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    NTD60N02R Price and Stock

    Rochester Electronics LLC NTD60N02R-1G

    MOSFET N-CH 25V 8.5A/32A IPAK
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    DigiKey NTD60N02R-1G Tube 334,998 2,664
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    onsemi NTD60N02R

    MOSFET N-CH 25V 8.5A/32A DPAK
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    DigiKey NTD60N02R Tube 1,950
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    Bristol Electronics NTD60N02R 465
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    Quest Components NTD60N02R 372
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    onsemi NTD60N02RG

    MOSFET N-CH 25V 8.5A/32A DPAK
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    DigiKey NTD60N02RG Tube
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    onsemi NTD60N02RT4

    MOSFET N-CH 25V 8.5A/32A DPAK
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    Avnet Americas NTD60N02RT4 Reel 4 Weeks 1
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    Quest Components NTD60N02RT4 1,118
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    Rochester Electronics NTD60N02RT4 1,133 1
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    onsemi NTD60N02RT4G

    MOSFET N-CH 25V 8.5A/32A DPAK
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    DigiKey NTD60N02RT4G Reel
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    Bristol Electronics NTD60N02RT4G 30,553
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    NTD60N02RT4G 200
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    Quest Components NTD60N02RT4G 1,024
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    NTD60N02RT4G 86
    • 1 $0.775
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    NexGen Digital NTD60N02RT4G 1,653
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    Velocity Electronics NTD60N02RT4G 299
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    NTD60N02R Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NTD60N02R On Semiconductor Power MOSFET 60 A, 24 V Original PDF
    NTD60N02R On Semiconductor Power MOSFET 62 A, 24 V N-channel. Original PDF
    NTD60N02R-001 On Semiconductor Power MOSFET 62 A, 24 V, N-Channel, DPAK Original PDF
    NTD60N02R-032 On Semiconductor Power MOSFET 62 A, 24 V, N-Channel, DPAK Original PDF
    NTD60N02R-032G On Semiconductor Power MOSFET 62 A, 24 V, N-Channel, DPAK Original PDF
    NTD60N02R-035 On Semiconductor Power MOSFET 62 A, 25V, N-Channel DPAK Original PDF
    NTD60N02R1 On Semiconductor Power MOSFET 60 A, 24 V Original PDF
    NTD60N02R-1G On Semiconductor Power MOSFET 62 A, 24 V, N-Channel, DPAK Original PDF
    NTD60N02R-35G On Semiconductor Power MOSFET 62 A, 25V, N-Channel DPAK; Package: 3.5 mm IPAK, Straight Lead; No of Pins: 3; Container: Rail; Qty per Container: 75 Original PDF
    NTD60N02RG On Semiconductor Power MOSFET 62 A, 24 V N-channel. Original PDF
    NTD60N02RT4 On Semiconductor Power MOSFET 60 A, 24 V Original PDF
    NTD60N02RT4 On Semiconductor Power MOSFET 62 A, 24 V N-channel. Original PDF
    NTD60N02RT4G On Semiconductor Power MOSFET 62 A, 24 V N-channel. Original PDF

    NTD60N02R Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T60 N02R

    Abstract: T60N02R MOSFEt t60 n02r 60n02r T 60 N02R n02r NTD60N02RG 60N02 NTD60N02RT4G NTD60N02R
    Text: NTD60N02R Power MOSFET 62 A, 24 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02RG NTD60N02RT4 NTD60N02RT4G NTD60N02R-1 NTD60N02R-1G BRD8011/D. T60 N02R T60N02R MOSFEt t60 n02r 60n02r T 60 N02R n02r 60N02

    T60N02R

    Abstract: No abstract text available
    Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02R/D T60N02R

    60N02

    Abstract: t60 n02r NTD60N02RG N02R T60N02R 369D NTD60N02R NTD60N02RT4 NTD60N02RT4G T 60 N02R
    Text: NTD60N02R Power MOSFET 62 A, 24 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02R/D 60N02 t60 n02r NTD60N02RG N02R T60N02R 369D NTD60N02R NTD60N02RT4 NTD60N02RT4G T 60 N02R

    T60 N02R

    Abstract: T60N02R MOSFEt t60 n02r T 60 N02R 60N02R 60N02 369D N02R NTD60N02R NTD60N02RT4
    Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features Drain−to−Source Voltage Symbol Value 8.0 mW @ 4.5 V 60 A 1 VGS ±20 Vdc Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current Continuous @ TC = 25°C, Chip


    Original     		PDF NTD60N02R NTD60N02R/D T60 N02R T60N02R MOSFEt t60 n02r T 60 N02R 60N02R 60N02 369D N02R NTD60N02R NTD60N02RT4

    T60 N02R

    Abstract: T60N02R 60N02R 60N02 n02r
    Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features Drain−to−Source Voltage Symbol Value 8.4 mW @ 10 V 60 A 1 VGS ±20 Vdc Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current Continuous @ TC = 25°C, Chip


    Original     		PDF NTD60N02R NTD60N02R/D T60 N02R T60N02R 60N02R 60N02 n02r

    Untitled

    Abstract: No abstract text available
    Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R r14525 NTD60N02R/D

    n02r

    Abstract: T60 N02R dpak DIODE 948 T60N02R 60N02R 60N02 ntd60n02rg 100 amp mosfet NTD60N02R T 948
    Text: NTD60N02R Power MOSFET 62 Amps, 24 Volts N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02R/D n02r T60 N02R dpak DIODE 948 T60N02R 60N02R 60N02 ntd60n02rg 100 amp mosfet NTD60N02R T 948

    T60N02R

    Abstract: T60 N02rg T60N02RG t60n02 N02rg T60-N02RG t60.n02r n02r n02rg t60 NTD60N02R
    Text: NTD60N02R Power MOSFET 62 A, 25 V, N−Channel, DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02R/D T60N02R T60 N02rg T60N02RG t60n02 N02rg T60-N02RG t60.n02r n02r n02rg t60 NTD60N02R

    60N02

    Abstract: t60 n02r T60N02R T 60 N02R 369D N02R NTD60N02R NTD60N02RG NTD60N02RT4 NTD60N02RT4G
    Text: NTD60N02R Power MOSFET 62 A, 25 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02R/D 60N02 t60 n02r T60N02R T 60 N02R 369D N02R NTD60N02R NTD60N02RG NTD60N02RT4 NTD60N02RT4G

    NTD60N02R

    Abstract: NTD60N02RG T60 N02R NTD60N02RT4G 369D N02R NTD60N02RT4 T 60 N02R
    Text: NTD60N02R Power MOSFET 62 A, 24 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02R/D NTD60N02R NTD60N02RG T60 N02R NTD60N02RT4G 369D N02R NTD60N02RT4 T 60 N02R

    60N02

    Abstract: 60N02R n02r 369A-13 NTD60N02R NTD60N02R1 NTD60N02RT4
    Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02R/D 60N02 60N02R n02r 369A-13 NTD60N02R NTD60N02R1 NTD60N02RT4

    t60n02r

    Abstract: T60 N02R 60N02R T 60 N02R 60N02
    Text: NTD60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02R/D t60n02r T60 N02R 60N02R T 60 N02R 60N02

    T60 N02RG

    Abstract: T60N02R T60N02 T-60
    Text: NTD60N02R Power MOSFET 62 A, 25 V, N−Channel, DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original     		PDF NTD60N02R NTD60N02R/D T60 N02RG T60N02R T60N02 T-60

    automatica

    Abstract: JESD22 NCP5201 NCP5201MN NCP5201MNG NCP5201MNR2 NCP5201MNR2G NTD60N02R DFN-18
    Text: NCP5201 Dual Output DDR Power Controller The NCP5201 Dual DDR Power Controller is specifically designed as a total power solution for a high current DDR memory system. This IC combines the efficiency of a PWM controller for the VDDQ supply with the simplicity of a linear regulator for the VTT


    Original     		PDF NCP5201 NCP5201 QFN-18. NCP5201/D automatica JESD22 NCP5201MN NCP5201MNG NCP5201MNR2 NCP5201MNR2G NTD60N02R DFN-18

    MOSFET IGNITION

    Abstract: NTMS4700NR2
    Text: ON Semiconductor Selector Guide − Power MOSFET Products Power MOSFET Products In Brief . . . ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑ ÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ


    Original     		PDF O-264 MOSFET IGNITION NTMS4700NR2

    LL4148-1

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document order number: MC33703 Rev 3.0, 11/2005 10 A Switch-Mode Power Supply with Linear Regulator 34703 The 34703 provides the means to efficiently supply the Power Quad Integrated Communications Controller QUICC , and other


    Original     		PDF MC33703 MC33703 LL4148-1

    r9824

    Abstract: R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523
    Text: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 D C B PAGE PDF 1 2 3 4 6 7 8 9 10 11 13* 14 16


    Original     		PDF 1/10W XW9902 XC9901 50R28 U9500 XW9903 25MIL 10MIL R9915 r9824 R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523

    IRF5505

    Abstract: C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi
    Text: 6 7 B A 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 REV 08/03/04 CIRCUIT


    Original     		PDF TEST10 TEST11 CS8406 RA300 RA302 1/16W IRF5505 C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi

    ISL9504

    Abstract: foxconn apple ar9350 C4722 l8400 C8450 C7550 D6905 foxconn m33 SOT23-5
    Text: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 MS MS MS PS PS PS PS PS PS PS PS PS


    Original     		PDF

    SOT23-5 AE31

    Abstract: c9450 ar9350 ZH510 M5621 C4722 FERR-120-OHM-1 6A4 mic DIODE D6905 C8450
    Text: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS


    Original     		PDF

    APPLE A6 CHIP

    Abstract: cf325 W07 sot 23 C-492-5 SMD M05 sot23 C4977 cf406 p66 apple c5297 I342
    Text: 8 6 7 PDF CSA CONTENTS IMG5 17" REV E 11/01/05 SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 System Block Diagram FINO-DD 06/20/2005 TABLE_TABLEOFCONTENTS_ITEM 3 4 Power Block Diagram FINO-PC 06/20/2005 5 Table Items FINO-M23 08/26/2005 6


    Original     		PDF RF420 CF414 1/16W RF424 APPLE A6 CHIP cf325 W07 sot 23 C-492-5 SMD M05 sot23 C4977 cf406 p66 apple c5297 I342

    3phase winding data 3.7 kw to 110 kw

    Abstract: BAT54HT1 NCP3418B NCP5381 NCP5381MNR2G VR10 VR11 SCHEMATIC DIAGRAM OF POWER SAVER DEVICE 0.47 MF CAPACITOR 30G122
    Text: NCP5381 2/3/4 Phase Buck Controller for VR10 and VR11 Pentium IV Processor Applications The NCP5381 is a two−, three−, or four−phase buck controller which combines differential voltage and current sensing, and adaptive voltage positioning to power Intel’s most demanding


    Original     		PDF NCP5381 NCP5381 NCP5381/D 3phase winding data 3.7 kw to 110 kw BAT54HT1 NCP3418B NCP5381MNR2G VR10 VR11 SCHEMATIC DIAGRAM OF POWER SAVER DEVICE 0.47 MF CAPACITOR 30G122

    Untitled

    Abstract: No abstract text available
    Text: NCP5201 Dual Output DDR Power Controller The NCP5201 Dual DDR Power Controller is specifically designed as a total power solution for a high current DDR memory system. This IC combines the efficiency of a PWM controller for the VDDQ supply with the simplicity of a linear regulator for the VTT


    Original     		PDF NCP5201 QFN-18. NCP5201/D

    a 1712 mosfet

    Abstract: marking code E5 SMD ic k 4114 MOSFET JUPITER development 0259 qfn BGR13 c90 thermistor ic smd a 1712
    Text: NIS3001 Product Preview Integrated Drive and MOSFET Power Chip for Synchronous Buck Controllers http://onsemi.com The NIS3001 is a fully integrated DC to DC synchronous Buck converter. It contains two power mosfets that are controlled by an internal Driver. All three die are packaged in a power QFN and are


    Original     		PDF NIS3001 r14525 NIS3001/D a 1712 mosfet marking code E5 SMD ic k 4114 MOSFET JUPITER development 0259 qfn BGR13 c90 thermistor ic smd a 1712