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    NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Search Results

    NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bc547 philips

    Abstract: NPN transistor BC547 as a diode Application Note tda5142 R27 transistor BC547 r17a transistor t13 mosfet current limiter BD438 equivalent BD680
    Text: Application Note I C s f o r M o t o r C o n t r o l TDA5142 output driver stages for supply voltages up to 30 V Report No: EIE/AN93013 R. Galema Product Concept & Application Laboratory Eindhoven, the Netherlands. Keywords Motor Control TDA5142 Date : 27 June 1995


    Original     		PDF TDA5142 EIE/AN93013 TDA5142 TDA514x sta43 BZX79C8V2) BYV10-40 bc547 philips NPN transistor BC547 as a diode Application Note tda5142 R27 transistor BC547 r17a transistor t13 mosfet current limiter BD438 equivalent BD680

    DRT2-ID32SLH

    Abstract: DRT2-ID32SLH-1 DRT2-ID32SL DRT2-ID16SL DRT2-ID16 gas solenoid valve OMRON PROXIMITY SWITCH AWG16 DRT2-OD32SLH-1 DRT2-OD16SLH
    Text: Screw-less Clamp Terminals with Transistors DRT2-@D16SL H (-1)/@D32SLH(-1) Reduced Wiring and Labor on Factory Sites with Screw-less Terminal Wiring • Screw-less structure eliminates tightening work. • Detachable terminal blocks for easier maintenance.


    Original     		PDF D16SL D32SLH AWG24 AWG16 DRT2-ID32SLH DRT2-ID32SLH-1 DRT2-ID32SL DRT2-ID16SL DRT2-ID16 gas solenoid valve OMRON PROXIMITY SWITCH AWG16 DRT2-OD32SLH-1 DRT2-OD16SLH

    SOT89-3D

    Abstract: microwave product SOT89 PNP marking GA SOT89 MARKING CODE 43 symbian BFN18 BFN19 C166 BFN16
    Text: BFN18 NPN Silicon High-Voltage Transistors Data Sheet Revision 1.0, 2010-10-13 RF & Protection Devices Edition 2010-10-13 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or


    Original     		PDF BFN18 OT89-PO OT89-FP BAW78D OT89-TP SOT89-3D microwave product SOT89 PNP marking GA SOT89 MARKING CODE 43 symbian BFN18 BFN19 C166 BFN16

    OPA03

    Abstract: OPA02 128 x 1 multiplexer hep silicon diode DMILL BGP02 calorimeter sensor CIRCUIT inverter grade SCR BGP01 digital SUN SENSOR cmos detector space radiation
    Text: Atmel is manufacturing the DMILL technology in its Nantes’ factory. Primarily developed to serve the High Energy Physics market, the technology offers versatile components suitable for any advanced mixed or pure digital conception. Taking advantage of SOI use and trench insulators, the SCR structures inherently present in


    Original     		PDF 4169B OPA03 OPA02 128 x 1 multiplexer hep silicon diode DMILL BGP02 calorimeter sensor CIRCUIT inverter grade SCR BGP01 digital SUN SENSOR cmos detector space radiation

    OPA03

    Abstract: DMILL 65260 npn nv SRAM cross reference SUN SENSOR BGP01 hep 50 hep silicon diode scr spice model SMALL ELECTRONICS PROJECTS
    Text: Atmel is manufacturing the DMILL technology in its Nantes’ factory. Primarily developed to serve the High Energy Physics market, the technology offers versatile components suitable for any advanced mixed or pure digital conception. Taking advantage of SOI use and trench insulators, the SCR structures inherently present in


    Original     		PDF

    BFG425W

    Abstract: amplifier 2606 BFG425 BFG21W STR 6507 texas rf power transistor transistor bf 203 PHILIPS TRANSISTORS
    Text: APPLICATION INFORMATION 2.4 GHz power amplifier with the BFG425W and the BFG21W Philips Semiconductors Application information 2.4 GHz power amplifier with the BFG425W and the BFG21W ABSTRACT • Description of the product The BFG425W is a double polysilicon wideband transistor and the BFG21W is a double polysilicon bipolar power


    Original     		PDF BFG425W BFG21W BFG21W 603508/01/pp12 amplifier 2606 BFG425 STR 6507 texas rf power transistor transistor bf 203 PHILIPS TRANSISTORS

    RX1214B130Y

    Abstract: RX1214B80W
    Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Suitable for short and medium


    Original     		PDF RX1214B80W; RX1214B130Y SCA53 127147/00/02/pp12 RX1214B130Y RX1214B80W

    Motorola transistor smd marking codes

    Abstract: STMicroelectronics smd marking code TRANSISTOR SMD MARKING CODE 1a SMD codes smd zener diode colour code smd transistor equivalent table maxim smd code Zener diode smd marking codes colour code diode zener SMD code
    Text: SMD Codes and Markings Written by TKB-4u.com SMD Codes and Markings Identifying the manufacturers' type number of an SMD device from the package code can be a difficult ta SMD devices are, by their very nature, too small to carry conventional semiconductor type


    Original     		PDF

    Luxeon K2 driver schematic

    Abstract: Luxeon 3w LED DATASHEET Luxeon driver schematic BJT 2222 Luxeon 3w Led driver 10W schematic design ideas AN48 FCX619 FMMT619
    Text: AN48 Getting more out of the ZXLD1350 - high output current Ray Liu, Systems Engineer, Zetex Semiconductors Introduction The ZXLD1350 is a continuous mode inductive step-down converter, designed for driving single or multiple series connected LEDs efficiently from a voltage source higher than the LED voltage.


    Original     		PDF ZXLD1350 350mA. 700mA D-81541 Luxeon K2 driver schematic Luxeon 3w LED DATASHEET Luxeon driver schematic BJT 2222 Luxeon 3w Led driver 10W schematic design ideas AN48 FCX619 FMMT619

    power amplifier circuit diagram with pcb layout

    Abstract: PH ON 4307 2.45 Ghz power amplifier 45 dbm 2.45 Ghz power amplifier BFG480W amplifier TRANSISTOR 12 GHZ power amplifier circuit diagram with pcb layout 2 Um 3562 BC817 2.45 Ghz power amplifier 30 db
    Text: APPLICATION INFORMATION 2.45 GHz power amplifier with the BFG480W Philips Semiconductors Application information 2.45 GHz power amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400 series. These transistors are


    Original     		PDF BFG480W BFG480W, BFG400 MGS765 MGS766 power amplifier circuit diagram with pcb layout PH ON 4307 2.45 Ghz power amplifier 45 dbm 2.45 Ghz power amplifier BFG480W amplifier TRANSISTOR 12 GHZ power amplifier circuit diagram with pcb layout 2 Um 3562 BC817 2.45 Ghz power amplifier 30 db

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y FEATURES


    Original     		PDF MX0912B100Y; MZ0912B100Y SCA53 127147/00/02/pp12

    MX0912B100Y

    Abstract: MZ0912B100Y philips capacitor 470
    Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y


    Original     		PDF MX0912B100Y; MZ0912B100Y SCA53 127147/00/02/pp12 MX0912B100Y MZ0912B100Y philips capacitor 470

    Untitled

    Abstract: No abstract text available
    Text: L6219 Stepper motor driver Features • Able to drive both windings of bipolar stepper motor ■ Output current up to 750 mA each winding ■ Wide voltage range: 10 V to 46 V ■ Half-step, full-step and microstepping mode ■ Built-in protection diodes ■


    Original     		PDF L6219 PDIP24 L6219

    ST L6219 application note

    Abstract: l6219 microstepping bipolar stepper motor circuit using L6219 power tube 67.5v E-L6219 E-L6219DS E-L6219DS013TR JESD97 L6219 PDIP24
    Text: L6219 Stepper motor driver Features • Able to drive both windings of bipolar stepper motor ■ Output current up to 750 mA each winding ■ Wide voltage range: 10 V to 46 V ■ Half-step, full-step and microstepping mode ■ Built-in protection diodes ■


    Original     		PDF L6219 PDIP24 L6219 ST L6219 application note l6219 microstepping bipolar stepper motor circuit using L6219 power tube 67.5v E-L6219 E-L6219DS E-L6219DS013TR JESD97 PDIP24

    7.5 stepper motor

    Abstract: E-L6219DS E-L6219DSATR L6219DS E-L6219DSA JESD97 L6219DSA SO24
    Text: L6219DSA Stepper motor driver for automotive range Features • Able to drive both windings of bipolar stepper motor ■ Output current up to 750 mA each winding ■ Wide voltage range: 10 V to 46 V ■ Half-step, full-step and microstepping mode ■ Built-in protection diodes


    Original     		PDF L6219DSA L6219DSA 7.5 stepper motor E-L6219DS E-L6219DSATR L6219DS E-L6219DSA JESD97 SO24

    740C3

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y


    Original     		PDF MX0912B100Y; MZ0912B100Y MX0912B100Y OT439 OT443 740C3

    E-L6219R

    Abstract: E-L6219R013TR JESD97 L6219R L6219R013TR SO24 DAC100
    Text: L6219R Stepper motor driver Features • Able to drive both windings of bipolar stepper motor ■ Output current up to 500 mA each winding ■ Wide voltage range 4.5 V to 10 V ■ Half-step, full-step and microstepping mode ■ Built-in protection diodes ■


    Original     		PDF L6219R SO-24 L6219R E-L6219R E-L6219R013TR JESD97 L6219R013TR SO24 DAC100

    Untitled

    Abstract: No abstract text available
    Text: L6219R Stepper motor driver Features • Able to drive both windings of bipolar stepper motor ■ Output current up to 500 mA each winding ■ Wide voltage range 4.5 V to 10 V ■ Half-step, full-step and microstepping mode ■ Built-in protection diodes ■


    Original     		PDF L6219R SO-24 L6219R

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y


    Original     		PDF MX0912B100Y; MZ0912B100Y

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Suitable for short and medium


    Original     		PDF RX1214B80W; RX1214B130Y OT439

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y FEATURES PINNING • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR


    OCR Scan     		PDF MX0912B100Y OT439A 100A101KP50X MX0912B100Y; MZ0912B100Y MGK067

    RX1214

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistors RX1214B80W; RX1214B130Y FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor Microwave performance up to Tmb = 25 °C in a common-base class C


    OCR Scan     		PDF RX1214B80W; RX1214B130Y RX1214B80W MGA258 RX1214

    erie feedthrough capacitors

    Abstract: MX0912B100Y MZ0912B100Y SC15
    Text: Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y FEA TUR ES PIN NING • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high V SW R


    OCR Scan     		PDF MX0912B100Y; MZ0912B100Y MX0912B100Y OT439A OT439A. OT443A. erie feedthrough capacitors MZ0912B100Y SC15

    MBC725

    Abstract: RX1214B130Y RX1214B80W SC15
    Text: DISCRETE SEMICONDUCTORS RX1214B80W; RX1214B130Y NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer


    OCR Scan     		PDF RX1214B80W; RX1214B130Y MBC725 RX1214B130Y RX1214B80W SC15