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    B10 35CLG

    Abstract: b10 35CL 35CLG B1035CLG
    Text: NRVBD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package The NRVBD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal


    Original     		PDF NRVBD1035CTL NRVBD1035CTLD B10 35CLG b10 35CL 35CLG B1035CLG

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    Abstract: No abstract text available
    Text: NRVBD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package The NRVBD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal


    Original     		PDF NRVBD1035CTL NRVBD1035CTL NRVBD1035CTLD