transistor SD335
Abstract: SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339
Text: RFT Beschreibung Si-npn-Planar-Epitaxie, TO39 Si-npn-Planar-EpitaxieSC116 NF-Transistor Si-npn-Planar-EpitaxieSC117 NF-Transistor Si-npn-Planar-EpitaxieSC118 NF-Transistor Si-npn-Planar-EpitaxieSC119 NF-Transistor Si-npn-Planar-EpitaxieSC236 NF-Transistor für Vorund Treiberstufen
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Si-npn-Planar-EpitaxieSC116
Si-npn-Planar-EpitaxieSC117
Si-npn-Planar-EpitaxieSC118
Si-npn-Planar-EpitaxieSC119
Si-npn-Planar-EpitaxieSC236
Si-npn-Planar-EpitaxieSC237
Si-npn-Planar-EpitaxieSC238
VorSC239
Si-pnp-Planar-EpitaxieSC307
Si-pnp-Planar-EpitaxieSC308
transistor SD335
SF126
SF127
SF128
SD337
sd336
SF137
BF241 TRANSISTOR
SD349
SD339
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Untitled
Abstract: No abstract text available
Text: PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat BISS transistor Rev. 01 — 26 April 2004 Objective data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat (BISS) transistor pair in a SOT457 (SC-74) plastic package. PNP complement: PBSS5160DS. 1.2 Features
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PBSS4160DS
OT457
SC-74)
PBSS5160DS.
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NPN TRANSISTOR SMD MARKING CODE B2
Abstract: DFN2020-6
Text: PBSS4230PAN 30 V, 2 A NPN/NPN low VCEsat BISS transistor 14 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS4230PAN
DFN2020-6
OT1118)
PBSS4230PANP.
PBSS5230PAP.
AEC-Q101
NPN TRANSISTOR SMD MARKING CODE B2
DFN2020-6
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npn transistor footprint
Abstract: No abstract text available
Text: PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS4260PAN
DFN2020-6
OT1118)
PBSS4260PANP.
PBSS5260PAP.
AEC-Q101
npn transistor footprint
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Untitled
Abstract: No abstract text available
Text: DF N2 020 -6 PBSS4130PAN 30 V, 1 A NPN/NPN low VCEsat BISS transistor 11 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
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PBSS4130PAN
DFN2020-6
OT1118)
PBSS4130PANP.
PBSS5130PAP.
AEC-Q101
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SO642
Abstract: SO692
Text: SO642 SMALL SIGNAL NPN TRANSISTOR • ■ ■ ■ Type Marking SO 642 N91 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER PNP COMPLEMENT IS SO692 2 3
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SO642
SO692
OT-23
SO642
SO692
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SC15
Abstract: LTE42008R Data Handbook sc15
Text: DISCRETE SEMICONDUCTORS DATA SHEET LTE42008R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 24 Philips Semiconductors Product specification NPN microwave power transistor
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LTE42008R
OT440A
SCA53
127147/00/02/pp12
SC15
LTE42008R
Data Handbook sc15
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tm1101
Abstract: schottky-diode PZTM1101 PZTM1102
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D087 PZTM1101 NPN transistor/Schottky-diode module Product specification File under Discrete Semiconductors, SC01 1996 May 09 Philips Semiconductors Product specification NPN transistor/Schottky-diode module
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M3D087
PZTM1101
OT223
PZTM1102.
tm1101
schottky-diode
PZTM1101
PZTM1102
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ic 901
Abstract: 2SC5603 2SC5676 uPA846TC-T1
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA846TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5603, 2SC5676) Q1: 13.5 GHz fT high-gain transistor
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PA846TC
2SC5603,
2SC5676)
S21e2
2SC5603
2SC5676
ic 901
2SC5603
2SC5676
uPA846TC-T1
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ZO 103 MA 75 623
Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
Text: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
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2SC5008
2SC5008
ZO 103 MA 75 623
ZO 103 MA 75 542
1 928 405 767
NEC C 3568
TD-2433
2SC5008-T1
4557 nec
518 1149 0 44 111
1 928 405 452
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tm1101
Abstract: schottkydiode schottky-diode schottky transistor npn
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D087 PZTM1101 NPN transistor/Schottky-diode module Product specification 1996 May 09 Philips Semiconductors Product specification NPN transistor/Schottky-diode module PZTM1101 FEATURES DESCRIPTION • Low output capacitance
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M3D087
PZTM1101
OT223
PZTM1102.
MAM236
tm1101
schottkydiode
schottky-diode
schottky transistor npn
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TRANSISTOR SMD MARKING CODE MV DIODE
Abstract: TRANSISTOR SMD CODE PACKAGE SOT223 PZTM1101 Transistor Catalog
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D087 PZTM1101 NPN transistor/Schottky-diode module Product specification 1996 May 09 Philips Semiconductors Product specification NPN transistor/Schottky-diode module PZTM1101 FEATURES DESCRIPTION • Low output capacitance
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M3D087
PZTM1101
PZTM1101
OT223
PZTM1102.
TM1101.
MAM236
TRANSISTOR SMD MARKING CODE MV DIODE
TRANSISTOR SMD CODE PACKAGE SOT223
Transistor Catalog
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DTC143EL
Abstract: DTC143E DTC143EL-AL3-R DTC143ELA DTC143EG-AL3-R TRANSISTOR JC SOT 23
Text: UNISONIC TECHNOLOGIES CO., LTD DTC143E NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR BUILT-IN RESISTORS FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent
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DTC143E
DTC143EL-AE3-R
DTC143EG-AE3-R
DTC143EL-AL3-R
DTC143EG-AL3-R
OT-23
OT-323
QW-R206-053
DTC143EL
DTC143E
DTC143EL-AL3-R
DTC143ELA
DTC143EG-AL3-R
TRANSISTOR JC SOT 23
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"MARKING CODE P5"
Abstract: BFG425W
Text: DISCRETE SEMICONDUCTORS BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1997 Apr 16 File under Discrete Semiconductors, SC14 1997 Oct 28 Philips Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES
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BFG425W
SCA55
127127/00/03/pp12
"MARKING CODE P5"
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Untitled
Abstract: No abstract text available
Text: 2N4150S Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150SJ
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2N4150S
MIL-PRF-19500
2N4150SJ)
2N4150SJX)
2N4150SJV)
MIL-STD-750
MIL-PRF-19500/394
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Untitled
Abstract: No abstract text available
Text: MMBT489LT1 Product Preview High Current Surface Mount NPN Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS 2.0 AMPS NPN TRANSISTOR MAXIMUM RATINGS TA = 25°C Symbol Max Unit Collector-Emitter Voltage VCEO
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MMBT489LT1
r14525
MMBT489LT1/D
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SMD transistor MARKING CODE 43
Abstract: TRANSISTOR SMD MARKING CODE A1 TRANSISTOR SMD MARKING CODE 42 SMD Transistor A1 TC114E smd TRANSISTOR code marking 36 smd TRANSISTOR code marking 013 Transistor SMD marking code NV smd transistor 023 TRANSISTOR SMD MARKING CODE X D
Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC114E series NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Product specification Supersedes data of 1999 May 31 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistor;
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PDTC114E
resistor-equipPDTC114EE
PDTC114EU
PDTC114EEF
SMD transistor MARKING CODE 43
TRANSISTOR SMD MARKING CODE A1
TRANSISTOR SMD MARKING CODE 42
SMD Transistor A1
TC114E
smd TRANSISTOR code marking 36
smd TRANSISTOR code marking 013
Transistor SMD marking code NV
smd transistor 023
TRANSISTOR SMD MARKING CODE X D
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2N4150S
Abstract: 2N4150SJ 2N4150SJV 2N4150SJX
Text: 2N4150S Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power, High voltage • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4150SJ
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2N4150S
MIL-PRF-19500
2N4150SJ)
2N4150SJX)
2N4150SJV)
MIL-STD-750
MIL-PRF-19500/394
2N4150S
2N4150SJ
2N4150SJV
2N4150SJX
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transistor marking zg
Abstract: PBSS4320T PBSS5320T
Text: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4320T 20 V NPN low VCEsat transistor Product specification Supersedes data of 2002 Aug 08 2004 Mar 18 Philips Semiconductors Product specification 20 V NPN low VCEsat transistor PBSS4320T QUICK REFERENCE DATA FEATURES
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PBSS4320T
SCA76
R75/02/pp10
transistor marking zg
PBSS4320T
PBSS5320T
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BUL310
Abstract: No abstract text available
Text: B U L 310 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED
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tm1101
Abstract: Diode schottky eb PZTM1101 PZTM1102
Text: Product specification Philips Semiconductors PZTM1101 NPN transistor/Schottky-diode module FEATURES DESCRIPTION • Low output capacitance Combination of an NPN transistor and a Schottky barrier diode in a plastic SOT223 package. PNP complement: PZTM1102.
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PZTM1101
OT223
PZTM1102.
TM1101.
OT223)
OT223.
7110flEb
tm1101
Diode schottky eb
PZTM1101
PZTM1102
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3BS transistor
Abstract: S0642
Text: rz 7 ^ 7# SGS-THOMSON R L ie r a « S 0 6 4 2 SMALL SIGNAL NPN TRANSISTOR Type Marking SO 642 N91 . SILICON EPITAXIAL PLANAR NPN TRANSISTOR . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER
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S0692
OT-23
SC06960
S0642
OT-23
3BS transistor
S0642
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IC SEM 2105
Abstract: 3771 nec
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
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2SC5008
2SC5008
IC SEM 2105
3771 nec
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928 606 402 00
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low
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2SC5008
2SC5008
928 606 402 00
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