OF TRANSISTOR 2N5307 Search Results

OF TRANSISTOR 2N5307 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

OF TRANSISTOR 2N5307 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor 2N5952 Abstract: transistor KSP44 bc558 zener diode reference guide 1n967b schottky 1n5248 KBL BRIDGE RECTIFIER 005 FYPF2004DN BAV99Wt1g BC337 Text: Small Signal Transistors & Diodes Selection Guide Fairchild Semiconductor, a long-time, leading global supplier of high performance semiconductors, offers a broad range of small signal transistor and diode products—from JFETs, Schottky, and rectifiers, to RF transistors, TRIACs and more. You will not only find the performance that you want, you will also	Original	PDF
2N5307 Abstract: CBVK741B019 F63TNR MPSA14 PN2222N Text: 2N5307 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	PDF	2N5307 MPSA14 2N5307 CBVK741B019 F63TNR PN2222N
2n5307 Abstract: MPSA14 OF transistor 2n5307 Text: 2N5307 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	PDF	2N5307 MPSA14 2n5307 OF transistor 2n5307
NPN Transistor TO92 40V 200mA Abstract: 2n5307 MPSA14 Text: 2N5307 2N5307 NPN General Purpose Amplifier • This device designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from Process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor	Original	PDF	2N5307 MPSA14 NPN Transistor TO92 40V 200mA 2n5307
Untitled Abstract: No abstract text available Text: 2N5307 2N5307 NPN General Purpose Amplifier • This device designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from Process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor	Original	PDF	2N5307 MPSA14
ss8050 d 331 Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34 Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2	Original	PDF	F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	PDF	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
TO-98 Abstract: transistor MPSA06 NPN Transistor TO92 2N3391A 2N3904 TO-92 type transistor 2n3903 2N2924 ges3 2N2926-5 2N3390 Text: - THOriSON/ DISTRIBUTOR SñE D m T05t,ñ?3 0005737 • TCSK Discrete Transistors Small-Signal Bipolar Transistors In O rder of Ascending I q NPN Signal Transistor Selector Guide NPN Signal Transistor Selector Guide (M ax.) In A v (BR)CEO (M in.)	OCR Scan	PDF	1CJ5bfl73 2N3390 2N2923 2N2924 2N2925 2N2926 2N2926-5 2N3391 2N3391A 2N3392 TO-98 transistor MPSA06 NPN Transistor TO92 2N3904 TO-92 type transistor 2n3903 ges3
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
1N6227 Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR • 2N5307 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings TA = 25°C unless otherwise noted	OCR Scan	PDF	2N5307 MPSA14
2N5307 Abstract: MPSA14 Text: S S E f v l l G O f s l O L J C î T Q R ;:m 2N5307 NPN Darlington Transistor This device is designed for applications requiring extrem ely high cu rre n t gain at currents to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. Absolute Màximum RStinQS	OCR Scan	PDF	2N5307 MPSA14 2N5307
beta transistor 2N2222 Abstract: 1N4532 1n9148 2N2926 equivalent 2n RF transistor 2N5249 2N6006 DIODE 1N3605 2N4424 equivalent 2N6002 Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 GET3S3B GET3638A 2NSOOO 2N6001 2N6003 2N6000 2N6002 2N60D2 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003	OCR Scan	PDF	50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 beta transistor 2N2222 1N4532 1n9148 2N2926 equivalent 2n RF transistor 2N5249 2N6006 DIODE 1N3605 2N4424 equivalent 2N6002

d33025 Abstract: 2N3392 complementary 2N3856 2n3860 transistor COMPLEMENTARY PNP-NPN TRANSISTORS 2N5355 2N6000 2N3856A 2N4424 2n2926 transistor Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cEO '~'\„^ I Voltage 50/iA to NPN 5mA to 5mA ra p to 20 to 2N6000 2N60Q2 2N6001 2N6S03 2N6000 2N6002 N PN PN P 2NB001 2N W Q 3 2N6000 2N6002 2N6001 2N6003 pnp : G ET3 0 14 GET3S3B GET36 38A GET3638	OCR Scan	PDF	50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 d33025 2N3392 complementary 2N3856 2n3860 transistor COMPLEMENTARY PNP-NPN TRANSISTORS 2N5355 2N6000 2N3856A 2N4424 2n2926 transistor
NPN Transistor TO92 5V 200mA Abstract: 2N3877A GES5307 GES6220 D38L1-3 GES5305 GES5306 GES5306A GES5308 GES5308A Text: SILICON SIGNAL DARLINGTON TRANSISTORS TO-92 PACKAGE Device Type bv ceo V Min.-Max. GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 NPN NPN NPN NPN NPN NPN NPN PNP PNP 25 25 25 40 40 40 40 40 25 2K-20K /K-70K 7K-70K. 2K-20K 7K-70K	OCR Scan	PDF	GES5305 2K-20K 200mA, 200MA GES5306 /K-70K GES5306A 7K-70K. NPN Transistor TO92 5V 200mA 2N3877A GES5307 GES6220 D38L1-3 GES5308 GES5308A
SN72710L Abstract: MC1013P MC680P 796HC mc1235l MC838P MC814G MC1670L 723HC 741hm Text: 27-18 LH 0002 C LH 0002 CN 586-81! .587-270 AMPEX CURRENT A M PLIFIE R IN PUT 27-18 AMPEX REV 111 NH 0005C 586-495 D AC08CZ 587-896 27 + R ef \| 1_ O PE R ATIO N AL A M PLIFIE R 8 BIT D -A CONVERTER 2" 14 13 12 11 6 5 4 1I i i i i i 3 1 13 , +12V So-4	OCR Scan	PDF	LH0002C LH0002CN NH0005C DAC08CZ NH0014C DH0034 78M12HC MMH0026CG 79M12AHC 75460BP SN72710L MC1013P MC680P 796HC mc1235l MC838P MC814G MC1670L 723HC 741hm
2N2219 transistor substitute Abstract: 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007 Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A	OCR Scan	PDF	50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2219 transistor substitute 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007
2NS35 Abstract: D33025 TRANSISTOR 2n3901 pnp beta 250 ft 150 2N60C 2N38S 2N601 transistor 2n3391 2N6000 GET3014 Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 GET3S3B GET3638A 2NSOOO 2N6001 2N6003 2N6000 2N6002 2N60D2 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003	OCR Scan	PDF	50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2NS35 D33025 TRANSISTOR 2n3901 pnp beta 250 ft 150 2N60C 2N38S 2N601 transistor 2n3391 2N6000 GET3014
transistor pnp-npn Abstract: 2N6006 2N6000 2N6002 GET3013 GET3014 GET3638 GET3646 GET706 GET708 Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA rap GET706 GET708 to GET914 G ET3013 G ET3646 HPH : 2N6000 2N60Q2 2N6001 2N6S03 75m A 75m A t] 800m A PNP NPN pn p GET3014 GET3S3B GET3638A G ET3638	OCR Scan	PDF	50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 transistor pnp-npn 2N6006 2N6000 2N6002 GET3014 GET3638
2N2926 equivalent Abstract: beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A	OCR Scan	PDF	50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2926 equivalent beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent
IC 4098 Abstract: 2N5355 HS5306 2N5354 2N5356 2N5418 2N5419 2N5420 D29E1 D29E2 Text: SILICON SIGNAL SWITCHING & AMPLIFIER COMPLEMENTARY PNP-NPN PAIRS Type NPN PNP 2N5354 V c E fSATJ lllFE V Pt < 2 5 °C ~(mW) (mA) Min. M ax. @ 50mA, 2.5m A M ax. (V) V cEO @ 1V, 50mA lc ’ Ccb @ 10V, 1MHz T yp ical (Pf) ft T yp ical (MHz) Package Outline No.	OCR Scan	PDF	2N5354 2N5418 2N5355 2N5419 2N5356 2N5420 500mA D33D26 D29E7 D33D27 IC 4098 2N5355 HS5306 2N5354 2N5356 D29E1 D29E2
JE1100 Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466 Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices	OCR Scan	PDF
2N3417 equivalent Abstract: 2N2221-2N2222 2N2222A npn transistor transistor 2n5174 IC TC 3588 beta transistor 2N2222 1n9148 2N4424 2N4424 equivalent 2N3416 equivalent Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA rap GET706 GET708 to GET914 GET3013 GET3646 HPH : 2N6000 2N60Q2 2N6001 2N6S03 75mA 75mA t] 800mA PNP NPN pnp GET3014 GET3S3B GET3638A GET3638 GET3638A	OCR Scan	PDF	50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N3417 equivalent 2N2221-2N2222 2N2222A npn transistor transistor 2n5174 IC TC 3588 beta transistor 2N2222 1n9148 2N4424 2N4424 equivalent 2N3416 equivalent

OF TRANSISTOR 2N5307 Search Results

OF TRANSISTOR 2N5307 Result Highlights (5)

OF TRANSISTOR 2N5307 Datasheets Context Search

transistor 2N5952

2N5307

2n5307

NPN Transistor TO92 40V 200mA

Untitled

ss8050 d 331

y51 h 120c

TO-98

IC HXJ 2038

LG color tv Circuit Diagram schematics

1N6227

Untitled

2N5307

beta transistor 2N2222

d33025

NPN Transistor TO92 5V 200mA

SN72710L

2N2219 transistor substitute

2NS35

transistor pnp-npn

2N2926 equivalent

IC 4098

JE1100

2N3417 equivalent