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    onsemi NTR4101PT1G

    MOSFET P-CH 20V 1.8A SOT23-3
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    onsemi NTR4101PT1H

    MOSFET P-CH 20V 1.8A SOT23-3
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    DigiKey NTR4101PT1H Digi-Reel 21,174 1
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    MOSLEADER NTR4101PT1G-ML

    P-Channel -20V 2.4A SOT-23-3
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    DigiKey NTR4101PT1G-ML Reel 200
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    onsemi NTR4101PT1G.

    P Channel Mosfet, -20V, 3.2A Sot-23, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:730Mw Rohs Compliant: Yes |Onsemi NTR4101PT1G.
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    Newark NTR4101PT1G. Reel 18,000 3,000
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    Others NTR4101PT1G

    AVAILABLE EU
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    Chip 1 Exchange NTR4101PT1G 23,449
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    NTR4101P Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTR4101P On Semiconductor Trench Power MOSFET -20 V, Single P-Channel, SOT-23 Original PDF
    NTR4101PT1 On Semiconductor Trench Power MOSFET -20 V, -3.2 A, Single P-Channel SOT-23; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    NTR4101PT1 On Semiconductor Trench Power MOSFET -20 V, Single P-Channel, SOT-23 Original PDF
    NTR4101PT1G On Semiconductor Trench Power MOSFET -20 V, -3.2 A, Single P-Channel SOT-23; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    NTR4101PT1G On Semiconductor Trench Power MOSFET -20 V, Single P-Channel, SOT-23 Original PDF
    NTR4101PT1G TY Semiconductor MOSFET P-CH 20V 1.7-3.2A - SOT-23 Original PDF
    NTR4101PT1H ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 20V 3.2A SOT23 Original PDF

    NTR4101P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DIODE A16

    Abstract: NTR4101PT1G
    Text: Product specification NTR4101P, NTRV4101P Trench Power MOSFET V BR DSS −20 V, Single P−Channel, SOT−23 Features • • • • • RDS(ON) TYP ID MAX 70 mW @ −4.5 V −20 V −3.2 A 90 mW @ −2.5 V Leading −20 V Trench for Low RDS(on) −1.8 V Rated for Low Voltage Gate Drive


    Original
    NTR4101P, NTRV4101P DIODE A16 NTR4101PT1G PDF

    marking code TR4 sot23

    Abstract: marking code tr4 SOT-23 tr4 NTR4101PT1G NTR4101PT1 NTR4101P 302 SOT-23 DIODE
    Text: NTR4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Package is Available http://onsemi.com


    Original
    NTR4101P OT-23 OT-23 NTR4101P/D marking code TR4 sot23 marking code tr4 SOT-23 tr4 NTR4101PT1G NTR4101PT1 NTR4101P 302 SOT-23 DIODE PDF

    Untitled

    Abstract: No abstract text available
    Text: NTR4101P, NTRV4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint AEC Q101 Qualified − NTRV4101P


    Original
    NTR4101P, NTRV4101P NTR4101P/D PDF

    NTRV4101P

    Abstract: marking code tr4 sot 23 tr4 NTRV4101PT1G
    Text: NTR4101P, NTRV4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint AEC Q101 Qualified − NTRV4101P


    Original
    NTR4101P, NTRV4101P OT-23 OT-23 NTR4101P/D marking code tr4 sot 23 tr4 NTRV4101PT1G PDF

    tr4 surface mount

    Abstract: MOSFET P-channel SOT-23 sot-23 P-Channel MOSFET NTR4101PT1G "battery protection" marking code tr4 MARKING QG 6 PIN NTR4101P ntr4101p datasheet NTR4101PT1
    Text: NTR4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Package is Available http://onsemi.com


    Original
    NTR4101P OT-23 OT-23 NTR4101P/D tr4 surface mount MOSFET P-channel SOT-23 sot-23 P-Channel MOSFET NTR4101PT1G "battery protection" marking code tr4 MARKING QG 6 PIN NTR4101P ntr4101p datasheet NTR4101PT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTR4101P, NTRV4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint NTRV Prefix for Automotive and Other Applications Requiring


    Original
    NTR4101P, NTRV4101P NTR4101P/D PDF

    SOT-23 tr4

    Abstract: sot 23 tr4 NTR4101PT1 NTR4101P NTR4101PT1G
    Text: NTR4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Package is Available http://onsemi.com


    Original
    NTR4101P OT-23 OT-23 NTR4101P/D SOT-23 tr4 sot 23 tr4 NTR4101PT1 NTR4101P NTR4101PT1G PDF

    SOT-23 tr4

    Abstract: NTR4101PT1G
    Text: NTR4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Package is Available http://onsemi.com


    Original
    NTR4101P OT-23 OT-23 NTR4101P/D SOT-23 tr4 NTR4101PT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: NTR4101PT1 Product Preview Trench Power MOSFET -20 V, P-Channel, SOT-23 Single This P-Channel device was designed using ON Semiconductor’s leading trench technology for low RDS on performance in the SOT-23 package for surface mount PCBs. The low RDS(on) performance is


    Original
    NTR4101PT1 OT-23 NTR4101PT1/D PDF

    SOT-23 tr4

    Abstract: trench
    Text: NTR4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb Free Package for Green Manufacturing


    Original
    NTR4101P OT-23 OT-23 NTR4101P/D SOT-23 tr4 trench PDF

    marking code TR4 sot23

    Abstract: sot 23 tr4
    Text: NTR4101P, NTRV4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint NTRV Prefix for Automotive and Other Applications Requiring


    Original
    NTR4101P, NTRV4101P OT-23 OT-23 AEC-Q101 NTR4101P/D marking code TR4 sot23 sot 23 tr4 PDF

    marking code tr4

    Abstract: SOT-23 tr4 NTR4101P NTR4101PT1 NTR4101PT1G
    Text: NTR4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Package is Available http://onsemi.com


    Original
    NTR4101P OT-23 OT-23 NTR4101P/D marking code tr4 SOT-23 tr4 NTR4101P NTR4101PT1 NTR4101PT1G PDF

    marking code TR4 sot23

    Abstract: SOT-23 tr4 NTR4101P 2416w
    Text: NTR4101P, NTRV4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint NTRV Prefix for Automotive and Other Applications Requiring


    Original
    NTR4101P, NTRV4101P OT-23 OT-23 AEC-Q101 NTR4101P/D marking code TR4 sot23 SOT-23 tr4 NTR4101P 2416w PDF

    marking code TR4 sot23

    Abstract: SOT-23 tr4 NTR4101PT1G
    Text: NTR4101P Trench Power MOSFET −20 V, Single P−Channel, SOT−23 Features • • • • Leading −20 V Trench for Low RDS on −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint Pb−Free Package is Available http://onsemi.com


    Original
    NTR4101P OT-23 OT-23 marking code TR4 sot23 SOT-23 tr4 NTR4101PT1G PDF

    SMD Texas Instruments

    Abstract: No abstract text available
    Text: eZ430-Chronos Development Tool User's Guide Literature Number: SLAU292F November 2009 – Revised October 2013 Contents . 8


    Original
    eZ430-Chronosâ SLAU292F eZ430-Chronos SMD Texas Instruments PDF

    RTL8211E

    Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?


    Original
    ISL10 ISL11 RTL8211E ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055 PDF

    IRF5505

    Abstract: C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi
    Text: 6 7 B A 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 REV 08/03/04 CIRCUIT


    Original
    TEST10 TEST11 CS8406 RA300 RA302 1/16W IRF5505 C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi PDF

    SY8033BDBC

    Abstract: AR8152 B201006 ALC271 LA-6222P UB6252NF RT8209BGQW ALC271X KB926QFE0 PAV70
    Text: A B C D E 1 1 Compal Confidential 2 2 PAV70 DDR3 Schematics Document Intel Pineview Processor with Tigerpoint + DDRIII 2010-06-25 3 3 REV: 1.0 4 4 2006/08/18 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2007/8/18 Deciphered Date


    Original
    PAV70 R1325 100k-ohm C1109, C1111, C1112, C1156 C1163 C1166, CustomLA-6421P SY8033BDBC AR8152 B201006 ALC271 LA-6222P UB6252NF RT8209BGQW ALC271X KB926QFE0 PDF

    ISL9504

    Abstract: b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42
    Text: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT


    Original
    ISL10 ISL11 ISL9504 b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42 PDF

    L7803

    Abstract: 74LC125 HP C6602 AR2313 p66 apple U6301 SiL1362ACLU ZH510 b9718 L7206 1.2
    Text: 8 6 7 PDF CSA CONTENTS SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 2 System Block Diagram MASTER MASTER 3 Power Block Diagram MASTER MASTER 38 39 4 Table Items MASTER 40 MASTER 5 FUNC TEST 1 OF 2 MASTER 41 MASTER 6 Power Conn / Alias MASTER


    Original
    514S0128 J9710 L7803 74LC125 HP C6602 AR2313 p66 apple U6301 SiL1362ACLU ZH510 b9718 L7206 1.2 PDF

    RTL8211E

    Abstract: Marvell 88E1116R TC7SZ08AFEAPE TLA-6T213HF C5855 88E1116R 57B8 PP3V42 NTC 15D-7 u9701
    Text: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97A MLB SCHEMATIC C 681298 PRODUCTION RELEASED DATE 03/11/09 ? REFERENCED FROM T18 03/11/2009 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM


    Original
    PDF

    ISL9504

    Abstract: foxconn apple ar9350 C4722 l8400 C8450 C7550 D6905 foxconn m33 SOT23-5
    Text: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 MS MS MS PS PS PS PS PS PS PS PS PS


    Original
    PDF

    SOT23-5 AE31

    Abstract: c9450 ar9350 ZH510 M5621 C4722 FERR-120-OHM-1 6A4 mic DIODE D6905 C8450
    Text: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS


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    ISL6259

    Abstract: transistor C3229 ISL6258AHRTZ transistor c6074 ISL9504BCRZ of transistor c2570 transistor c3300 c3228 transistor transistor c3150 c2570 transistor
    Text: 8 7 6 5 4 3 2 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ECN DESCRIPTION OF REVISION C 0000813234 CK APPD DATE PRODUCTION RELEASED 2009-11-01


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