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    OC 76 GERMANIUM TRANSISTOR Search Results

    OC 76 GERMANIUM TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    OC 76 GERMANIUM TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    START620

    Abstract: 60Ghz 60GHz transistor START620TR 500MHz-5GHz
    Text: START620 NPN SiGe RF Transistor PRELIMINARY DATA • LOW NOISE FIGURE: NFmin = 0.8dB @ 1.8GHz, 5mA, 2V • COMPRESSION P1dB = 13dBm @ 1.8GHz, 20mA, 2V • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 DESCRIPTION The START620 is a member of the START family


    Original     		PDF START620 13dBm OT343 OT343 START620 45GHz 60GHz. START620TR 500MHz-5GHzthis 60Ghz 60GHz transistor START620TR 500MHz-5GHz

    OC 76 germanium transistor

    Abstract: LNA transistor 1.8GHz
    Text: START620 NPN SiGe RF Transistor TARGET DATA • LOW NOISE FIGURE: NFmin = 0.8dB @ 1.8GHz, 5mA, 2V • COMPRESSION P1dB = 13dBm @ 1.8GHz, 20mA, 2V • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 DESCRIPTION The START620 is a member of the START family that provide market with the state of the art of RF silicon process. It uses ST’s Silicon Germanium technology. This technology offers ft’s of up to 45GHz


    Original     		PDF START620 13dBm OT343 OT343 START620TR START620 45GHz 60GHz. 500MHz-5GHz OC 76 germanium transistor LNA transistor 1.8GHz

    START620

    Abstract: 60Ghz 60GHz transistor START620TR
    Text: START620 NPN SiGe RF Transistor PRELIMINARY DATA • LOW NOISE FIGURE: NFmin = 0.8dB @ 1.8GHz, 5mA, 2V • COMPRESSION P1dB = 13dBm @ 1.8GHz, 20mA, 2V • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 DESCRIPTION The START620 is a member of the START family


    Original     		PDF START620 13dBm OT343 OT343 START620 45GHz 60GHz. START620TR 500MHz-5GHzthis 60Ghz 60GHz transistor START620TR

    OC 74 germanium transistor

    Abstract: 27s21 OC 76 germanium transistor
    Text: 5.0-20.0 GHz GaAs MMIC Low Noise Amplifier L1005-BD April 2007 - Rev 19-Apr-07 Features Wideband Low Noise Amplifier 13.0 dB Small Signal Gain 2.2 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010


    Original     		PDF 19-Apr-07 L1005-BD MIL-STD-883 XL1005-BD-000V XL1005-BD-000W XL1005-BD-EV1 XL1005 OC 74 germanium transistor 27s21 OC 76 germanium transistor

    pHEMT transistor MTBF

    Abstract: L1005 84-1LMI
    Text: 5.0-20.0 GHz GaAs MMIC Low Noise Amplifier L1005 May 2006 - Rev 10-May-06 Features Wideband Low Noise Amplifier 13.0 dB Small Signal Gain 2.2 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout


    Original     		PDF L1005 10-May-06 MIL-STD-883 pHEMT transistor MTBF L1005 84-1LMI

    DM6030HK

    Abstract: TS3332LD XL1005 XL1005-BD-000V XL1005-BD-000W XL1005-BD-EV1
    Text: 5.0-20.0 GHz GaAs MMIC Low Noise Amplifier L1005-BD April 2007 - Rev 19-Apr-07 Features Wideband Low Noise Amplifier 13.0 dB Small Signal Gain 2.2 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010


    Original     		PDF L1005-BD 19-Apr-07 MIL-STD-883 XL1005-BD-000V XL1005-BD-000W XL1005-BD-EV1 XL1005 DM6030HK TS3332LD XL1005-BD-000V XL1005-BD-000W XL1005-BD-EV1

    OC 74 germanium transistor

    Abstract: No abstract text available
    Text: 5.0-20.0 GHz GaAs MMIC Low Noise Amplifier L1005 September 2005 - Rev 01-Sep-05 Features Chip Device Layout Wideband Low Noise Amplifier 13.0 dB Small Signal Gain 2.2 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883


    Original     		PDF 01-Sep-05 L1005 MIL-STD-883 OC 74 germanium transistor

    OC 74 germanium transistor

    Abstract: P1020 15MPA0566 DM6030HK TS3332LD XP1020-BD XP1020-BD-000V power transistor gaas
    Text: 11.0-19.0 GHz GaAs MMIC Power Amplifier P1020-BD January 2007 - Rev 30-Jan-07 Features Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010


    Original     		PDF P1020-BD 30-Jan-07 MIL-STD-883 XP1020-BD XP1020-BD-000V XP1020-BD-EV1 XP1020-BD OC 74 germanium transistor P1020 15MPA0566 DM6030HK TS3332LD XP1020-BD-000V power transistor gaas

    Untitled

    Abstract: No abstract text available
    Text: 11.0-19.0 GHz GaAs MMIC Power Amplifier P1020-BD January 2007 - Rev 30-Jan-07 Features Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010


    Original     		PDF P1020-BD 30-Jan-07 MIL-STD-883 XP1020-BD XP1020-BD-000V XP1020-BD-EV1 XP1020-BD

    transistor C3866

    Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
    Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)


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    P1016

    Abstract: DM6030HK XP1016 XP1016-BD XP1016-BD-000V XP1016-BD-EV1 AuSn eutectic
    Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1016-BD February 2010 - Rev 15-Feb-10 Features Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010


    Original     		PDF P1016-BD 15-Feb-10 MIL-STD-883 XP1016-BD XP1016-BD-EV1 XP1016 P1016 DM6030HK XP1016-BD XP1016-BD-000V XP1016-BD-EV1 AuSn eutectic

    Untitled

    Abstract: No abstract text available
    Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1016-BD December 2009 - Rev 04-Dec-09 Features Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010


    Original     		PDF P1016-BD 04-Dec-09 MIL-STD-883 XP1016-BD-EV1 XP1016

    NKT275

    Abstract: OC75 OC81DN OC72 OC78 NKT213 germanium transistors PNP oc75 oc76 ACY35 nkt 275
    Text: PNP Germanium Transistors PNP Germanium A F Alloy Transistors in T 0 1 metal case Common Characteristics fr Vc£ Cob <VC B = 6 V , \E = 0 •6 V , lc = 1mA) 1 MHz Characteristics at T amb = 2 5 °C Maximum ratings Type Low Noise Types 40 pF B V C fO V B V CSO


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    kt420

    Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
    Text: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS


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    MP21E

    Abstract: sowjetische transistoren MP21D UdSSR KT904 ASZ16 KT315 OC1072 Transistoren DDR asz1015
    Text: electronic Sowjetische Transistoren I n h a l t s v e r z e i c h n i s V o rw o rt K u rz c h a ra lc te rls tlk - G e rm a n iu n tra n s is to re n - S illz lu m tra n s ito re n S t a a t l i c h e r S ta n d a r d d e s S y ste m s f ü r d i e B e z e ic h n u n g d e r H a l b l e i t e r b a u e l e u e n t e d e r UdSSR


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    2N5508

    Abstract: 2N1019 l53b 5 2N4241 BC138 2SJ11 Transistors 2n551 2N3523 2N550 2N551
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. 12X084B 12X165 VCEO-15V hFE-30 ICBO-200mA PA-300mW; VCEO-55V; hFE-100 Pt-25W; 2N5508 2N1019 l53b 5 2N4241 BC138 2SJ11 Transistors 2n551 2N3523 2N550 2N551

    SA2713

    Abstract: MA7809 MEM808 transistor k1502 RN1030A UC320 RN3020 L17D ML111B ML132A
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF NPN110. /AT-10uV/deg SA2720* SA2721 SA2722* SA2723* SA2724* /AT-10uV/dea SA2713 MA7809 MEM808 transistor k1502 RN1030A UC320 RN3020 L17D ML111B ML132A

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


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    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


    OCR Scan     		PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159

    BC138 TRANSISTOR

    Abstract: 2N4043 ME2001 2N1020 2N3523 2N4042 2N4241 BC138 bc143 TLO 61
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    BC138

    Abstract: 2N3520 ST8014 2CY38 BD117 OC74 2N3523 2N4241 BC138 TRANSISTOR BC222 TRANSISTOR
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF 12X084B 12X165 VCEO-15V hFE-30 ICBO-200mA PA-300mW; VCEO-55V; hFE-100 Pt-25W; VCB0-50V; BC138 2N3520 ST8014 2CY38 BD117 OC74 2N3523 2N4241 BC138 TRANSISTOR BC222 TRANSISTOR

    MP2060-4

    Abstract: MP2062-4 MP2063-4 L17D MA7809
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


    OCR Scan     		PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071