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    NRVBD1035CTL Search Results

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    NRVBD1035CTL Price and Stock

    onsemi NRVBD1035CTLT4G

    DIODE ARRAY SCHOTTKY 35V 5A DPAK
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    Avnet Americas NRVBD1035CTLT4G Reel 2,500
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    NRVBD1035CTL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NRVBD1035CTLT4G On Semiconductor NRVBD1035 - DIODE 5 A, 35 V, SILICON, RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3, Rectifier Diode Original PDF

    NRVBD1035CTL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MBRD1035CTLG, MBRD1035CTLT4G, NRVBD1035CTLT4G, SBRD81035CTLT4G SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry


    Original     		PDF MBRD1035CTLG, MBRD1035CTLT4G, NRVBD1035CTLT4G, SBRD81035CTLT4G MBRD1035CTL MBRD1035CTL/D

    B10 35CLG

    Abstract: b10 35CL 35CLG B1035CLG
    Text: NRVBD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package The NRVBD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal


    Original     		PDF NRVBD1035CTL NRVBD1035CTLD B10 35CLG b10 35CL 35CLG B1035CLG

    Untitled

    Abstract: No abstract text available
    Text: NRVBD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package The NRVBD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal


    Original     		PDF NRVBD1035CTL NRVBD1035CTL NRVBD1035CTLD

    35CLG

    Abstract: B1035CLG b10 35CL B10 35CLG B1035CL b1035 SBRD81035CTLT4G DIODE MARKING CODE B10
    Text: MBRD1035CTLG, MBRD1035CTLT4G, NRVBD1035CTLT4G, SBRD81035CTLT4G SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry


    Original     		PDF MBRD1035CTLG, MBRD1035CTLT4G, NRVBD1035CTLT4G, SBRD81035CTLT4G MBRD1035CTL MBRD1035CTL/D 35CLG B1035CLG b10 35CL B10 35CLG B1035CL b1035 DIODE MARKING CODE B10