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    NTE3320 Price and Stock

    NTE Electronics Inc NTE3320

    Single Igbt, 600V, 50A; Continuous Collector Current:50A; Collector Emitter Saturation Voltage:2.45V; Power Dissipation:200W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:-; Product Range:-; Msl:- Rohs Compliant: Yes |Nte Electronics NTE3320
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    • 1 $26.55
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    NTE3320 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE3320 NTE Electronics Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Original PDF

    NTE3320 Datasheets Context Search

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    NTE3320

    Abstract: No abstract text available
    Text: NTE3320 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D Fourth Generation IGBT D Enhancement Mode Type D High Speed D Low Switching Loss D Low Saturation Voltage Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3320 NTE3320

    NTE3320

    Abstract: No abstract text available
    Text: NTE3320 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3320 NTE3320

    Untitled

    Abstract: No abstract text available
    Text: NTE3320 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3320