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    NPN TRANSISTOR 60 VOLT Search Results

    NPN TRANSISTOR 60 VOLT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR 60 VOLT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BCP55

    Abstract: BCX55 PBSS4160T PBSS5160T
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS4160T 60 V, 1 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Jun 24 2004 May 12 NXP Semiconductors Product data sheet 60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160T


    Original     		M3D088 PBSS4160T BCP55 BCX55. R75/02/pp10 BCX55 PBSS4160T PBSS5160T PDF

    BU806 MOTOROLA

    Abstract: BU806 motorola darlington power transistor NT 407 F TRANSISTOR 221A-06 transistor j 127
    Text: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal


    Original     		BU806/D* BU806/D BU806 MOTOROLA BU806 motorola darlington power transistor NT 407 F TRANSISTOR 221A-06 transistor j 127 PDF

    BU806

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal


    Original     		220AB BU806 PDF

    TRANSISTOR SMD MARKING CODE 1 KW

    Abstract: No abstract text available
    Text: 2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V, 0.03 A Datasheet - production data Features 60 V IC max 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65°C to +200°C • Hi-Rel NPN dual matched bipolar transistor LCC-6 TO-77


    Original     		2N2920AHR 2N2920AHR DocID15383 TRANSISTOR SMD MARKING CODE 1 KW PDF

    *2N2920* LCC

    Abstract: soc2920ahrb
    Text: 2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V, 0.03 A Datasheet — production data Features BVCEO 60 V IC max 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65°C to +200°C • Hi-Rel NPN dual matched bipolar transistor ■


    Original     		2N2920AHR 2N2920AHR *2N2920* LCC soc2920ahrb PDF

    soc2920ahrb

    Abstract: 2N2920AHR marking code SMD ic N1 smd transistor st smd diode marking code all ic datasheet in one pdf file NV SMD TRANSISTOR smd diode order marking code stmicroelectronics transistor marking N1 TRANSISTOR SMD MARKING CODES
    Text: 2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V - 0.03 A Features BVCEO 60 V IC max 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65°C to +200°C • Hi-Rel NPN dual matched bipolar transistor ■ Linear gain characteristics ■


    Original     		2N2920AHR 2N2920AHR soc2920ahrb marking code SMD ic N1 smd transistor st smd diode marking code all ic datasheet in one pdf file NV SMD TRANSISTOR smd diode order marking code stmicroelectronics transistor marking N1 TRANSISTOR SMD MARKING CODES PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal


    OCR Scan     		BU806/D BU806 -220A 21A-06 O-220AB PDF

    npn transistor footprint

    Abstract: No abstract text available
    Text: PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS4260PAN DFN2020-6 OT1118) PBSS4260PANP. PBSS5260PAP. AEC-Q101 npn transistor footprint PDF

    MARKING CODE SMD IC 531

    Abstract: TRANSISTOR SMD MARKING CODE 1 KW
    Text: 2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V, 0.03 A Datasheet - production data Features 60 V IC max 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65°C to +200°C • Hi-Rel NPN dual matched bipolar transistor LCC-6 TO-77


    Original     		2N2920AHR 2N2920AHR DocID15383 MARKING CODE SMD IC 531 TRANSISTOR SMD MARKING CODE 1 KW PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V - 0.03 A Features BVCEO 60 V IC max 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65°C to +200°C • Hi-Rel NPN dual matched bipolar transistor ■ Linear gain characteristics ■


    Original     		2N2920AHR 2N2920AHR PDF

    bu806 REPLACEMENT

    Abstract: k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s.


    Original     		220AB BU806 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C bu806 REPLACEMENT k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326 PDF

    transistor NPN 30 watt

    Abstract: transistor Ic 1A NPN FHFCX491 npn transistor 60 volt 5v power transistor 60V transistor npn 1a TRANSISTOR NPN 60V Collector 5v npn TRANSISTOR
    Text: NPN ᒦ৖ൈहࡍྯ૵਌ NPN Medium Power Transistor NPN Medium Power Transistor DESCRIPTION & FEATURES 60 Volt VCEO 1A Amp continuous current FHFCX491 NPN ᒦ৖ൈहࡍྯ૵਌ 概述及特點 SOT-89 Ptot =1 Watt PIN ASSIGNMENT 引腳說明 PIN NAME


    Original     		FHFCX491 OT-89 OT-89 FHFCX491 500mA 100mA 100mA 100MHZ transistor NPN 30 watt transistor Ic 1A NPN npn transistor 60 volt 5v power transistor 60V transistor npn 1a TRANSISTOR NPN 60V Collector 5v npn TRANSISTOR PDF

    transistor st 431

    Abstract: No abstract text available
    Text: 2ST3360 Hi-Rel NPN and PNP bipolar transistor 60 V, 0.8 A Datasheet — production data Features Polarity BVCEO IC max hFE(1) NPN 60 V 0.8 A 160 PNP -60 V - 0.8 A 160 ) s ( ct u d o 1. @ Ic = 1 A and VCE = 2 V. • Very low collector-emitter saturation voltage


    Original     		2ST3360 2ST3360 transistor st 431 PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort High−Power NPN Silicon Transistor 2N5302 . . . for use in power amplifier and switching circuits applications. • Low Collector−Emitter Saturation Voltage − 30 AMPERE POWER TRANSISTOR NPN SILICON 60 VOLTS 200 WATTS VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc


    Original     		2N5302 PDF

    PBSS4041SN

    Abstract: No abstract text available
    Text: PBSS4041SN 60 V, 6.7 A NPN/NPN low VCEsat BISS transistor Rev. 2 — 18 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS4041SN OT96-1 PBSS4041SP PBSS4041SPN PBSS4041SN PDF

    Untitled

    Abstract: No abstract text available
    Text: PBSS4041SN 60 V, 6.7 A NPN/NPN low VCEsat BISS transistor Rev. 2 — 18 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS4041SN OT96-1 PBSS4041SP PBSS4041SPN PDF

    transistor smd marking 431.k

    Abstract: transistor smd code marking 420 transistor smd code marking 431 MARKING SMD PNP TRANSISTOR B8 transistor smd marking 431 SMD TRANSISTOR MARKING B8 TRANSISTOR SMD MARKING CODE 278 PBSS4160DS PBSS5160DS SC74 marking 345
    Text: PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat BISS transistor Rev. 03 — 9 February 2006 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.


    Original     		PBSS4160DS OT457 SC-74) PBSS5160DS. PBSS4160DS transistor smd marking 431.k transistor smd code marking 420 transistor smd code marking 431 MARKING SMD PNP TRANSISTOR B8 transistor smd marking 431 SMD TRANSISTOR MARKING B8 TRANSISTOR SMD MARKING CODE 278 PBSS5160DS SC74 marking 345 PDF

    BFQ60

    Abstract: BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2
    Text: 2SC D m fl23Sb05 QQQ4b43 T H S I E G — *- — — • » « * w r i u u _ Low Noise NPN Silicon Microwave Transistor BFQ 60 up to 2 GHz_T ?sr. D '7 ^ 3 / - < 3 3 _ SIEMENS AKTIENGESELLSCHAF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal


    OCR Scan     		fl23Sb05 QQ04b43 -TZ3/-33_ Q62702-F655 fl23SbOS BFQ60 BFQ60 BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2 PDF

    NTE359

    Abstract: 8-32N
    Text: NTE359 Silicon NPN Transistor RF & Microwave Transistor Description: RF Power Transistor 20W − 175 MHz Features: Specified 28 Volt, 175MHz Characteristics Output Power = 20 Watts Minimum Gain = 8.2dB Efficiency = 60% Characterized from 125 to 175MHz Includes Series Equivalent Impedances


    Original     		NTE359 175MHz 175MHz 8-32-NC-3A NTE359 8-32N PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR SM ALL SIGNAL TRANSISTOR ISSUE 2 - MARCH 94 FMMT2484 Q FEATURES * 60 Volt V,CEO PARTMARKING DETAIL - 4G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V CBO 60 V V CEO 60 V Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		FMMT2484 VCEr45V, 100uA* 500uA, 140KHz 200Hz 15kHz 300us. PDF

    MMBTA05

    Abstract: MMBTA55 driver transistor hfe 60
    Text: SEMICONDUCTOR MMBTA05 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. FEATURES E B L L Complementary to MMBTA55. H UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V


    Original     		MMBTA05 MMBTA55. 100mA 100mA, MMBTA05 MMBTA55 driver transistor hfe 60 PDF

    Untitled

    Abstract: No abstract text available
    Text: PZT156 NPN Transistor Elektronische Bauelemente Silicon Planar High Performance Transistor RoHS Compliant Product SOT-223 Description The PZT156 is designed for general purpose switching and amplifier applications. Features * 3 Amps Continous Current * 60 Volt VCEO


    Original     		PZT156 OT-223 PZT156 500mA 100mA, 50MHz 01-Jun-2002 PDF

    BCP55

    Abstract: BCX55 PBSS4160K PBSS5160K SC59
    Text: PBSS4160K 60 V, 1 A NPN low VCEsat BISS transistor Rev. 01 — 29 April 2004 Objective data sheet 1. Product profile 1.1 General description NPN low VCEsat (BISS) transistor in a SOT346 (SC59) plastic package. PNP complement: PBSS5160K. 1.2 Features •


    Original     		PBSS4160K OT346 PBSS5160K. BCP55 BCX55. BCX55 PBSS4160K PBSS5160K SC59 PDF

    BCP55

    Abstract: BCX55 PBSS4160V PBSS5160V
    Text: PBSS4160V 60 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 31 January 2005 Product data sheet 1. Product profile 1.1 General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. 1.2 Features • ■ ■


    Original     		PBSS4160V OT666 PBSS5160V. BCP55 BCX55 BCX55 PBSS4160V PBSS5160V PDF