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    MACOM NPT1010P

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    NPT1010P Datasheets Context Search

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    Abstract: NPT1010 npt1010b 18121C105KAT2A ATC100B101J 6010LM 91292A012 ATC100B150J 12061C103KAT2A NITRON
    Text: NPT1010 Preliminary Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz


    Original     		PDF NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, ELXY npt1010b 18121C105KAT2A ATC100B101J 6010LM 91292A012 ATC100B150J 12061C103KAT2A NITRON

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    Abstract: No abstract text available
    Text: NPT1010 Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in


    Original     		PDF NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, NDS-023