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    NTE2380 Price and Stock

    NTE Electronics Inc NTE2380

    Power Mosfet N-channel 500V Id=2A TO-220 Case High Speed Switch Enhancement Mode Rds=4 Ohm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NTE2380 367
    • 1 -
    • 10 $5.35
    • 100 $4.17
    • 1000 $3.71
    • 10000 $3.47
    Buy Now
    Bristol Electronics NTE2380 2 1
    • 1 $8.96
    • 10 $8.96
    • 100 $8.96
    • 1000 $8.96
    • 10000 $8.96
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    Quest Components NTE2380 13
    • 1 $12.42
    • 10 $6.21
    • 100 $6.21
    • 1000 $6.21
    • 10000 $6.21
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    NTE2380 1
    • 1 $12
    • 10 $8
    • 100 $8
    • 1000 $8
    • 10000 $8
    Buy Now
    TME NTE2380 1 1
    • 1 $6.76
    • 10 $5.38
    • 100 $4.83
    • 1000 $4.83
    • 10000 $4.83
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    NTE2380 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE2380 NTE Electronics Complementary Silicon Gate MOSFET Enhancement Mode, High Speed Switch Original PDF

    NTE2380 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE2381

    Abstract: No abstract text available
    Text: NTE2380 N–Ch & NTE2381 (P–Ch) Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch Description: The NTE2380 (N–Ch) and NTE2381 (P–Ch) are complementary TMOS power FETs in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers.


    Original
    PDF NTE2380 NTE2381 NTE2381

    NTE2382

    Abstract: No abstract text available
    Text: POWER MOS FIELD EFFECT TRANSISTORS NTE Type Number Description 66 N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL


    OCR Scan
    PDF T0220 150ns, 350ns, 110ns, 160ns NTE2382

    dual TMB 1800

    Abstract: chopper trans 60NS MOSFET 50 amp 1000 volt MOSFET RF P-channel VHF low noise dual P-Channel JFET
    Text: N T E ELE CTRONICS INC SSE D bMaiSST 000Sb2S TMb BIN TE T -tt-O l DWER MOS Fi Gatato Source Cutott Voltage Volta Gate to Source Breakdown Voltage (Volt») Maximum Continuous Drain Currant (Amp*) BVosa ±20 Max >D ros(On) 12 0.18 Max case Styl« Di»g. Number


    OCR Scan
    PDF 000Sb2S NTE2381) T0220 250pA dual TMB 1800 chopper trans 60NS MOSFET 50 amp 1000 volt MOSFET RF P-channel VHF low noise dual P-Channel JFET

    low voltage mosfet switch 3 amp

    Abstract: mosfet 55 nf 06 200 Amp mosfet NTE2383 NTE465 NTE2381 NTE2382 jfet pch 300 Amp mosfet dual P-Channel JFET
    Text: N T E ELECTRONICS 1? E INC DfHHfEP • ^431251 0001112 4 ClCMfl mjgJMMiB ■ ■WiMlfcJJlMBi HTE TYPE NO. DESCRIPTION AND APHJCAIWN CASE STYLE DUU HO. DRAW TO SOURCE BREAKDOWN . VOUAGE fill T-39-OJ votnæ MAX CONTINUOUS DRAIN CURRENT STATIC DRAIN TO ON SOURCE


    OCR Scan
    PDF 17EJD bM312ST 00G1112 T-39-0) NTE465) NTE464) low voltage mosfet switch 3 amp mosfet 55 nf 06 200 Amp mosfet NTE2383 NTE465 NTE2381 NTE2382 jfet pch 300 Amp mosfet dual P-Channel JFET

    "High Speed Switch"

    Abstract: TE 2383
    Text: POWER MOS FIELD EFFECT TRANSISTORS Style Dlag. Numbar Drain to Sourca Breakdown Voltaga Volta BVdss V ( O t f) b Vqss •o rD8(0") Cm gfs Pd N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High


    OCR Scan
    PDF TCs25 NT1300 T0220 150ns, 350ns, 110ns, "High Speed Switch" TE 2383