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    NPN TRANSISTORS MATV AMPLIFIERS NF 0.8 Search Results

    NPN TRANSISTORS MATV AMPLIFIERS NF 0.8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTORS MATV AMPLIFIERS NF 0.8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3F2 SMD Transistor

    Abstract: smd code marking rf ft sot23 bfr93a SMD TRANSISTOR MARKING fq TRANSISTOR SMD MARKING CODE dk transistor marking R2p SMD MARKING CODE TRANSISTOR 501 smd TRANSISTOR code marking VP sot23 bft93 die st 9335
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 File under discrete semiconductors, SC14 1997 Oct 29 Philips Semiconductors Product specification NPN 6 GHz wideband transistor


    Original     		PDF BFR93A BFT93. BFR93A MSB003 3F2 SMD Transistor smd code marking rf ft sot23 SMD TRANSISTOR MARKING fq TRANSISTOR SMD MARKING CODE dk transistor marking R2p SMD MARKING CODE TRANSISTOR 501 smd TRANSISTOR code marking VP sot23 bft93 die st 9335

    STR G 9656

    Abstract: BFG590W npn transistors MATV amplifiers NF 0.8
    Text: DATA SHEET book, halfpage M3D123 BFG590W; BFG590W/X NPN 5 GHz wideband transistors Product specification Supersedes data of August 1995 1998 Oct 15 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590W; BFG590W/X FEATURES DESCRIPTION


    Original     		PDF M3D123 BFG590W; BFG590W/X OT343N BFG590W SCA60 125104/00/03/pp12 STR G 9656 BFG590W npn transistors MATV amplifiers NF 0.8

    MHW707-2

    Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
    Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar


    Original     		PDF 714U/1 MHLW8000 MHW707-2 MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861

    MRF9742

    Abstract: MOTOROLA MASTER SELECTION GUIDE RF MHW591 MHW704 mhw593 MHW707-2 MHW592 MRF947T1 equivalent MHW707-1 MRF9282T1
    Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar


    Original     		PDF MHW1184L MHW1224L MHW1254L MHW1304L MRF9742 MOTOROLA MASTER SELECTION GUIDE RF MHW591 MHW704 mhw593 MHW707-2 MHW592 MRF947T1 equivalent MHW707-1 MRF9282T1

    BFG590W

    Abstract: 3094 npn
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG590W BFG590W/X; BFG590W/XR NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors August 1995 Philips Semiconductors Product specification BFG590W BFG590W/X; BFG590W/XR


    Original     		PDF BFG590W BFG590W/X; BFG590W/XR BFG590W/X SCD35 BFG590W 3094 npn

    BFG540W

    Abstract: DIN45004B tx 1569 transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors October 1994 Philips Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR


    Original     		PDF BFG540W BFG540W/X; BFG540W/XR BFG540W/X SCD35 BFG540W DIN45004B tx 1569 transistor

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 04 2000 May 23 NXP Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor FEATURES


    Original     		PDF BFG540W BFG540W/X; BFG540W/XR BFG540W/X R77/04/pp17

    transistor Bf 981

    Abstract: transistor Gigahertz feature of ic UM 66 philips MATV amplifiers RF Amplifier xr BFG540W DIN45004B MLC047 MEA973
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor Product specification Supersedes data of August 1995 File under Discrete Semiconductors, SC14 1997 Dec 04 Philips Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR


    Original     		PDF BFG540W BFG540W/X; BFG540W/XR BFG540W/X SCA56 transistor Bf 981 transistor Gigahertz feature of ic UM 66 philips MATV amplifiers RF Amplifier xr BFG540W DIN45004B MLC047 MEA973

    BFG540W

    Abstract: DIN45004B MLC051 DIN45004 transistor 2028
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 04 2000 May 23 NXP Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor


    Original     		PDF BFG540W BFG540W/X; BFG540W/XR BFG540W/X R77/04/pp17 BFG540W DIN45004B MLC051 DIN45004 transistor 2028

    SOT343N

    Abstract: BFG540W DIN45004B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 04 2000 May 23 Philips Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor


    Original     		PDF BFG540W BFG540W/X; BFG540W/XR BFG540W/X 613516/04/pp16 SOT343N BFG540W DIN45004B

    SD1303

    Abstract: thomson microwave transistor THOMSON-CSF MICROWAVE TRANSISTORS SD-1303
    Text: S G S —THOMSON _ _ _ Q l,C _ D • 0 0 0 0 3 .3 0 ^ J P T '" 5 t '" / S ' SOLID STATE MICROWAVE ^ SD1303 THOMSON-CSF COMPONENTS CORPORATION ^^ontgomwyvUle, PAJ8936 » 2 Î5 362-8500 ■ TWX 510-661-7299 , ' , - /, f .; 'j VHF/UHF COMMUNICATIONS TRANSISTOR


    OCR Scan     		PDF PAJ8936 SD1303 SD1303 thomson microwave transistor THOMSON-CSF MICROWAVE TRANSISTORS SD-1303

    transistor MRF 254

    Abstract: MRF561 Motorola transistors M 724 MRF560 724 motorola NPN Transistor R/High frequency MRF transistor case 317-01 317A-01 High frequency MRF transistor k 724
    Text: MOTOROLA SC -CXSTRS/R 34 F> DËJfa3fci7SS4 □D41Dflb b | _ T ' l t - t l MRF560 MRF561 MRF562 MRF563 MRFC592 The R F Line A d v a n c e Information NPN SILICON HIGH FREQUENCY TRANSISTORS The MRF560 series transistors use the same state-of-the art microwave transistor chip which features fine-line geometry, ionimplanted arsenic emitters and gold top metalization. These tran­


    OCR Scan     		PDF D41Dflb MRF560 MRF561 MRF562 MRF563 MRFC592 MRF560 MRF561 transistor MRF 254 Motorola transistors M 724 724 motorola NPN Transistor R/High frequency MRF transistor case 317-01 317A-01 High frequency MRF transistor k 724

    TRANSISTOR MARKING 3D 6PIN

    Abstract: bi 370 transistor BFM540 transistor 2028 transistor code t30
    Text: Philips Semiconductors Preliminary specification NPN wideband dual transistor BFM540 FEATURES PINNING • Small size PIN SYMBOL • Temperature and hFE matched 1 bi base 1 • Low noise and high gain 2 ei emitter 1 • Gold metallization ensures excellent reliability.


    OCR Scan     		PDF BFM540 OT363 OT363A OT363. 711005b TRANSISTOR MARKING 3D 6PIN bi 370 transistor BFM540 transistor 2028 transistor code t30

    m lc 945

    Abstract: transistor 9206 BFG590W marking code 3T3
    Text: Product specification P hilips Sem iconductors BFG590W BFG590W/X; BFG590W/XR NPN 5 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG590W T1 • High transition frequency BFG590W/X T2 • Gold metallization ensures


    OCR Scan     		PDF BFG590W BFG590W/X; BFG590W/XR BFG590W/X BFG590W/XR OT343 OT343R BFG590W m lc 945 transistor 9206 marking code 3T3

    2SC1365

    Abstract: NE741 2sc1252 74113 NE74100
    Text: NE74100 NE74113 NE74114 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 1.7 GHz The NE741 series of NPN epitaxial silicon transistors is designed for wide bandwidth UHF and VHF amplifiers. Its low


    OCR Scan     		PDF NE74100 NE74113 NE74114 NE741 E74100) NE74114 E74100, NE74100 2SC1365 2sc1252 74113

    STR G 9656

    Abstract: No abstract text available
    Text: Product specification Supersedes data of August 1995 Philips Sem iconductors 1998 Oct 15 PHILIPS Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG590W; BFG590W/X FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistor


    OCR Scan     		PDF BFG590W; BFG590W/X OT343N MBK523 BFG590W 125104/00/03/pp12 STR G 9656

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


    OCR Scan     		PDF PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239

    74113

    Abstract: NE741
    Text: NE74100 NE74113 NE74114 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION The NE741 series of NPN epitaxial silicon transistors is designed for wide bandwidth UHF and V H F amplifiers. Us low distortion and noise figures make it an excellent choice for


    OCR Scan     		PDF NE74100 NE74113 NE74114 NE741 NE74100) IL-S-19500 NE74100, NE74113, NE74114 74113

    BF547A

    Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
    Text: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS


    OCR Scan     		PDF LCD01 BF547A transistor bf 175 BFG65 equivalent BF547B BFG25AXD

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
    Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .


    OCR Scan     		PDF

    BFG540

    Abstract: transistor N43
    Text: Philips Semiconductors • bb53cl31 0D25011 253 « A P X Product specification N AMER PHILIPS/DISCRETE b7E D NPN 9 GHz wideband transistor £ BFG540; BFG540/X; BFG540/XR FEATURES PINNING PIN High power gain • Low noise figure • High transition frequency


    OCR Scan     		PDF bb53c 0D25011 BFG540; BFG540/X; BFG540/XR BFG540 MATV/CAT155 BFG540 transistor N43

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    Untitled

    Abstract: No abstract text available
    Text: LbSBTBl QQE5Q33 TIM Mi A P X Product specification N AMER PHILIPS/DISCRETE b7E » NPN 9 GHz wideband transistor BFG541 Philips Semiconductors FEATURES PINNING • High power gain PIN • Low noise figure 1 emitter DESCRIPTION • High transition frequency


    OCR Scan     		PDF QQE5Q33 BFG541 OT223.

    transistor c 6073

    Abstract: DD25DS BFG541 BF 331 TRANSISTORS transistor LC 945 lc 945 p transistor NPN TO 92 transistor abe 438 lc 945 transistor lc 945 p transistor NPN NR 4770 015
    Text: Philips Semiconductors M N LbS3T31 AMER 0025033 TIM PH ILIPS /D ISCR ETE HIAPX Product specification b7E T> NPN 9 GHz wideband transistor FEATURES BFG541 PINNING • High power gain PIN • Low noise figure 1 • High transition frequency 2 base • Gold metallization ensures


    OCR Scan     		PDF LbS3T31 E5D33 BFG541 OT223 OT2230 transistor c 6073 DD25DS BFG541 BF 331 TRANSISTORS transistor LC 945 lc 945 p transistor NPN TO 92 transistor abe 438 lc 945 transistor lc 945 p transistor NPN NR 4770 015