p1248
Abstract: C11531E NX5302SH NX5302SJ STM-16
Text: PRELIMINARY DATA SHEET LASER DIODE NX5302SJ,NX5302SH 1 310 nm FIBER OPTIC COMMUNICATIONS InGaAsP MQW LASER DIODE DESCRIPTION The NX5302SJ and NX5302SH are 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Synchronous Digital Hierarchy (SDH) system, short
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NX5302SJ
NX5302SH
NX5302SH
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C11531E
STM-16
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NX5302
Abstract: NX5302EH NX5302EJ NX5302EK NX5302SH NX5302SJ NX7312UA LD chip
Text: PRELIMINARY DATASHEET 1310 nm FIBER OPTIC COMMUNICATIONS NX5302 Series InGaAsP MQW LASER DIODE 5 mW FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT : ITH = 10 mA • HIGH SPEED: tr = 0.15 ns MAX tf = 0.3 ns MAX • WIDE OPERATING TEMPERATURE RANGE:
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NX5302
OC-12
NX7312UA
NX5302EH
NX5302EJ
NX5302EK
NX5302SH
NX5302SJ
LD chip
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NX5302SI
Abstract: NX5302SJ NX5302SK NX5302 NX5302EH NX5302EI NX5302SH
Text: DATA SHEET LASER DIODE NX5302 Series 1 310 nm FOR 156 Mb/s, SHORT HAUL 622 Mb/s InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5302 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Synchronous Digital Hierarchy (SDH) system, short haul and
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NX5302
NX5302SI
NX5302SJ
NX5302SK
NX5302EH
NX5302EI
NX5302SH
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NX5302
Abstract: NX5302EH NX5302EJ NX5302EK NX5302SH NX5302SJ NX7312UA
Text: NEC's 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5302 Series FOR FIBER OPTIC COMMUNICATIONS FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT : ITH = 10 mA • HIGH SPEED: tr = 0.15 ns MAX tf = 0.3 ns MAX • WIDE OPERATING TEMPERATURE RANGE:
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NX5302
OC-12
NX7312UA
NX5302EH
NX5302SJ
NX5302EJ
NX5302SK
NX5302EK
NX5302EH
NX5302EJ
NX5302EK
NX5302SH
NX5302SJ
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NX5302
Abstract: NX5302EH NX5302EI NX5302SH NX5302SI NX5302SJ NX5302SK
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATASHEET 1310 nm FIBER OPTIC COMMUNICATIONS NX5302 Series InGaAsP MQW LASER DIODE FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT ITH = 10 mA • HIGH SPEED tr = 0.15 ns MAX tf = 0.3 ns MAX • WIDE OPERATING TEMPERATURE RANGE:
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NX5302
OC-12,
NX7312UA
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NX5302
Abstract: NX5302EH NX5302SH NX5302SI NX5302SJ NX5302SK
Text: PRELIMINARY DATA SHEET LASER DIODE NX5302 Series 1 310 nm FOR 156 Mb/s, SHORT HAUL 622 Mb/s InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5302 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Synchronous Digital Hierarchy (SDH) system, short haul and
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NX5302
NX5302EH
NX5302SH
NX5302SI
NX5302SJ
NX5302SK
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