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    NT5CB256M8GN

    Abstract: NT5CC256M8GN NT5CB256M8GN-DI NT5CC256M8GN-D NT5CC512M4GN NT5CC512M4GN-CG NT5CB256M8GN-CG "2Gb DDR3 SDRAM" NT5C NT5CB256M8
    Text: 2Gb DDR3 SDRAM G-Die NT5CB512M4GN / NT5CB256M8GN NT5CC512M4GN / NT5CC256M8GN Feature  VDD = VDDQ = 1.5V ± 0.075V JEDEC Standard  Programmable Burst Length: 4, 8 Power Supply  8n-bit prefetch architecture VDD = VDDQ = 1.35V -0.0675V/+0.1V  Output Driver Impedance Control


    Original     		PDF NT5CB512M4GN NT5CB256M8GN NT5CC512M4GN NT5CC256M8GN 78Balls NT5CC256M8GN NT5CB256M8GN-DI NT5CC256M8GN-D NT5CC512M4GN-CG NT5CB256M8GN-CG "2Gb DDR3 SDRAM" NT5C NT5CB256M8

    NT5CC256

    Abstract: NT5CB256M8GN- CG
    Text: 2Gb DDR3 SDRAM G-Die NT5CB512M4GN / NT5CB256M8GN NT5CC512M4GN / NT5CC256M8GN Feature  1.35V -0.0675V/+0.1V & 1.5V ± 0.075V JEDEC  Output Driver Impedance Control Standard Power Supply  Differential bidirectional data strobe  8 Internal memory banks (BA0- BA2)


    Original     		PDF NT5CB512M4GN NT5CB256M8GN NT5CC512M4GN NT5CC256M8GN 78Balls NT5CC256 NT5CB256M8GN- CG

    DDR3-1866-CL12

    Abstract: NT5CB256M8GN-DI
    Text: 2Gb DDR3 SDRAM G-Die NT5CB256M8GN / NT5CC256M8GN Feature Table 1: CAS Latency Frequency Speed Bins -BE* -CG/CGI* -DI* -EJ* DDR3 L -1066-CL7 DDR3 (L)-1333-CL9 DDR3(L)-1600-CL11 Units DDR3-1866-CL12 Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.)


    Original     		PDF NT5CB256M8GN NT5CC256M8GN -1066-CL7 -1333-CL9 -1600-CL11 DDR3-1866-CL12 NT5CB256M8GN-DI

    NT5CC256

    Abstract: No abstract text available
    Text: 2Gb DDR3 SDRAM G-Die NT5CB512M4GN / NT5CB256M8GN NT5CC512M4GN / NT5CC256M8GN Feature  1.35V -0.0675V/+0.1V & 1.5V ± 0.075V JEDEC  Output Driver Impedance Control Standard Power Supply  Differential bidirectional data strobe  8 Internal memory banks (BA0- BA2)


    Original     		PDF NT5CB512M4GN NT5CB256M8GN NT5CC512M4GN NT5CC256M8GN 78Balls NT5CC256

    NT5CB256M8GN-CG

    Abstract: NT5CB256M8GN NT5CC512M4GN-CG NT5CC256M8GN-D NT5CB256M8GN- CG NT5CC256M8GN-DI
    Text: 2Gb DDR3 SDRAM G-Die NT5CB512M4GN / NT5CB256M8GN NT5CC512M4GN / NT5CC256M8GN Feature  VDD = VDDQ = 1.5V ± 0.075V JEDEC Standard  Programmable Burst Length: 4, 8 Power Supply  8n-bit prefetch architecture VDD = VDDQ = 1.35V -0.0675V/+0.1V  Output Driver Impedance Control


    Original     		PDF NT5CB512M4GN NT5CB256M8GN NT5CC512M4GN NT5CC256M8GN 78Balls NT5CB256M8GN-CG NT5CC512M4GN-CG NT5CC256M8GN-D NT5CB256M8GN- CG NT5CC256M8GN-DI