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    NTMS4816NR2G Search Results

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    NTMS4816NR2G Price and Stock

    Rochester Electronics LLC NTMS4816NR2G

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    DigiKey NTMS4816NR2G Bulk 106,224 1,071
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    onsemi NTMS4816NR2G

    MOSFET N-CH 30V 6.8A 8SOIC
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    Arrow Electronics NTMS4816NR2G 29 1
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    Rochester Electronics NTMS4816NR2G 7,500 1
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    Chip 1 Exchange NTMS4816NR2G 8,730
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    UMW NTMS4816NR2G

    MOSFET N-CH 30V 6.8A 8SOIC
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    DigiKey NTMS4816NR2G Cut Tape 1
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    NTMS4816NR2G Digi-Reel 1
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    NTMS4816NR2G Reel 3,000
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    Others NTMS4816NR2G

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    NTMS4816NR2G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTMS4816NR2G On Semiconductor Power MOSFET 30V, 11A, N-Channel Original PDF

    NTMS4816NR2G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NTMS4816N Power MOSFET 30 V, 11 A, N−Channel, SO−8 Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant


    Original     		PDF NTMS4816N NTMS4816N/D

    4816N

    Abstract: No abstract text available
    Text: NTMS4816N, NVMS4816N Power MOSFET 30 V, 11 A, N−Channel, SO−8 Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVMS4816N


    Original     		PDF NTMS4816N, NVMS4816N AEC-Q101 NTMS4816N/D 4816N

    4816N

    Abstract: NTMS4816NR2G
    Text: NTMS4816N Power MOSFET 30 V, 11 A, N-Channel, SO-8 Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThis is a Pb-Free Device http://onsemi.com


    Original     		PDF NTMS4816N NTMS4816N/D 4816N NTMS4816NR2G

    NTP2955G

    Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
    Text: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature


    Original     		PDF CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G

    Untitled

    Abstract: No abstract text available
    Text: NTMS4816N Power MOSFET 30 V, 11 A, N-Channel, SO-8 Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThis is a Pb-Free Device http://onsemi.com


    Original     		PDF NTMS4816N NTMS4816N/D