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    NTE3311 Price and Stock

    NTE Electronics Inc NTE3311

    Trans IGBT Chip N-CH 600V 25A 150W 3-Pin(3+Tab) TO-3P
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    Arrow Electronics NTE3311 22 1
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    Onlinecomponents.com NTE3311 2
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    NTE3311 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE3311 NTE Electronics Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Original PDF

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    NTE3311

    Abstract: NTE331
    Text: NTE3311 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3311 NTE3311 NTE331

    NTE3311

    Abstract: NTE331
    Text: NTE3311 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		PDF NTE3311 NTE3311 NTE331