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    NTE Electronics Inc NTE210

    Bipolar Transistor, Npn, 75V; Transistor Polarity:Npn; Collector Emitter Voltage Max:75V; Continuous Collector Current:1A; Power Dissipation:1.67W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:375Mhz Rohs Compliant: Yes |Nte Electronics NTE210
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    NTE210 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE210 NTE Electronics Silicon Complementary Transistor General Purpose Output & Driver Original PDF
    NTE210 NTE Electronics Transistors - Bi-Polar Scan PDF
    NTE2101 NTE Electronics Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns Original PDF
    NTE2102 NTE Electronics Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns Original PDF
    NTE2104 NTE Electronics MICROPROCESSOR & MEMORY CIRCUITS Scan PDF
    NTE2107 NTE Electronics MICROPROCESSOR & MEMORY CIRCUITS Scan PDF

    NTE210 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE2107

    Abstract: No abstract text available
    Text: NTE2107 Integrated Circuit NMOS, 4K Dynamic RAM DRAM Description: The NTE2107 is a 4096 word by 1 bit dynamic random access memory (RAM) that incorporates the latest memory design features and can be used in a wide variety of applications, from those which


    Original     		PDF NTE2107 NTE2107

    NTE211

    Abstract: NTE210
    Text: NTE210 NPN & NTE211 (PNP) Silicon Complementary Transistors General Purpose Output & Driver Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type package designed for general purpose, medium voltage, medium power amplifier and driver applications


    Original     		PDF NTE210 NTE211 500mA, 20MHz NTE211 NTE210

    NTE2102

    Abstract: NTE210
    Text: NTE2102 Integrated Circuit NMOS, 1K Static RAM SRAM , 350ns Description: The NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead DIP type package designed using N–Channel depletion mode silicon gate technology. Static storage


    Original     		PDF NTE2102 350ns NTE2101 NTE2102 NTE210

    NTE2104

    Abstract: No abstract text available
    Text: NTE2104 Integrated Circuit 4096 X 1 − Bit DYNAMIC RAM Description: The NTE2104 is a 4096 word by 1 bit MOS random access memory circuit fabricated with an N − Channel Silicon Gate Process. The NTE2104 employs a single transistor storage cell utilizing a dynamic control circuitry to achieve optimum performance with low power dissipation.


    Original     		PDF NTE2104 NTE2104

    NTE210

    Abstract: NTE211
    Text: NTE210 NPN & NTE211 (PNP) Silicon Complementary Transistors General Purpose Output & Driver Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type pack­ age designed for general purpose, medium voltage, medium power amplifier and driver applications


    Original     		PDF NTE210 NTE211 500mA, 20MHz NTE210 NTE211

    123AP

    Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130
    Text: NTE Electronics Transistors Bi-Polar Transistors Ñ Continued Stock No. Mfr.Õs Type Polarity and Material Description and Application 935-0755 935-0760 935-0840 935-0841 935-0845 935-0855 107 108 123A 123AP 124 126 NPN-Si NPN-Si NPN-Si NPN-Si NPN-Si PNP-Ge


    Original     		PDF 123AP NTE159) NTE396) NTE375) NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130

    a5 gnd

    Abstract: NTE4164 NTE2117 NTE2164 BB 298 NTE2102 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128
    Text: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8 -B it Multiplying D/A Converter NTE2102 16-Lead DIP, See Diag. 249 NMOS, 1K Static RAM (SRAM), 350ns NTE2104 16-Lead DIP, See Diag. 249 NMOS, 4K Dynamic RAM (DRAM), 200ns


    OCR Scan     		PDF NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead a5 gnd NTE4164 NTE2117 NTE2164 BB 298 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128

    NTE130

    Abstract: 27mhz rf amplifier NTE197 NTE199 NTE241 16 amp npn darlington power transistors t03 27mhz rf ic NTE196 NTE210 NTE211
    Text: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts BV ebo " fe Pd *T 4 30 Min 8 150 80 (CER) 5 20 Min 50* 1.8 4 80 (CER) 5 20 Min 50* 4 Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) 'c 1.5 BVcbo BVceo 70 70 (CER)


    OCR Scan     		PDF 27MHz, NTE197) T0220 NTE196) 27MHz) T039HS NTE130 27mhz rf amplifier NTE197 NTE199 NTE241 16 amp npn darlington power transistors t03 27mhz rf ic NTE196 NTE210 NTE211

    Untitled

    Abstract: No abstract text available
    Text: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8-B it Multiplying D/A Converter Range Control 0 Compensation A6 n 0 A7 0 V ret(-) A 5B ^ A1 Q 0 A8 (LSB) A2 B 0 Data Out a: Q A7 A3 Q Q Data In A 2 g 0 A6 A4 Q j A0 Q


    OCR Scan     		PDF NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead

    NTE130

    Abstract: NTE199 NPN RF Amplifier NTE241
    Text: BI-POLAR TRANSISTORS Olag. No. •c 0VCBO BVceo BV ebo hFE Pd •t RF Pwr Amp/Driver, CB P0 = 3.5W Min, 27MHz, 12.5V T 039 21a 1.5 70 70 (CEFt) 4 30 Min 8 150 NPN-Si Audio Power Output & Medium Power Switching (Compì to NTE 197) T0220 11 a 7 90 80 (CER)


    OCR Scan     		PDF 27MHz, NTE234) NTE211) NTE210) T0220 T0220 NTE130 NTE199 NPN RF Amplifier NTE241

    NTE130

    Abstract: NTE199 NTE234 NTE192A 27MHZ NTE196 NTE197 T092 T092H NTE192
    Text: N T E ELECTRONICS INC S2E D • b M B l S S ^ a D O S S I 6 024 B I N T E TRANSI5TÖ BS-6U PO LA B T —33—01 Maximum Breakdown Voltage Collector to Base Volts) Collector to Emitter (Volts) Emitter Io Basa (Volts) Typical Forward Current Gain Maximum Collector


    OCR Scan     		PDF T-33-01 NTE192A) T092HS 27MHZ, 226MP NTE226 T0237 45MHZ NTE199) 50MHZ) NTE130 NTE199 NTE234 NTE192A 27MHZ NTE196 NTE197 T092 T092H NTE192