marking dp sot363
Abstract: BC237 transistor BF245 A marking A5 sot363 2N2222A plastic bc849 MMBD1010LT1 bf245 equivalent marking code a5 sot363
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
marking dp sot363
BC237
transistor BF245 A
marking A5 sot363
2N2222A plastic
bc849
bf245 equivalent
marking code a5 sot363
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2N301
Abstract: BC237 5111 sot-23 BC547 sot package sot-23 2N5670 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
2N301
BC237
5111 sot-23
BC547 sot package sot-23
2N5670 equivalent
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
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BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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BC237
Abstract: MPSA06 346
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
MPSA06 346
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BC237
Abstract: msc2295 MPS2369 equivalent BC547 sot package sot-23 MMBD1000
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
msc2295
MPS2369 equivalent
BC547 sot package sot-23
MMBD1000
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BC237
Abstract: SOT-223 number code book FREE
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MV7404T1 Silicon Hyper-Abrupt Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for high capacitance and a tuning ratio of greater than 10 times over a bias range of 2.0 to 10 volts. It provides tuning over a
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OT-223
solder218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
SOT-223 number code book FREE
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PIN Diode Basics
Abstract: PIN DIODE DRIVER CIRCUITS 2n2222 transistor pin b c e 2N2894A 2N2222 application note 2n2222 transistor datasheet depletion mode current limiter LATTICE 3000 SERIES Microwave PIN diode Switching diode 0.5
Text: APPLICATION NOTE PIN Diode Basics Introduction Basic Theory—Variable Resistance A PIN diode is essentially a variable resistor. To determine the value of this resistance, consider a volume comparable to a typical PIN diode chip, say 20 mil diameter and 2 mils thick. This chip has a
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PEAK DETECTOR
Abstract: 2N2222A/ZTX Silicon Detector Corporation ISL8116 simple PEAK DETECTOR PEAK DETECTOR application EL8202 germanium diode ZTX 15 2n2222a making
Text: Feedback Gives Peak Detector More Precision Application Note May 8, 2007 AN1309.0 Tamara A. Papalias and Mike Wong The standard method for measuring the peak of a signal involves the use of a diode. If the diode is used alone, the input voltage has to be significantly larger than the turn-on
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AN1309
200mV
700mV
1-888-INTERSIL
PEAK DETECTOR
2N2222A/ZTX
Silicon Detector Corporation
ISL8116
simple PEAK DETECTOR
PEAK DETECTOR application
EL8202
germanium diode
ZTX 15
2n2222a making
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2n3819 replacement
Abstract: 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV809LT1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Device
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MMBV809LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2n3819 replacement
2n3053 replacement
BC109C replacement
mps2907 replacement
bf245 replacement
BC237
BF245
bf258 replacement
J112 equivalent
2N4265
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2n3819 replacement
Abstract: BC237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV105GLT1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods.
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MMBV105GLT1
236AB)
EL218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
2n3819 replacement
BC237
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j305 replacement
Abstract: BC237 mps2907 replacement BC109C replacement
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 Silicon Tuning Diode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical
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MMBV3102LT1
236AB)
t218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
j305 replacement
BC237
mps2907 replacement
BC109C replacement
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1N5817
Abstract: 2N2222 2N6277 MBRP20060CT
Text: MBRP20060CT Preferred Device POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: http://onsemi.com • Dual Diode Construction —
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MBRP20060CT
r14525
MBRP20060CT/D
1N5817
2N2222
2N6277
MBRP20060CT
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Untitled
Abstract: No abstract text available
Text: MBRP20060CT Preferred Device POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: http://onsemi.com • Dual Diode Construction —
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MBRP20060CT
B20060T
150EAT
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Untitled
Abstract: No abstract text available
Text: MBR3045PT Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: • Dual Diode Construction — Terminals 1 and 3 may be Connected for
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MBR3045PT
2N2222
2N6277
1N5817
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B3045
Abstract: 2N6277
Text: MBR3045WT Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: • Dual Diode Construction — Terminals 1 and 3 may be Connected for
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MBR3045WT
O-247
2N2222
2N6277
1N5817
B3045
2N6277
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2N2222 circuit
Abstract: 2n2222 PIC12C671 2n2222 TRANSISTOR power transistor 2n2222 data sheet book TRANSISTOR 2N2222 Transistor 2N2222 OF transistor 2N2222 2N2222 transistor datasheet DATA SHEET OF transistor 2N2222
Text: SIMPLE CIRCUIT Using a PIC12C671 To Create a High Voltage, Low Current, Programmable Switch Power Supply Author: field through the diode into the 220 µF capacitor. The voltage across the capacitor is then sampled back to the A/D. Based on the feedback, the duty cycle of the
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PIC12C671
2N2222
2N2222.
PIC12C671
2N2222
DS40160A/MP
092-page
2N2222 circuit
2n2222 TRANSISTOR
power transistor 2n2222
data sheet book TRANSISTOR 2N2222
Transistor 2N2222
OF transistor 2N2222
2N2222 transistor datasheet
DATA SHEET OF transistor 2N2222
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Untitled
Abstract: No abstract text available
Text: Radiation Tolerant Bulkhead Optocoupler 66280 MICROPAC OPTOELECTRONIC PRODUCTS DIVISION PRELIMINARY 07/11/07 Features: Applications: • • • • • • • • • • High reliability Base lead provided for conventional transistor biasing 850 nm LED, silicon photodiode & 2N2222
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2N2222
850nm
prove10mA
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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HOA0901-11
Abstract: HOA0901-12 HOA0902-11 quadrature mouse phototransistor 2N2222 hfe ir slotted wheel encoder mouse joystick circuit how an INFRARED MOTION DETECTOR works shadow detector circuits HOA0901
Text: Application Notes Application Note Light Emitting Diode IRED Power Output Specifications A method of specifying power output is to measure the power radiated into a cone whose apex is at the IRED. This cone is the solid angle over which the power output
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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