NTE352
Abstract: w65 transistor RF POWER TRANSISTOR NPN
Text: NTE352 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial FM equipment
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NTE352
NTE352
175MHz.
175MHz
175MHz
175MHz,
w65 transistor
RF POWER TRANSISTOR NPN
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NTE367
Abstract: 45W UHF
Text: NTE367 Silicon NPN Transistor RF Power Amplifier PO = 45W @ 512MHz Description: The NTE367 is a silicon NPN RF power transistor in a W65 type package designed for 12.5V UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz.
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NTE367
512MHz
NTE367
512MHz.
470MHz
470MHz
45W UHF
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nte352
Abstract: w65 transistor
Text: NTE352 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE352 is a 12.5V Class C epitaxial silicon NPN transistor in a W65 type package designed primarily for VHF, FM communications. Diffused emitter resistors provide high VSWR capability under rated operating conditions. Internal impedance matching ensures optimum power gain and
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NTE352
NTE352
136-175MHz
175MHz
175MHz,
w65 transistor
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TRANSISTOR SMD MARKING CODE w6
Abstract: SMD transistor code P npn transistor w6 NXP TRANSISTOR SMD MARKING CODE SOT23 PBHV8115T PBHV9115T TRANSISTOR SMD MARKING CODE 26 MARKING CODE SMD IC
Text: PBHV8115T 150 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 02 — 9 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
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PBHV8115T
O-236AB)
PBHV9115T.
AEC-Q101
PBHV8115T
TRANSISTOR SMD MARKING CODE w6
SMD transistor code P
npn transistor w6
NXP TRANSISTOR SMD MARKING CODE SOT23
PBHV9115T
TRANSISTOR SMD MARKING CODE 26
MARKING CODE SMD IC
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TRANSISTOR SMD MARKING CODE w6
Abstract: npn transistor w6 PBHV8115T PBHV9115T
Text: PBHV8115T 150 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 4 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBHV8115T
O-236AB)
PBHV9115T.
AEC-Q101
PBHV8115T
TRANSISTOR SMD MARKING CODE w6
npn transistor w6
PBHV9115T
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silicon npn planar rf transistor sot 143
Abstract: BFP67W
Text: BFP67W Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies.
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BFP67W
D-74025
07-Nov-97
silicon npn planar rf transistor sot 143
BFP67W
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Untitled
Abstract: No abstract text available
Text: RN4987FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4987FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Q2 C R1 R1 R2 B 3 4
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RN4987FS
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Untitled
Abstract: No abstract text available
Text: RN4987FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4987FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C R1 R1 5 3 4 (E1) (B1) (C2) (E2) (B2)
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RN4987FS
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Untitled
Abstract: No abstract text available
Text: RN4987FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4987FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C 5 3 4 1. EMITTER1 2. BASE1 3. COLLECTOR2
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RN4987FS
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RN4987FS
Abstract: No abstract text available
Text: RN4987FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4987FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C R1 R1 5 3 4 (E1) (B1) (C2) (E2) (B2)
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RN4987FS
RN4987FS
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Untitled
Abstract: No abstract text available
Text: RN4987FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4987FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C R1 5 3 4 1. EMITTER1 2. BASE1 3. COLLECTOR2
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RN4987FS
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RN4987FS
Abstract: No abstract text available
Text: RN4987FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4987FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C R1 5 3 4 1. EMITTER1 2. BASE1 3. COLLECTOR2
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RN4987FS
RN4987FS
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BFP67W
Abstract: Transistor C 1279
Text: BFP67/BFP67R/BFP67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.
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BFP67/BFP67R/BFP67W
BFP67
BFP67R
BFP67W
D-74025
20-Jan-99
Transistor C 1279
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BFP67
Abstract: BFP67R BFP67W "Small Signal Amplifiers"
Text: BFP67/BFP67R/BFP67W Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.
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BFP67/BFP67R/BFP67W
BFP67R
BFP67
BFP67W
D-74025
20-Jan-99
"Small Signal Amplifiers"
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DSA0037427
Abstract: pnp array SEMD13 npn transistor w6 IC-101
Text: SEMD13 NPN/PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit 4 • Two galvanic internal isolated NPN/PNP 5 3 Transistors in one package 6 2 • Built in bias resistor (R1=4.7kΩ, R2 =47kΩ)
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SEMD13
OT666
EHA07176
OT666
Feb-26-2004
DSA0037427
pnp array
SEMD13
npn transistor w6
IC-101
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marking 557 SOT143
Abstract: No abstract text available
Text: Not for new design, this product will be obsoleted soon BFP67 / BFP67R / BFP67W Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • Small feedback capacitance Low noise figure High transition frequency Lead Pb -free component
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BFP67
BFP67R
BFP67W
2002/95/EC
2002/96/EC
OT-143
OT-143R
OT-343
OT-143
marking 557 SOT143
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Untitled
Abstract: No abstract text available
Text: BFP67 / BFP67R / BFP67W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features SOT-143 • Small feedback capacitance • Low noise figure • High transition frequency 3 4 2 1 Applications Low noise small signal amplifiers up to 2 GHz. This
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BFP67
BFP67R
BFP67W
OT-143
OT-143R
OT-143
OT-143R
OT-343
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marking 557 SOT143
Abstract: No abstract text available
Text: BFP67 / BFP67R / BFP67W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features SOT-143 • Small feedback capacitance • Low noise figure • High transition frequency 3 4 2 1 Applications Low noise small signal amplifiers up to 2 GHz. This
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BFP67
BFP67R
BFP67W
OT-143
OT-143R
OT-143
OT-143R
BFPW67
marking 557 SOT143
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0746
Abstract: BFPW67 Transistor C 1279 BFP67W SOT-223 marking 717
Text: BFP67 / BFP67R / BFP67W Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • Small feedback capacitance Low noise figure High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
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BFP67
BFP67R
BFP67W
2002/95/EC
2002/96/EC
OT-143
OT-143R
OT-343
OT-143
0746
BFPW67
Transistor C 1279
BFP67W
SOT-223 marking 717
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BFP67W
Abstract: BFP67 BFP67R SOT-143 MARKING 557
Text: BFP67 / BFP67R / BFP67W Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • Small feedback capacitance Low noise figure High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
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BFP67
BFP67R
BFP67W
2002/95/EC
2002/96/EC
OT-143
OT-143R
OT-343
BFP67
OT-143
BFP67W
SOT-143 MARKING 557
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cd 1191 cb
Abstract: CD 1691 CB
Text: wm m t BFP67/BFP67R/BFP67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain per
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BFP67/BFP67R/BFP67W
BFP67
BFP67R
BFP67W
20-Jan-99
cd 1191 cb
CD 1691 CB
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2SC4247
Abstract: No abstract text available
Text: TOSHIBA 2SC4247 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4247 Unit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON COLLECTOR • 2.1 ±0.1 Transition Frequency is High and Dependent on Current Excellently. MAXIMUM RATINGS (Ta = 25°C)
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2SC4247
SC-70
2SC4247
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npn transistor w6
Abstract: No abstract text available
Text: h -y > y 7. $ /Transistors UMW6N FMW6 t i UMW6N/FMW6 T /K i ï Epitaxial Planar NPN Silicon Transistor ¡ÜJSi&*ii*iÄI/RF Amplifier • 1 K /\‘ 7 - J I / K h>v > v : * 2 / D u a l Mini-Mold Transistor ^ - v T \H £E I/D im en sio n s Unit : mm) FMW6 UMW6N
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1500M
npn transistor w6
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CD 1691 CB
Abstract: TELEFUNKEN O 670 VL sl2 357
Text: Temic BFP67W Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. M Applications Low noise small signal amplifiers up to 2 GHz. This tran sistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies.
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BFP67W
D-74025
07-Nov-97
CD 1691 CB
TELEFUNKEN O 670 VL
sl2 357
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