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    OF TRANSISTORS ACCORDING TO Search Results

    OF TRANSISTORS ACCORDING TO Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    OF TRANSISTORS ACCORDING TO Price and Stock

    Phoenix Contact MACX MCR-EX-SL-NAM-NAM-SP

    Ex i NAMUR signal conditioners. For operating Ex i proximity sensors and switches in hazardous areas. Passive transistor output (resistive according to EN 60947-5-6) - line fault transparency - up to SIL 2 according to IEC 61508; Push-in connection
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MACX MCR-EX-SL-NAM-NAM-SP
    • 1 $261.68
    • 10 $243.09
    • 100 $237.07
    • 1000 $237.07
    • 10000 $237.07
    		Buy Now

    Phoenix Contact 2924883

    Ex i NAMUR signal conditioners. For operating Ex i proximity sensors and switches in hazardous areas. Passive transistor output (resistive according to EN 60947-5-6) - line fault transparency - up to SIL 2 according to IEC 61508; Push-in connection
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2924883
    • 1 $261.68
    • 10 $243.09
    • 100 $237.07
    • 1000 $237.07
    • 10000 $237.07
    		Buy Now

    Phoenix Contact MACX MCR-EX-SL-NAM-NAM

    Ex i NAMUR signal conditioner. For operating Ex i proximity sensors and switches in the Ex area. Passive transistor output (resistive according to EN 60947-5-6) - line fault transparency - up to SIL 2 according to IEC 61508; screw connection.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MACX MCR-EX-SL-NAM-NAM
    • 1 $261.68
    • 10 $243.09
    • 100 $237.07
    • 1000 $237.07
    • 10000 $237.07
    		Buy Now

    Phoenix Contact 2866006

    Ex i NAMUR signal conditioner. For operating Ex i proximity sensors and switches in the Ex area. Passive transistor output (resistive according to EN 60947-5-6) - line fault transparency - up to SIL 2 according to IEC 61508; screw connection.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2866006
    • 1 $261.68
    • 10 $243.09
    • 100 $237.07
    • 1000 $237.07
    • 10000 $237.07
    		Buy Now

    Phoenix Contact 2905724

    Ex i NAMUR signal conditioners. For operating Ex i proximity sensors and switches in hazardous areas. Passive transistor output (resistive - Yokogawa-compatible) - line fault transparency - up to SIL 2 according to IEC 61508; Push-in connection
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2905724
    • 1 $215.71
    • 10 $200.83
    • 100 $195.42
    • 1000 $195.42
    • 10000 $195.42
    		Buy Now
    Find more OF TRANSISTORS ACCORDING TO price and stock on Findchips.com

    OF TRANSISTORS ACCORDING TO Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SD1528-06

    Abstract: MSC81600M MSC1000M MSC1000MP MSC1004M MSC1004MP MSC81035M MSC81035MP SD1528-08 SD1530-01
    Text: SILICON POWER TRANSISTORS AVIONICS TRANSISTORS SGS-THOMSON offers the broadest variety of product in the industry specifically characterized for avionics applications. Devices are grouped according to frequency range of application and are available in several package


    Original     		PDF MSC1000M MSC1000MP MSC1004M MSC1004M( AM80912-005 AM80912-015 AM80912-030 AM80912-085 AM0912-150 SD1528-06 MSC81600M MSC1000M MSC1000MP MSC1004M MSC1004MP MSC81035M MSC81035MP SD1528-08 SD1530-01

    HALL EFFECT 21E

    Abstract: thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG
    Text: RF Transistors Data Book 1997 Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B Material


    Original     		PDF 26-Feb-97 HALL EFFECT 21E thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG

    2SC2786

    Abstract: No abstract text available
    Text: ST 2SC2786 NPN Silicon Epitaxial Planar Transistor for FM RF amplifier and local oscillator of FM tuner. The transistor is subdivided into three groups M, L, and K, according to its DC current gain. On special request, these transistors manufactured in different pin configurations.


    Original     		PDF 2SC2786 100MHz 2SC2786

    2SC2786

    Abstract: No abstract text available
    Text: ST 2SC2786 NPN Silicon Epitaxial Planar Transistor for FM RF amplifier and local oscillator of FM tuner. The transistor is subdivided into three groups M, L, and K, according to its DC current gain. On special request, these transistors manufactured in different pin configurations.


    Original     		PDF 2SC2786 100MHz 2SC2786

    2SC2786

    Abstract: 107MHZ hFE-200 to-92 npn
    Text: ST 2SC2786 NPN Silicon Epitaxial Planar Transistor for FM RF amplifier and local oscillator of FM tuner. The transistor is subdivided into three groups M, L, and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2786 100MHz 2SC2786 107MHZ hFE-200 to-92 npn

    2SD882S

    Abstract: No abstract text available
    Text: ST 2SD882S-Q/P/E NPN Silicon Epitaxial Planar Transistor for the output stage of 0.75W audio, voltage regulator, and relay driver. The transistor is subdivided into three groups Q, P and E, according to its DC current gain. On special request, these transistors can be


    Original     		PDF 2SD882S-Q/P/E 200mA 100MHz 2SD882S

    Untitled

    Abstract: No abstract text available
    Text: ST 2SD882S-Q/P/E NPN Silicon Epitaxial Planar Transistor for the output stage of 0.75W audio, voltage regulator, and relay driver. The transistor is subdivided into three groups Q, P and E, according to its DC current gain. On special request, these transistors can be


    Original     		PDF 2SD882S-Q/P/E 200mA 100MHz

    2SD882S-Q

    Abstract: No abstract text available
    Text: ST 2SD882S-Q/P/E NPN Silicon Epitaxial Planar Transistor for the output stage of 0.75W audio, voltage regulator, and relay driver. The transistor is subdivided into three groups Q, P and E, according to its DC current gain. On special request, these transistors can be


    Original     		PDF 2SD882S-Q/P/E 200mA 100MHz 2SD882S-Q

    2SB564

    Abstract: 2SB564, transistor
    Text: ST 2SB564 PNP Silicon Epitaxial Planar Transistor for use in driver and output stages of audio frequency amplifiers. The transistor is subdivided into three groups M, L and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SB564 2SB564 2SB564, transistor

    transistor c 9018

    Abstract: transistor 9018 NPN NPN Silicon Epitaxial Planar Transistor 9018 9018 transistor NPN 9018 transistor transistor 9018
    Text: ST 9018 NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be


    Original     		PDF

    2SB564

    Abstract: 2SB564, transistor
    Text: ST 2SB564 PNP Silicon Epitaxial Planar Transistor for use in driver and output stages of audio frequency amplifiers. The transistor is subdivided into three groups M, L and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SB564 2SB564 2SB564, transistor

    2SC2786

    Abstract: No abstract text available
    Text: ST 2SC2786 NPN Silicon Epitaxial Planar Transistor for FM RF amplifier and local oscillator of FM tuner. The transistor is subdivided into three groups M, L, and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2786 100MHz 2SC2786

    2SB564

    Abstract: No abstract text available
    Text: ST 2SB564 PNP Silicon Epitaxial Planar Transistor for use in driver and output stages of audio frequency amplifiers. The transistor is subdivided into three groups M, L and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SB564 2SB564

    2SC2002

    Abstract: 2SC2002 equivalent NPN Transistor TO92 300ma
    Text: ST 2SC2002 NPN Silicon Epitaxial Planar Transistor for use in driver stage of high voltage audio equipments. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2002 300mA 300mA, -10mA 2SC2002 2SC2002 equivalent NPN Transistor TO92 300ma

    2SB564

    Abstract: No abstract text available
    Text: ST 2SB564 PNP Silicon Epitaxial Planar Transistor for use in driver and output stages of audio frequency amplifiers. The transistor is subdivided into three groups M, L and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SB564 2SB564

    2SD882S-Q

    Abstract: transistor base collector current 200mA
    Text: ST 2SD882S-Q/P/E NPN Silicon Epitaxial Planar Transistor for the output stage of 0.75W audio, voltage regulator, and relay driver. The transistor is subdivided into three groups Q, P and E, according to its DC current gain. On special request, these transistors can be


    Original     		PDF 2SD882S-Q/P/E 200mA 100MHz 2SD882S-Q transistor base collector current 200mA

    2SC2002

    Abstract: NPN Transistor TO92 300ma 2SC200 transistor 2sc2002 2SC2002 L 2SC-2002
    Text: ST 2SC2002 NPN Silicon Epitaxial Planar Transistor for use in driver stage of high voltage audio equipments. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2002 300mA 300mA, -10mA 2SC2002 NPN Transistor TO92 300ma 2SC200 transistor 2sc2002 2SC2002 L 2SC-2002

    2SC2002

    Abstract: NPN Transistor TO92 300ma 2SC-2002 transistor 2sc2002 hFE-200 to-92 npn
    Text: ST 2SC2002 NPN Silicon Epitaxial Planar Transistor for use in driver stage of high voltage audio equipments. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2002 300mA 300mA, -10mA 2SC2002 NPN Transistor TO92 300ma 2SC-2002 transistor 2sc2002 hFE-200 to-92 npn

    2SD1616

    Abstract: 2sd1616 datasheet 2sd1616a
    Text: ST 2SD1616 / 2SD1616A NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be


    Original     		PDF 2SD1616 2SD1616A 2SD1616A 2SD1616 100mA 0V/120V 2sd1616 datasheet

    2SD1616

    Abstract: 2SD1616A
    Text: ST 2SD1616 / 2SD1616A NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be


    Original     		PDF 2SD1616 2SD1616A 2SD1616A 2SD1616 100mA 0V/120V

    2SD1616

    Abstract: 2SD1616A
    Text: ST 2SD1616 / 2SD1616A NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be


    Original     		PDF 2SD1616 2SD1616A 2SD1616A 2SD1616 0V/120V -100mA

    BFQ67W

    Abstract: PMBT3640 PMBTH10 BFM520
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Wideband Transistors 1997 Nov 24 File under Discrete Semiconductors, SC14 Philips Semiconductors RF Wideband Transistors Selection guide FIRST GENERATION NPN WIDEBAND TRANSISTORS fT up to 3.5 GHz PACKAGE


    Original     		PDF OT143 OT223 OT323 BFT25 BF747 BF547 BF547W BFS17 BFS17W BF689K BFQ67W PMBT3640 PMBTH10 BFM520

    2sc536

    Abstract: sanyo 2033 sanyo 2sc536 2SC536 transistor 2SC536K 3 JM 2sC536 sanyo 2SC536SPA 2005A 2SC3330
    Text: SANYO SEMCONtUCTOR CORP 32E 1 EB 7n707h 0001213 :T T H -z -? -/7 N P N Epitaxial Planar Silicon Transistors Small Signal General-Purpose Amp Applications ^ -Features . The 2SC536 is classified into 2 types of SPA, NP according to the case outline.


    OCR Scan     		PDF 7cici707b D333J 2SC536 T-91-20 SC-43 sanyo 2033 sanyo 2sc536 2SC536 transistor 2SC536K 3 JM 2sC536 sanyo 2SC536SPA 2005A 2SC3330

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan     		PDF 2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C