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    onsemi NVMFD5877NLT1G

    MOSFET 2N-CH 60V 6A 8DFN
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    NVMFD5877NLT1G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NVMFD5877NLT1G On Semiconductor NVMFD5877 - TRANSISTOR 6 A, 60 V, 0.06 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, 6 X 5 MM, HALOGEN AND LEAD FREE, PLASTIC, CASE 506BT-01, DFN8, SOP-8, FET General Purpose Power Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature


    Original     		PDF NVMFD5877NL AEC-Q101 NVMFD5877NL/D

    Untitled

    Abstract: No abstract text available
    Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature


    Original     		PDF NVMFD5877NL NVMFD5877NL/D

    Untitled

    Abstract: No abstract text available
    Text: NVMFD5877NL, NVMFD5877NLWF Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFD5877NLWF − Wettable Flanks Product


    Original     		PDF NVMFD5877NL, NVMFD5877NLWF AEC-Q101 NVMFD5877NL/D

    Untitled

    Abstract: No abstract text available
    Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature


    Original     		PDF NVMFD5877NL AEC-Q101 NVMFD5877NL/D

    NVMFD5877NLT1G

    Abstract: 5877NL
    Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature


    Original     		PDF NVMFD5877NL AEC-Q101 NVMFD5877NL/D NVMFD5877NLT1G 5877NL

    5877NL

    Abstract: NVMFD5877NLT1G
    Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature


    Original     		PDF NVMFD5877NL AEC-Q101 NVMFD5877NL/D 5877NL NVMFD5877NLT1G

    Untitled

    Abstract: No abstract text available
    Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFD5877NLWF − Wettable Flanks Product AEC−Q101 Qualified and PPAP Capable


    Original     		PDF NVMFD5877NL NVMFD5877NLWF NVMFD5877NL/D

    NVMFD5877NL

    Abstract: No abstract text available
    Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature


    Original     		PDF NVMFD5877NL AEC-Q101 NVMFD5877NL/D NVMFD5877NL

    NVMFD5877NL

    Abstract: No abstract text available
    Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature


    Original     		PDF NVMFD5877NL AEC-Q101 NVMFD5877NL/D

    Untitled

    Abstract: No abstract text available
    Text: NVMFD5877NL, NVMFD5877NLWF Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFD5877NLWF − Wettable Flanks Product


    Original     		PDF NVMFD5877NL, NVMFD5877NLWF NVMFD5877NL/D

    Untitled

    Abstract: No abstract text available
    Text: NVMFD5877NL Power MOSFET 60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL Features • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses 175°C Operating Temperature


    Original     		PDF NVMFD5877NL AEC-Q101 NVMFD5877NL/D