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    NPN TRANSISTOR VCEO 80V 100V DC CURRENT GAIN 100 Search Results

    NPN TRANSISTOR VCEO 80V 100V DC CURRENT GAIN 100 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR VCEO 80V 100V DC CURRENT GAIN 100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BDX67

    Abstract: npn 120v 10a transistor transistor bdx67 BDX66 NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON BDX67C BDX67B darlington power transistor 10a transistor bdx66
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 1000 Min @ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier


    Original     		PDF BDX66/A/B/C BDX67 BDX67C BDX67A BDX67B BDX67 npn 120v 10a transistor transistor bdx67 BDX66 NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON BDX67C BDX67B darlington power transistor 10a transistor bdx66

    NPN Transistor VCEO 80V 100V

    Abstract: KSE182 NPN Transistor VCEO 80V 100V hfe 100 KSE180 KSE181 80 V NPN epitaxial silicon transistor NPN Transistor VCEO 80V 100V DC Current gain 100 transistor 182 kse18
    Text: KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 60 V : KSE181 80 V : KSE182 100 V : KSE180 40 V : KSE181


    Original     		PDF KSE180/181/182 O-126 KSE181 KSE182 KSE180 100mA 500mA NPN Transistor VCEO 80V 100V KSE182 NPN Transistor VCEO 80V 100V hfe 100 KSE180 KSE181 80 V NPN epitaxial silicon transistor NPN Transistor VCEO 80V 100V DC Current gain 100 transistor 182 kse18

    2N6718

    Abstract: 2n6717 2N6716 NPN Transistor 1A 100V 2n6718 equivalent npn transistor 100v min NPN Transistor VCEO 80V 100V hfe 100 100v 1a transistor VCE 100V transistor transistor 2n6718
    Text: 2N6716 / 2N6717 / 2N6718 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES   TO-92 High Voltage：VCEO = 100V Gain of 20 @ IC = 0.5A G H Emitter


    Original     		PDF 2N6716 2N6717 2N6718 2N6716 2N6717 250mA, 2N6718 NPN Transistor 1A 100V 2n6718 equivalent npn transistor 100v min NPN Transistor VCEO 80V 100V hfe 100 100v 1a transistor VCE 100V transistor transistor 2n6718

    BDT93

    Abstract: BDT95 NPN Transistor VCEO 80V 100V Audio Output Transistor Amplifier BDT91 NPN Transistor VCEO 80V 100V DC Current gain 100 ftb200
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDT91/93/95 DESCRIPTION •DC Current Gain- hFE= 20~200@ IC= 4A ·Collector-Emitter Sustaining Voltage: VCEO SUS = 60V(Min)- BDT91; 80V(Min)- BDT93; 100V(Min)- BDT95 ·Complement to Type BDT92/94/96


    Original     		PDF BDT91/93/95 BDT91; BDT93; BDT95 BDT92/94/96 BDT91 BDT93 BDT93 BDT95 NPN Transistor VCEO 80V 100V Audio Output Transistor Amplifier BDT91 NPN Transistor VCEO 80V 100V DC Current gain 100 ftb200

    TIP112

    Abstract: TIP110 TIP111 NPN Transistor VCEO 80V 100V TIP110 transistor NPN Transistor TO220 VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON TIP112 transistor NPN Transistor VCEO 80V 100V DC Current gain 100 Silicon NPN Darlington transistor TIP110
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP110/111/112 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 Complementary to TIP115/116/117


    Original     		PDF TIP110/111/112 O-220 TIP115/116/117 TIP111 TIP112 TIP110 TIP112 TIP110 TIP111 NPN Transistor VCEO 80V 100V TIP110 transistor NPN Transistor TO220 VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON TIP112 transistor NPN Transistor VCEO 80V 100V DC Current gain 100 Silicon NPN Darlington transistor TIP110

    TIP102

    Abstract: NPN Transistor VCEO 80V 100V DARLINGTON IC 8A TIP102 Darlington transistor NPN Transistor TO220 VCEO 80V 100V NPN Transistor 8A TIP100 TIP101 NPN Transistor VCEO 80V 100V DARLINGTON TO 106 transistor base collector emitter
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE


    Original     		PDF TIP100/101/102 O-220 TIP105/106/107 TIP101 TIP102 TIP100 TIP102 NPN Transistor VCEO 80V 100V DARLINGTON IC 8A TIP102 Darlington transistor NPN Transistor TO220 VCEO 80V 100V NPN Transistor 8A TIP100 TIP101 NPN Transistor VCEO 80V 100V DARLINGTON TO 106 transistor base collector emitter

    NPN Transistor VCEO 80V 100V

    Abstract: BSV64
    Text: BSV64 MECHANICAL DATA Dimensions in mm inches SILICON NPN PLANAR TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. • VCBO = 100V • VCEO = 60V


    Original     		PDF BSV64 35MHz NPN Transistor VCEO 80V 100V BSV64

    Untitled

    Abstract: No abstract text available
    Text: BSV64 MECHANICAL DATA Dimensions in mm inches SILICON NPN PLANAR TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. • VCBO = 100V • VCEO = 60V


    Original     		PDF BSV64 35MHz

    NTE72

    Abstract: No abstract text available
    Text: NTE72 Silicon NPN Transistor High Current Amp, Fast Switch Features: D High Power: 100W @ TC = +50°C, VCE = 40V D High Voltage: VCEO = 80V Min D High Current Saturation Voltage: VCE sat = 1.5V @ 10A D High Frequency: fT = 30MHz Min D Isolated Collector Package, No Isolating hardware Required


    Original     		PDF NTE72 30MHz 20MHz NTE72

    2N2223A

    Abstract: TO77 package
    Text: SEME 2N2223A LAB MECHANICAL DATA Dimensions in mm inches DUAL NPN TRANSISTOR IN TO77 HERMETIC PACKAGE 8.51 (0.335) 9.40 (0.370) 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) FEATURES 12.7 (0.500) Min. 1.02 (0.040) Max. • Silicon Planar Epitaxial NPN Transistor


    Original     		PDF 2N2223A 300ms, 2N2223A-JQR-B" 2N2223A-JQR-B 5/10m 50MHz 2N2223A TO77 package

    NPN Transistor TO220 VCEO 80V 100V

    Abstract: TIP29 tip29c TIP29A NPN Transistor VCEO 80V 100V tip29 npn TIP29B NPN Transistor VCEO 80V 100V DC Current gain 100 Transistor tip29 TIP-29
    Text: TIP29/TIP29A/TIP29B/TIP29C NPN Epitaxial Silicon Transistor Features • Complementary to TIP30/TIP30A/TIP30B/TIP30C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF TIP29/TIP29A/TIP29B/TIP29C TIP30/TIP30A/TIP30B/TIP30C TIP29 TIP29A TIP29B TIP29C NPN Transistor TO220 VCEO 80V 100V TIP29 tip29c TIP29A NPN Transistor VCEO 80V 100V tip29 npn TIP29B NPN Transistor VCEO 80V 100V DC Current gain 100 Transistor tip29 TIP-29

    TIP31

    Abstract: TIP31C transistor tip31 NPN Transistor TO220 VCEO 80V 100V TIP31 NPN Transistor TIP31A NPN Transistor VCEO 80V 100V 3a npn to220 transistor TIP31B Silicon NPN Transistor TIP31
    Text: TIP31/TIP31A/TIP31B/TIP31C NPN Epitaxial Silicon Transistor Features • Complementary to TIP32/TIP32A/TIP32B/TIP32C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF TIP31/TIP31A/TIP31B/TIP31C TIP32/TIP32A/TIP32B/TIP32C TIP31 TIP31A TIP31B TIP31C TIP31 TIP31C transistor tip31 NPN Transistor TO220 VCEO 80V 100V TIP31 NPN Transistor TIP31A NPN Transistor VCEO 80V 100V 3a npn to220 transistor TIP31B Silicon NPN Transistor TIP31

    TIP117

    Abstract: TIP116 TIP115 TIP-115 NPN Transistor TO220 VCEO 80V 100V PNP NPN Transistor VCEO 80V 100V Ic 2A tip117 TRANSISTOR equivalent NPN Transistor VCEO 80V 100V DARLINGTON 2A 80v complementary transistor tip115 transistor
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP115/116/117 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, IC= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 Complementary to TIP110/111/112


    Original     		PDF TIP115/116/117 O-220 TIP110/111/112 TIP116 TIP117 TIP115 -100V, TIP117 TIP116 TIP115 TIP-115 NPN Transistor TO220 VCEO 80V 100V PNP NPN Transistor VCEO 80V 100V Ic 2A tip117 TRANSISTOR equivalent NPN Transistor VCEO 80V 100V DARLINGTON 2A 80v complementary transistor tip115 transistor

    TIP41

    Abstract: tip41c TRANSISTOR TC 100 TIP41C EQUIVALENT NPN Transistor VCEO 80V 100V hfe 100 TRANSISTOR tip41c TIP41A TIP41B NPN Transistor TO220 VCEO 80V 100V NPN Transistor VCEO 80V 100V
    Text: TIP41/TIP41A/TIP41B/TIP41C NPN Epitaxial Silicon Transistor Features • Complementary to TIP42/TIP42A/TIP42B/TIP42C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Emitter Voltage: TIP41


    Original     		PDF TIP41/TIP41A/TIP41B/TIP41C TIP42/TIP42A/TIP42B/TIP42C TIP41 TIP41A TIP41B TIP41C TIP41 tip41c TRANSISTOR TC 100 TIP41C EQUIVALENT NPN Transistor VCEO 80V 100V hfe 100 TRANSISTOR tip41c TIP41A TIP41B NPN Transistor TO220 VCEO 80V 100V NPN Transistor VCEO 80V 100V

    NTE56

    Abstract: No abstract text available
    Text: NTE56 Silicon NPN Transistor High Gain Switch and Pass Regulator Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V


    Original     		PDF NTE56 NTE56

    2sd692

    Abstract: hfe 2500 NPN Transistor VCEO 80V 100V 2SD69
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor DESCRIPTION •Built-in Base-Emitter Shunt Resistors ·High DC current gainhFE = 1000 Min @ IC =1 Adc ·Collector-Emitter Breakdown VoltageV(BR)CEO= 80V(Min) ·Wide Area of Safe Operation


    Original     		PDF 2SD692 2sd692 hfe 2500 NPN Transistor VCEO 80V 100V 2SD69

    pin diagram of ic 4066

    Abstract: tip131 TIP137 Darlington transistor TIP132 TIP136 TIP137 NPN Transistor TO220 VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON darlington complementary
    Text: TIP131, 132, 136, 137 Darlington Transistors Features: • Collector-Emitter sustaining voltageVCEO sus = 80V (Minimum) - TIP131, TIP136 = 100V (Minimum) - TIP132, TIP137 • Collector-Emitter saturation voltage VCE(sat) = 2.0V (Maximum) at IC = 4.0A • Monolithic construction with Built-in Base-Emitter shunt resistor.


    Original     		PDF TIP131, TIP136 TIP132, TIP137 TIP131 TIP132 pin diagram of ic 4066 tip131 TIP137 Darlington transistor TIP132 TIP136 TIP137 NPN Transistor TO220 VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON darlington complementary

    BCP1898

    Abstract: No abstract text available
    Text: BCP1898 1A, 100V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-89 The BCP1898 is designed for switching applications. MARKING 4 1 189 8 2 3 A Date Code E


    Original     		PDF BCP1898 OT-89 BCP1898 BCP1898-P BCP1898-Q BCP1898-R 10-Dec-2010 500mA 500mA,

    NPN Transistor VCEO 80V 100V

    Abstract: BUX77X
    Text: BUX77X MECHANICAL DATA Dimensions in mm 6.35 0.250 8.64 (0.340) 3.68 (0.145) rad. max. Bipolar NPN Device VCEO = 80V 2 IC = 5A 11.94 (0.470) 12.70 (0.500) 1 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 4.08(0.161) rad. 14.48 (0.570) 14.99 (0.590) 24.13 (0.95)


    Original     		PDF BUX77X O213AA) 20MHz NPN Transistor VCEO 80V 100V BUX77X

    NPN Transistor 8A

    Abstract: TIP102 Darlington transistor
    Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP105/106/107


    Original     		PDF TIP100/101/102 O-220 TIP105/106/107 TIP100 TIP101 TIP102 NPN Transistor 8A TIP102 Darlington transistor

    Untitled

    Abstract: No abstract text available
    Text: J. Cx , One. t/ TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N2223A MECHANICAL DATA Dimensions in mm (inches) DUAL NPN TRANSISTOR IN TO77 HERMETIC PACKAGE 9 5 1 (0,335) 940(0.370) 7 75 (0 305) 8.51 (0.335) FEATURES 1 02 (0 040)


    Original     		PDF 2N2223A 20MHz 100uA -55to 300ns,

    T1P110

    Abstract: transistor tip 107 T1P111 T1P105 darlington npn tip 102 np112 VCS-60V T1P115 L08M darlington tip 102
    Text: ¡ S A M S UN G S E M I C ON D U CT OR INC 14E D 1 7^1,4142 000772a fl PNP EPriAXIAT. SILICON DARLINGTON TRANSISTOR TIP105/106/107 r HIGH DC CURRENT GAIN ‘ MIN hFE=1000 @ V c e = —4 V, lc = -3 A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER


    OCR Scan     		PDF TIP105/106/107 000772a TIP100/101/102 TIP105 TIP106 TIP107 T1P105 TIP115: T1P110 transistor tip 107 T1P111 T1P105 darlington npn tip 102 np112 VCS-60V T1P115 L08M darlington tip 102

    je180

    Abstract: MJE181 MJE170 MJE172 MJE180 MJE182 MJE200 MJE210
    Text: SAMSUNG SEMICONDUCTOR INC MJE172 D | 7^4145 0007^3 4 | PNP EPITAXIAL SILICON TRANSISTOR T -3 3-1 7 LOW FREQUENCY AMPLIFIER LOW CURRENT, HIGH SPEED SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage j CoHector-Emitter Voltage


    OCR Scan     		PDF MJE172 -65M50 O-126 MJE170 MJE200 je180 MJE181 MJE180 MJE182 MJE210

    141F

    Abstract: 142F
    Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIP140F/141F/142F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE * -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Com plem ent to T IP 145F/146F/147F ABSOLUTE MAXIMUM RATINGS C haracteristic


    OCR Scan     		PDF TIP140F/141F/142F 145F/146F/147F 141F 142F