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    NTE Electronics Inc

    NTE Electronics Inc NTE3303

    INSULATED GATE BIPOLAR TRANSISTOR, 15A I(C), 600V V(BR)CES, N-CHANNEL
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    NTE3303 Datasheets (1)

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    NTE3303 NTE Electronics Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Original PDF

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    NTE3303

    Abstract: No abstract text available
    Text: NTE3303 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		NTE3303 NTE3303 PDF

    high speed diode 15A

    Abstract: NTE3303
    Text: NTE3303 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		NTE3303 high speed diode 15A NTE3303 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE3303 Insulated Gate Bipolar Transistor N−Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified


    Original     		NTE3303 PDF