NTE216
Abstract: driver transistor hfe 60 vce 1v
Text: NTE216 Silicon NPN Transistor High Speed Switch, Core Driver Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
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NTE216
150mA,
300mA,
500mA,
800mA,
NTE216
driver transistor hfe 60
vce 1v
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NTE2164
Abstract: No abstract text available
Text: NTE2164 Integrated Circuit 65,536 X 1 Bit Dynamic Random Access Memory Description: The NTE2164 is 65, 536 words by 1 bit Dynamic N−Channel MOS RAM designed to operate from a single +5V power supply. The negative−voltage substrate bias is internally generated−its operation
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NTE2164
NTE2164
Note12
Note13
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vce 1v
Abstract: NTE216
Text: NTE216 Silicon NPN Transistor High Speed Switch, Core Driver Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
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Original
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NTE216
150mA,
300mA,
500mA,
800mA,
vce 1v
NTE216
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PDF
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Untitled
Abstract: No abstract text available
Text: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8-B it Multiplying D/A Converter Range Control 0 Compensation A6 n 0 A7 0 V ret(-) A 5B ^ A1 Q 0 A8 (LSB) A2 B 0 Data Out a: Q A7 A3 Q Q Data In A 2 g 0 A6 A4 Q j A0 Q
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OCR Scan
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NTE2056
16-Lead
NTE2102
350ns
NTE2104
200ns
NTE2107
22-Lead
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PDF
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NTE199
Abstract: NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K
Text: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page MPX2010GS MPX2050DP MPX2050GP MPX2100A MPX2100AP 15.08 17.27 17.69 17.74 14.57 MOT
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MPX2010GS
MTP75N06HD
NTE102A
NTE2312
MPX2050DP
MTP8N50E
NTE103
NTE2315
MPX2050GP
MTW10N100E
NTE199
NTE2324
NTE262
NTE109
NTE3098
nte222
NTE290A
nte184
NTE192A
NTE309K
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PDF
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a5 gnd
Abstract: NTE4164 NTE2117 NTE2164 BB 298 NTE2102 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128
Text: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8 -B it Multiplying D/A Converter NTE2102 16-Lead DIP, See Diag. 249 NMOS, 1K Static RAM (SRAM), 350ns NTE2104 16-Lead DIP, See Diag. 249 NMOS, 4K Dynamic RAM (DRAM), 200ns
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OCR Scan
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NTE2056
16-Lead
NTE2102
350ns
NTE2104
200ns
NTE2107
22-Lead
a5 gnd
NTE4164
NTE2117
NTE2164
BB 298
64k dynamic RAM
64k nmos static ram
NTE2114
NTE2128
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PDF
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