d ia tio n Color Package P Vr IF
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100jis)
-150ns)
Tas25
T-10m
T-40m
T-50m
od43l
OLD222
OCS32
LED 850nm TO-18
ocm220
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TA 8202 K
Abstract: 1000 nm light emitting diode OLD2202
Text: H2P0024-27-32 O K I electronic components OLD22Q2 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD22Q2 is a very high-output GaAIAs infrared light emitting diode sealed with an achromatic transparent epoxy resin. Its light emission w avelength peaks at 910 nm. The OLD22G2 can be the
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H2P0024-27-32
OLD22Q2
OLD22Q2
OLD22G2
Ifrm/100
TA 8202 K
1000 nm light emitting diode
OLD2202
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IR LED and photodiode pair long distance
Abstract: No abstract text available
Text: ]-:2RXHP-27-34 LIGHT EMITTING DIODES PRODUCT OVERVIEW 1. FEATURES AND FIELDS OF APPLICATION 1-1 Features of Light Emitting Diodes Since light emitting diodes are photo semiconductor devices, they have the following features. 1 (2) (3) (4) (5) (6) Long life; vibration and shock proof
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2RXHP-27-34
IR LED and photodiode pair long distance
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