Untitled
Abstract: No abstract text available
Text: NVMFD5852NL Power MOSFET 40 V, 6.9 mW, 44 A, Dual N−Channel Logic Level, Dual SO−8FL Features • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable
|
Original
|
NVMFD5852NL
AEC-Q101
10able
NVMFD5852NL/D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NVMFD5852NL Power MOSFET 40 V, 6.9 mW, 44 A, Dual N−Channel Logic Level, Dual SO−8FL Features • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable
|
Original
|
NVMFD5852NL
AEC-Q101
10cable
NVMFD5852NL/D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NVMFD5852NL Power MOSFET 40 V, 6.9 mW, 44 A, Dual N−Channel Logic Level, Dual SO−8FL Features • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable
|
Original
|
NVMFD5852NL
AEC-Q101
10able
NVMFD5852NL/D
|
PDF
|
5852NL
Abstract: NVMFD5852NLT1G
Text: NVMFD5852NL Product Preview Power MOSFET 40 V, 7.5 mW, 40 A, Dual N−Channel Logic Level, Dual SO−8FL Features • • • • • http://onsemi.com Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses
|
Original
|
NVMFD5852NL
AEC-Q101
NVMFD5852NL/D
5852NL
NVMFD5852NLT1G
|
PDF
|
dual TMB 1800
Abstract: 5852NL
Text: NVMFD5852NL Power MOSFET 40 V, 6.9 mW, 44 A, Dual N−Channel Logic Level, Dual SO−8FL Features • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable
|
Original
|
NVMFD5852NL
AEC-Q101
10cable
NVMFD5852NL/D
dual TMB 1800
5852NL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NVMFD5852NL Power MOSFET 40 V, 6.9 mW, 44 A, Dual N−Channel Logic Level, Dual SO−8FL Features • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable
|
Original
|
NVMFD5852NL
AEC-Q101
NVMFD5852NL/D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NVMFD5852NL Power MOSFET 40 V, 6.9 mW, 44 A, Dual N−Channel Logic Level, Dual SO−8FL Features • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFD5852NLWF − Wettable Flanks Product
|
Original
|
NVMFD5852NL
NVMFD5852NLWF
NVMFD5852NL/D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NVMFD5852NL, NVMFD5852NLWF Power MOSFET 40 V, 6.9 mW, 44 A, Dual N−Channel Logic Level, Dual SO−8FL http://onsemi.com Features • • • • • • Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses
|
Original
|
NVMFD5852NL,
NVMFD5852NLWF
AEC-Q101
NVMFD5852NL/D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NVMFD5852NL Product Preview Power MOSFET 40 V, 6.9 mW, 40 A, Dual N−Channel Logic Level, Dual SO−8FL Features • • • • • http://onsemi.com Small Footprint 5x6 mm for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses
|
Original
|
NVMFD5852NL
AEC-Q101
NVMFD5852NL/D
|
PDF
|