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    NTE2361 Price and Stock

    NTE Electronics Inc NTE2361

    Transistor, bjt, npn,50V V(Br)Ceo,500Ma I(C),to-92Var Rohs Compliant: Yes |Nte Electronics NTE2361
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    Quest Components NTE2361 3
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    NTE2361 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE2361 NTE Electronics Silicon Complementary Transistor High Speed Switch Original PDF

    NTE2361 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NTE2361 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.200 h(FE) Max. Current gain.


    Original     		PDF NTE2361 Freq300M

    nte2361

    Abstract: NTE2362
    Text: NTE2361 NPN & NTE2362 (PNP) Silicon Complementary Transistors High Speed Switch Description: The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general–purpose amplifier and high speed switching applications. The high gain of these devices makes


    Original     		PDF NTE2361 NTE2362 100mA, 100mA NTE2362) nte2361 NTE2362

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


    Original     		PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    NTE2360

    Abstract: No abstract text available
    Text: BI-POL AR TRANSISTORS Emitter to Base Volts Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) »T Case Style Diag. No. BVCeo BV ebo hpE Pd T0220 Isol Tab 560a •c 8 BV cbo Darlington Switch w/lntemal Damper & Zener Diode, tf = 1ns 60±10 60±10


    OCR Scan     		PDF T0220 T0126 NTE2362) NTE2361) 00D3S27 NTE2360

    "High Speed Switch"

    Abstract: TE 2383
    Text: POWER MOS FIELD EFFECT TRANSISTORS Style Dlag. Numbar Drain to Sourca Breakdown Voltaga Volta BVdss V ( O t f) b Vqss •o rD8(0") Cm gfs Pd N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High


    OCR Scan     		PDF TCs25 NT1300 T0220 150ns, 350ns, 110ns, "High Speed Switch" TE 2383