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    HCTS574DMSR

    Abstract: HCTS574HMSR HCTS574KMSR HCTS574MS
    Text: HCTS574MS August 1995 Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered Features • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg


    Original
    PDF HCTS574MS O11utputs -55oC 125oC HCTS574DMSR HCTS574HMSR HCTS574KMSR HCTS574MS

    HCTS574

    Abstract: HCTS574DMSR HCTS574HMSR HCTS574KMSR HCTS574MS
    Text: HCTS574MS August 1995 Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered Features • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg


    Original
    PDF HCTS574MS O11utputs -55oC 125oC HCTS574 HCTS574DMSR HCTS574HMSR HCTS574KMSR HCTS574MS

    HCTS574KMSR

    Abstract: D2416 HCTS574 HCTS574DMSR HCTS574HMSR HCTS574MS
    Text: HCTS574MS S E M I C O N D U C T O R August 1995 Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered Features • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD Si


    Original
    PDF HCTS574MS O11utputs -55oC 125oC 05A/cm2 HCTS574 TA14460A. HCTS574KMSR D2416 HCTS574DMSR HCTS574HMSR HCTS574MS

    HCTS574MS

    Abstract: HCTS574DMSR HCTS574HMSR HCTS574KMSR
    Text: HCTS574MS August 1995 Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered Features • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg


    Original
    PDF HCTS574MS O11utputs -55oC 125oC HCTS574MS HCTS574DMSR HCTS574HMSR HCTS574KMSR