CP666
Abstract: CP640 TO-213AA CP664
Text: FETS Page 1 of 7 Next Home Package Device Type BVDSS Volts RDS on @ 0.5 ID Ohms ID Continuous Amps IDM Pulse Drain Current Amps TO-5 NES130/5 100 0.18 8 32 25 TO-5 NES230/5 200 0.40 5.5 22 25 TO-213AA/66 NSFJ1000 1000 4.2 3.0 10 70 TO-213AA/66 NSFJ120 100
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O-213AA/66
CP666
CP640
TO-213AA
CP664
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NSFY140
Abstract: No abstract text available
Text: NSFY140 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R d s o n • LOW DRIVE REQUIREMENT • DYNAMIC dv/dt RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) SYMBOL PARAMETERS / TEST CONDITIONS Drain-Source Voltage V ds
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NSFY140
O-257AA
t-045
14ching
XM46-1158
NSFY140
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Untitled
Abstract: No abstract text available
Text: Back to FETs NSFY140 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R d s o n • LOW DRIVE REQUIREMENT • DYNAMIC dv/dt RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) SYMBOL PARAMETERS / TEST CONDITIONS Drain-Source Voltage
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NSFY140
Drai105
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NSFY30509
Abstract: NSFY30613 NSFY30616 NSFY30724 NSFY30728 NSFY30824 NSFY30828 NSFY30940 NSFY30942 NSFY31040
Text: N EW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-257 ^ D S o n PACKAGE TO-257 Also available in Z Pack • • • DEVICE TYPE BVdss VOLTS Id @0.5 ID Qg AMPS OHMS nc Ciss Pf Pd WATTS NSFY31042 1000 3.0 4.2 55 950 100 NSFY31040 1000 3.3 4.0 55 950 100
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O-257
O-257
NSFY31042
NSFY31040
NSFY30942
NSFY30940
NSFY30824
NSFY30828
NSFY30724
NSFY30728
NSFY30509
NSFY30613
NSFY30616
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Untitled
Abstract: No abstract text available
Text: NEW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-257 PACKAGE DEVICE TYPE ^DS<on BV dss VOLTS Id AMPS @0.5 ID OHMS Qg nc Qss pf Pd WATTS NSFY31042 1000 3.0 4.2 55 950 100 NSFY31040 1000 3.3 4.0 55 950 100 NSFY30942 900 3.0 4.2 55 950 100 NSFY30940 900
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O-257
NSFY31042
NSFY31040
NSFY30942
NSFY30940
NSFY30824
NSFY30828
NSFY30724
NSFY30728
NSFY30613
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Untitled
Abstract: No abstract text available
Text: NEW ENGLAND SEMICONDUCTOR PO W E R M OSFETS N CHANNEL TO-25" R d S oii PACKAGE TO-257 Also available in Z Pack • • • DEVICE TYPE Qg nc Q ss Pd AMPS @0.5 ID OHM S Pf WATTS 1000 3.0 4.2 55 950 100 NSFY31040 1000 3.3 4.0 55 950 100 NSFY30942 900 3.0 4.2
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NSFY31042
NSFY31040
NSFY30942
NSFY30940
O-257
NSFY30824
NSFY30828
NSFY30724
NSFY30728
NSFY30613
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NSFY30509
Abstract: NSFY30613 NSFY30616 NSFY30724 NSFY30728 NSFY30824 NSFY30828 NSFY30940 NSFY30942 NSFY31040
Text: N EW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-257 PACKAGE TO-257 Also available in Z Pack • • • BV dss VOLTS Id AMPS ^DS{on @0.5 ID OHMS Qg NSFY31042 1000 3.0 4.2 NSFY31040 1000 3.3 NSFY30942 900 NSFY30940 DEVICE TYPE Qss Pf Pd WATTS 55 950
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O-257
O-257
NSFY31042
NSFY31040
NSFY30942
NSFY30940
NSFY30824
NSFY30828
NSFY30724
NSFY30728
NSFY30509
NSFY30613
NSFY30616
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Untitled
Abstract: No abstract text available
Text: N EW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-257 ^ D S o n PACKAGE TO-257 Also available in Z Pack • • • DEVICE TYPE BVdss VOLTS Id @0.5 ID Qg AMPS OHMS nc Ciss Pf Pd WATTS NSFY31042 1000 3.0 4.2 55 950 100 NSFY31040 1000 3.3 4.0 55 950 100
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O-257
NSFY31042
NSFY31040
NSFY30942
NSFY30940
NSFY30824
NSFY30828
NSFY30724
NSFY30728
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