Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1757A CPH6538 Bipolar Transistor http://onsemi.com 30V, 0.7A, Low VCE sat NPN Dual CPH6 Features • Small-sized package with two NPN transistors (30C02CH equivalency) contained in one package • VCEO=30V, IC=0.7A • Low Collector-to-Emitter Saturation Voltage VCE(sat)=85mV(typ.)@IC=0.2A
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ENA1757A
CPH6538
30C02CH
A1757-6/6
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1756A CPH6539 Bipolar Transistor http://onsemi.com 30V, 1.5A, Low VCE sat NPN Dual CPH6 Features • Small-sized package with two NPN transistors (CPH3215 equivalency) contained in one package • VCEO=30V, IC=1.5A • Low Collector-to-Emitter Saturation Voltage VCE(sat)=0.16V(typ.)@IC=0.75A
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ENA1756A
CPH6539
CPH3215
A1756-6/6
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2sc2837
Abstract: 2SA1186
Text: 2SC2837 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1186 VCB=150V 100max µA V IEBO VEB=5V 100max µA IC=25mA 150min V hFE 50min∗ VCE=4V, IC=3V A VCE(sat) IC=5A, IB=0.5A 2.0max V 100(Tc=25°C) W fT VCE=12V, IE=–1A 70typ MHz Tj 150 °C
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2SC2837
2SA1186)
MT-100
100max
150min
50min
70typ
60typ
2sc2837
2SA1186
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Untitled
Abstract: No abstract text available
Text: 2SC4130 Silicon NPN Epitaxial Planar Transistor High Voltage and High Speed Switchihg Transistor 2 PC 30(Tc=25°C) Tj V hFE VCE=4V, IC=3A 10 to 30 A VCE(sat) IC=3A, IB=0.6A 0.5max W VBE(sat) IC=3A, IB=0.6A 1.3max V 150 °C fT VCE=12V, IE=–0.5A 15typ MHz
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2SC4130
Pulse14)
O220F)
100max
400min
15typ
50typ
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1 High DC current gain. hFE = 1200 Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)
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L2SD2114KVLT1G
500mA
236AB)
OT-23
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Untitled
Abstract: No abstract text available
Text: 2SC4065 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1568 ±12 A IC VEB=6V 60max mA IC=25mA 60min V hFE VCE=1V, IC=6A 50min IC=6A, IB=1.3A 0.35max VECO=10A 2.5max V IB 3 A VCE(sat) PC 35(Tc=25°C) W VFEC Tj 150 °C fT VCE=12V, IE=–0.5A
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2SC4065
100max
60max
60min
50min
35max
24typ
180typ
2SA1568)
O220F)
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PDF
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2SC4466
Abstract: 2sa1693
Text: 2SC4466 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1693 IEBO VEBO 6 V V(BR)CEO IC 6 A hFE µA VEB=6V 10max µA V IC=50mA 80min VCE=4V, IC=2A 50min∗ a A VCE(sat) IC=2A, IB=0.2A 1.5max V 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ
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2SC4466
2SA1693)
10max
80min
50min
20typ
110typ
to100)
to140)
2SC4466
2sa1693
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series Series zFeatures S-L 2SD2114KVLT1G 1 High DC current gain. hFE = 1200 Typ.) 2) High emitter-base voltage. 3 VEBO =12V (Min.) 3) Low VCE (sat). 1 VCE (sat) = 0.18V (Typ.)
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L2SD2114KVLT1G
2SD2114KVLT1G
500mA
236AB)
AEC-Q101
S-L2SD2114KVLT1G
OT-23
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L2SD2114KVLT1
Abstract: L2SD2114KVLT1G L2SD2114KWLT1 L2SD2114KWLT1G
Text: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114K*LT1 zFeatures 1 High DC current gain. hFE = 1200 Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 3
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L2SD2114K
500mA
236AB)
OT-23
L2SD2114KVLT1
L2SD2114KVLT1G
L2SD2114KWLT1
L2SD2114KWLT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series Series zFeatures S-L2SD2114KVLT1G 1 High DC current gain. hFE = 1200 Typ.) 3 2) High emitter-base voltage. VEBO =12V (Min.) 1 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.)
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L2SD2114KVLT1G
S-L2SD2114KVLT1G
500mA
236AB)
AEC-Q101
S-L2SD2114KVLT1G
OT-23
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Untitled
Abstract: No abstract text available
Text: 2SB1697 Datasheet PNP -2A -12V Middle Power Transistor lOutline Parameter Value VCEO IC -12V -2A MPT3 Base Collector Emitter 2SB1697 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD2661 3) Low VCE(sat) VCE(sat)= -0.18V(Max.)
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2SB1697
SC-62)
OT-89>
2SD2661
-50mA)
R1102A
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SD2661 Datasheet NPN 2A 12V Middle Power Transistor lOutline Parameter Value VCEO IC 12V 2A MPT3 Base Collector Emitter 2SD2661 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1697 3) Low VCE(sat) VCE(sat)=0.18V(Max.)
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2SD2661
SC-62)
OT-89>
2SB1697
A/50mA)
R1102A
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 2SD2114 TRANSISTOR NPN SOT-23 FEATURES z High DC current gain. hFE = 1200 (Typ.) z High emitter-base voltage. VEBO =12V (Min.) z Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA)
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OT-23
2SD2114
OT-23
500mA
100MHz
500mA,
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2SC3519
Abstract: 2SC3519A transistor 2sc3519 2SA1386
Text: 2SC3519/3519A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1386/A VCB= V IEBO 15 A V(BR)CEO µA 100max VEB=5V 160min IC=25mA 180min V 4 A hFE VCE=4V, IC=5A 50min∗ PC 130(Tc=25°C) W VCE(sat) IC=5A, IB=0.5A 2.0max V Tj 150 °C fT VCE=12V, IE=–2A
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2SC3519/3519A
2SA1386/A)
2SC3519A
100max
160min
180min
50min
50typ
250typ
2SC3519
2SC3519A
transistor 2sc3519
2SA1386
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114K*LT1G zFeatures 1 High DC current gain. hFE = 1200 Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) We declare that the material of product compliance with RoHS requirements.
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L2SD2114K
500mA
236AB)
OT-23
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BBV transistor
Abstract: marking BBW marking BBV BBV marking
Text: 2SD2114 SOT-23 Transistor NPN SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features High DC current gain. hFE = 1200 (Typ.) High emitter-base voltage. VEBO =12V (Min.) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA) MARKING: BBV,BBW MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
2SD2114
OT-23
500mA
500mA,
100MHz
BBV transistor
marking BBW
marking BBV
BBV marking
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BBV marking
Abstract: 2SD2114
Text: 2SD2114 0.5 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z High DC current gain :hFE = 1200 Typ High emitter-base voltage. VEBO =12V (Min.) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA)
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2SD2114
500mA
OT-23
500mA,
100MHz
01-June-2005
BBV marking
2SD2114
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2SC3263
Abstract: 2SA1294 DSA0016507
Text: 2SC3263 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1294 Application : Audio and General Purpose Unit VCB=230V 100max µA VCEO 230 V IEBO VEB=5V 100max µA IC=25mA 230min V VCE=4V, IC=5A 50min∗ ø3.2±0.1 b IB 4 A VCE(sat) IC=5A, IB=0.5A
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2SC3263
2SA1294)
MT-100
100max
230min
50min
60typ
250typ
2SC3263
2SA1294
DSA0016507
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RF POWER TRANSISTOR NPN
Abstract: RF TRANSISTOR 2SC4537 high power npn UHF transistor
Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4537 DESCRIPTION •Low Noise NF = 1.6 dB TYP., @VCE = 5 V, IC = 5 mA, f = 900 MHz ·High Power Gain PG = 10 dB TYP. @VCE = 5 V, IC = 20 mA, f = 900 MHz APPLICATIONS ·Designed for VHF, UHF low noise amplifier.
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2SC4537
900MHz
RF POWER TRANSISTOR NPN
RF TRANSISTOR
2SC4537
high power npn UHF transistor
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vbe 12v, vce 600v NPN Transistor
Abstract: No abstract text available
Text: 2SC4907 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor mA VEB=10V 100max µA IC=25mA 500min V VCEO 500 V IEBO VEBO 10 V V(BR)CEO 6(Pulse12) A hFE VCE=4V, IC=2A 10to30 IB 2 A VCE(sat) IC=2A, IB=0.4A 0.5max PC
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2SC4907
Pulse12)
O220F)
100max
500min
10to30
45typ
vbe 12v, vce 600v NPN Transistor
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transistor
Abstract: high gain low voltage NPN transistor Collector 5v npn TRANSISTOR 15 w RF POWER TRANSISTOR NPN RF TRANSISTOR 1.5 GHZ "Small Signal Amplifiers" RF NPN POWER TRANSISTOR 3 GHZ NPN RF Transistor RF POWER TRANSISTOR NPN RF TRANSISTOR
Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3127 DESCRIPTION •Low Noise and High Gain NF = 2.2 dB TYP. @VCE = 5 V, IC = 5 mA, f = 900 MHz PG = 10.5 dB TYP. @VCE = 5 V, IC = 20 mA, f = 900 MHz APPLICATIONS ·Designed for use in low-noise and small signal amplifiers
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2SC3127
900MHz
transistor
high gain low voltage NPN transistor
Collector 5v npn TRANSISTOR
15 w RF POWER TRANSISTOR NPN
RF TRANSISTOR 1.5 GHZ
"Small Signal Amplifiers"
RF NPN POWER TRANSISTOR 3 GHZ
NPN RF Transistor
RF POWER TRANSISTOR NPN
RF TRANSISTOR
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2SC3890
Abstract: No abstract text available
Text: 2SC3890 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=3A 10 to 30 IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 30(Tc=25°C) W VBE(sat)
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2SC3890
Pulse14)
O220F)
100max
400min
10typ
50typ
2SC3890
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PDF
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vbe 12v, vce 600v NPN Transistor
Abstract: 2SC3831
Text: 2SC3831 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor 1max mA VCEO 500 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 500min V 10(Pulse20) A hFE VCE=4V, IC=5A 10 to 30 IB 4 A VCE(sat) IC=5A, IB=1A 0.5max
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2SC3831
Pulse20)
100max
500min
105typ
MT-100
vbe 12v, vce 600v NPN Transistor
2SC3831
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SC3680 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor Ratings Unit ICBO VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 3.5 A VCE(sat) IC=3A, IB=0.6A
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2SC3680
Pulse14)
100max
800min
105typ
MT-100
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