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    NTD5406NT4G Price and Stock

    onsemi NTD5406NT4G

    MOSFET N-CH 40V 12.2A/70A DPAK
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    NTD5406NT4G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NTD5406NT4G On Semiconductor NTD5406 - TRANSISTOR 12.2 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, PLASTIC, CASE 369C-01, DPAK-3, FET General Purpose Power Original PDF
    NTD5406NT4G On Semiconductor Power MOSFET 40 V, 70 A, Single N-Channel, DPAK Original PDF

    NTD5406NT4G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STD5406N

    Abstract: No abstract text available
    Text: NTD5406N, STD5406N Power MOSFET 40 V, 70 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge STD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101


    Original     		PDF NTD5406N, STD5406N NTD5406N/D STD5406N

    48 06ng

    Abstract: NTD5406N 06NG NTD5406NG NTD5406NT4G
    Text: NTD5406N Power MOSFET 40 V, 70 A, Single N−Channel, DPAK Features • • • • Low RDS on High Current Capability Low Gate Charge These are Pb−Free Devices http://onsemi.com Applications • Electronic Brake Systems • Electronic Power Steering • Bridge Circuits


    Original     		PDF NTD5406N NTD5406N/D 48 06ng NTD5406N 06NG NTD5406NG NTD5406NT4G

    NTP2955G

    Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
    Text: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature


    Original     		PDF CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G

    NTD5406NG

    Abstract: NTD5406N 06NG NTD5406NT4G 5406N
    Text: NTD5406N Power MOSFET 40 V, 70 A, Single N−Channel, DPAK Features • • • • Low RDS on High Current Capability Low Gate Charge These are Pb−Free Devices http://onsemi.com Applications • Electronic Brake Systems • Electronic Power Steering • Bridge Circuits


    Original     		PDF NTD5406N NTD5406N/D NTD5406NG NTD5406N 06NG NTD5406NT4G 5406N

    5406N

    Abstract: NTD5406 06ng NTD5406N NTD5406NG NTD5406NT4G 5406NG
    Text: NTD5406N Power MOSFET 40 V, 70 A, Single N−Channel, DPAK Features • • • • Low RDS on High Current Capability Low Gate Charge These are Pb−Free Devices http://onsemi.com Applications • Electronic Brake Systems • Electronic Power Steering • Bridge Circuits


    Original     		PDF NTD5406N NTD5406N/D 5406N NTD5406 06ng NTD5406N NTD5406NG NTD5406NT4G 5406NG

    06NG

    Abstract: NTD5406N NTD5406NG NTD5406NT4G
    Text: NTD5406N Power MOSFET 40 V, 70 A, Single N−Channel, DPAK Features • • • • Low RDS on High Current Capability Low Gate Charge These are Pb−Free Devices http://onsemi.com Applications • Electronic Brake Systems • Electronic Power Steering • Bridge Circuits


    Original     		PDF NTD5406N NTD5406N/D 06NG NTD5406N NTD5406NG NTD5406NT4G

    STD5406N

    Abstract: No abstract text available
    Text: NTD5406N, STD5406N Power MOSFET 40 V, 70 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge AEC Q101 Qualified − STD5406N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com Applications


    Original     		PDF NTD5406N, STD5406N NTD5406N/D STD5406N

    STD5406N

    Abstract: 5406NG
    Text: NTD5406N, STD5406N Power MOSFET 40 V, 70 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge AEC Q101 Qualified − STD5406N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com Applications


    Original     		PDF NTD5406N, STD5406N NTD5406N/D 5406NG

    STD5406N

    Abstract: No abstract text available
    Text: NTD5406N, STD5406N Power MOSFET 40 V, 70 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge AEC−Q101 Qualified and PPAP Capable − STD5406N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com


    Original     		PDF NTD5406N, STD5406N AEC-Q101 NTD5406N/D