Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NPN TRANSISTOR 60 VOLT Search Results

    NPN TRANSISTOR 60 VOLT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR 60 VOLT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c 1685 transistor

    Abstract: 1685 transistor transistor c 1685 1615mhz PH1617-60
    Text: Wireless Power Transistor, 60 Watts, 1615 - 1685 MHz PH1617-60 PH1617-60 Wireless Power Transistor 60 Watts, 1615 - 1685 MHz 1 Features • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Emitter Configuration Diffused Emitter Ballasting Resistors


    Original     		PDF PH1617-60 PH1617-60 1615MHz 1685MHz c 1685 transistor 1685 transistor transistor c 1685 1615mhz

    free transistor equivalent book

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS4160T 60 V; 1 A NPN low VCEsat BISS transistor Product specification 2003 Jun 24 Philips Semiconductors Product specification 60 V; 1 A NPN low VCEsat (BISS) transistor PBSS4160T FEATURES QUICK REFERENCE DATA


    Original     		PDF M3D088 PBSS4160T SCA75 613514/01/pp12 free transistor equivalent book

    PBSS4160T

    Abstract: BCP55 BCX55 PBSS5160T
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS4160T 60 V, 1 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Jun 24 2004 May 12 Philips Semiconductors Product specification 60 V, 1 A NPN low VCEsat (BISS) transistor


    Original     		PDF M3D088 PBSS4160T SCA76 R75/02/pp10 PBSS4160T BCP55 BCX55 PBSS5160T

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D088 PBSS4160T 60 V, 1 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Jun 24 2004 May 12 NXP Semiconductors Product data sheet 60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160T


    Original     		PDF M3D088 PBSS4160T R75/02/pp10

    BCP55

    Abstract: BCX55 PBSS4160T PBSS5160T
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS4160T 60 V, 1 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Jun 24 2004 May 12 NXP Semiconductors Product data sheet 60 V, 1 A NPN low VCEsat (BISS) transistor PBSS4160T


    Original     		PDF M3D088 PBSS4160T BCP55 BCX55. R75/02/pp10 BCX55 PBSS4160T PBSS5160T

    transistor marking t05

    Abstract: T05 sot-23 transistor t05 h 033 cht05
    Text: CHENMKO ENTERPRISE CO.,LTD CHT05PT SURFACE MOUNT NPN General Purpose Transistor VOLTAGE 60 Volts CURRENT 0.5 Ampere APPLICATION * General purpose applications. SOT-23 * NPN General Purpose Transistor .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04)


    Original     		PDF CHT05PT OT-23 OT-23) 500mA) transistor marking t05 T05 sot-23 transistor t05 h 033 cht05

    CHT05GP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHT05GP SURFACE MOUNT NPN General Purpose Transistor VOLTAGE 60 Volts CURRENT 0.5 Ampere APPLICATION * General purpose applications. SOT-23 * NPN General Purpose Transistor .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04)


    Original     		PDF CHT05GP OT-23 OT-23) 500mA) CHT05GP

    BU806 MOTOROLA

    Abstract: BU806 motorola darlington power transistor NT 407 F TRANSISTOR 221A-06 transistor j 127
    Text: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal


    Original     		PDF BU806/D* BU806/D BU806 MOTOROLA BU806 motorola darlington power transistor NT 407 F TRANSISTOR 221A-06 transistor j 127

    BU806

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal


    Original     		PDF 220AB BU806

    TRANSISTOR SMD MARKING CODE 1 KW

    Abstract: No abstract text available
    Text: 2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V, 0.03 A Datasheet - production data Features 60 V IC max 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65°C to +200°C • Hi-Rel NPN dual matched bipolar transistor LCC-6 TO-77


    Original     		PDF 2N2920AHR 2N2920AHR DocID15383 TRANSISTOR SMD MARKING CODE 1 KW

    *2N2920* LCC

    Abstract: soc2920ahrb
    Text: 2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V, 0.03 A Datasheet — production data Features BVCEO 60 V IC max 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65°C to +200°C • Hi-Rel NPN dual matched bipolar transistor ■


    Original     		PDF 2N2920AHR 2N2920AHR *2N2920* LCC soc2920ahrb

    soc2920ahrb

    Abstract: 2N2920AHR marking code SMD ic N1 smd transistor st smd diode marking code all ic datasheet in one pdf file NV SMD TRANSISTOR smd diode order marking code stmicroelectronics transistor marking N1 TRANSISTOR SMD MARKING CODES
    Text: 2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V - 0.03 A Features BVCEO 60 V IC max 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65°C to +200°C • Hi-Rel NPN dual matched bipolar transistor ■ Linear gain characteristics ■


    Original     		PDF 2N2920AHR 2N2920AHR soc2920ahrb marking code SMD ic N1 smd transistor st smd diode marking code all ic datasheet in one pdf file NV SMD TRANSISTOR smd diode order marking code stmicroelectronics transistor marking N1 TRANSISTOR SMD MARKING CODES

    Untitled

    Abstract: No abstract text available
    Text: PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat BISS transistor Rev. 01 — 26 April 2004 Objective data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat (BISS) transistor pair in a SOT457 (SC-74) plastic package. PNP complement: PBSS5160DS. 1.2 Features


    Original     		PDF PBSS4160DS OT457 SC-74) PBSS5160DS.

    npn transistor footprint

    Abstract: No abstract text available
    Text: PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4260PAN DFN2020-6 OT1118) PBSS4260PANP. PBSS5260PAP. AEC-Q101 npn transistor footprint

    Untitled

    Abstract: No abstract text available
    Text: 2N2920AHR Hi-Rel NPN dual matched bipolar transistor 60 V - 0.03 A Features BVCEO 60 V IC max 0.03 A HFE at 10 V - 150 mA > 300 Operating temperature range -65°C to +200°C • Hi-Rel NPN dual matched bipolar transistor ■ Linear gain characteristics ■


    Original     		PDF 2N2920AHR 2N2920AHR

    bu806 REPLACEMENT

    Abstract: k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s.


    Original     		PDF 220AB BU806 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C bu806 REPLACEMENT k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326

    Untitled

    Abstract: No abstract text available
    Text: 2ST3360 Hi-Rel NPN and PNP bipolar transistor 60 V, 2 A Target specification Features Polarity BVCEO IC max hFE(1) NPN 60 V 0.8 A 160 PNP -60 V - 0.8 A 160 1. @ Ic = 1 A and VCE = 2 V. • Very low collector-emitter saturation voltage ■ High current gain characteristic


    Original     		PDF 2ST3360 2ST3360

    Untitled

    Abstract: No abstract text available
    Text: 2ST3360 Hi-Rel NPN and PNP bipolar transistor 60 V, 2 A Target specification Features Polarity BVCEO IC max hFE(1) NPN 60 V 0.8 A 160 PNP -60 V - 0.8 A 160 1. @ Ic = 1 A and VCE = 2 V. • Very low collector-emitter saturation voltage ■ High current gain characteristic


    Original     		PDF 2ST3360 2ST3360

    transistor NPN 30 watt

    Abstract: transistor Ic 1A NPN FHFCX491 npn transistor 60 volt 5v power transistor 60V transistor npn 1a TRANSISTOR NPN 60V Collector 5v npn TRANSISTOR
    Text: NPN ᒦ৖ൈहࡍྯ૵਌ NPN Medium Power Transistor NPN Medium Power Transistor DESCRIPTION & FEATURES 60 Volt VCEO 1A Amp continuous current FHFCX491 NPN ᒦ৖ൈहࡍྯ૵਌ 概述及特點 SOT-89 Ptot =1 Watt PIN ASSIGNMENT 引腳說明 PIN NAME


    Original     		PDF FHFCX491 OT-89 OT-89 FHFCX491 500mA 100mA 100mA 100MHZ transistor NPN 30 watt transistor Ic 1A NPN npn transistor 60 volt 5v power transistor 60V transistor npn 1a TRANSISTOR NPN 60V Collector 5v npn TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: 2ST3360 Hi-Rel NPN and PNP bipolar transistor 60 V, 0.8 A Datasheet — production data Features Polarity BVCEO IC max hFE(1) NPN 60 V 0.8 A 160 PNP -60 V - 0.8 A 160 1. @ Ic = 1 A and VCE = 2 V. • Very low collector-emitter saturation voltage ■ High current gain characteristic


    Original     		PDF 2ST3360 2ST3360

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal


    OCR Scan     		PDF BU806/D BU806 -220A 21A-06 O-220AB

    npn darlington transistor 200 watts

    Abstract: Motorola Bipolar Power Transistor Data motorola darlington power transistor transistor 3250
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s.


    OCR Scan     		PDF BU806 O-220AB 21A-06 O-220AB npn darlington transistor 200 watts Motorola Bipolar Power Transistor Data motorola darlington power transistor transistor 3250

    PN3567

    Abstract: No abstract text available
    Text: PN3567 NPN SILICON TRANSISTOR DESCRIPTION PN3567 is NPN silicon planar epitaxial transistor designed for amplifier and switching applications. TO-92 EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage V cbo 80 V Collector-Emitter Voltage V ceo 60 V Emitter-Base Voltage


    OCR Scan     		PDF PN3567 500mA 600mW 100jiA 120AX 150mA 300nS,

    sot23 mark code CB

    Abstract: la marking
    Text: KST05/06 NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t: Rating Unit 60 60 V V V V ebo lc Pc T sto 60 80 4 500 350 150 Rm (i-a) 357 C haracteristic Sym bol Collector Base Voltage VcBO :KST0S :KST06 Collector-Em itter Voltage


    OCR Scan     		PDF KST05/06 OT-23 KST06 KST05 KSP05 sot23 mark code CB la marking