BLY93a
Abstract: No abstract text available
Text: Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. P a r t Number: BLY93A DescrIption: BJTs , Si NPN Power HP" The RF Line 40 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR
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BLY93A
30Vdc.
175MHzl
BLY93a
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SOT343R
Abstract: SC 2272 IC vco 900 1800 mhz "dual TRANSISTORs" sot363 BFG480W bga2004 BGA2709 PBR951 BGA2771 BFG310W/XR
Text: Semiconductors Philips RF wideband transistors and MMICs for wireless RF Wideband Transistors RF Wideband Transistors Type fT Vceo GHz (V) SOT23, NPN PMBHT10 PBR941 PBR951 SOT23, PNP PMBTH81 BFG310/XR BFG325/XR SOT323, NPN BFS17W PRF547 PRF957 SOT323, PNP
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PMBHT10
PBR941
PBR951
PMBTH81
BFG310/XR
BFG325/XR
OT323,
BFS17W
PRF547
PRF957
SOT343R
SC 2272
IC vco 900 1800 mhz
"dual TRANSISTORs" sot363
BFG480W
bga2004
BGA2709
PBR951
BGA2771
BFG310W/XR
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2SC4703-T1
Abstract: NE46234 2SC4703 2SC470-3
Text: NPN SILICON RF TRANSISTOR NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage
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NE46234
2SC4703
2SC4703
OT-89)
dBV/75
PU10339EJ01V1DS
2SC4703-T1
2SC470-3
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2SC4093
Abstract: 2SC4093-T1 R26 transistor R27 transistor
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4093 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD DESCRIPTION The 2SC4093 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
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2SC4093
2SC4093
S21e2
2SC4093-T1
R26 transistor
R27 transistor
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NEC 2501
Abstract: 2SC4536-T1 ic nec 2501 2501 NEC 2SC4536 nec RF package SOT89 qs marking sot-89
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4536 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features
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2SC4536
2SC4536
OT-89)
PU10338EJ01V0DS
NEC 2501
2SC4536-T1
ic nec 2501
2501 NEC
nec RF package SOT89
qs marking sot-89
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nec 2501
Abstract: ic nec 2501 nec RF package SOT89 2SC4703 2501 NEC 2SC4703-T1 2SC470-3
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage VCE = 5 V .
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2SC4703
2SC4703
OT-89)
PU10339EJ01V1DS
nec 2501
ic nec 2501
nec RF package SOT89
2501 NEC
2SC4703-T1
2SC470-3
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ic nec 2501
Abstract: nec 2501 2501 NEC 2SC4703-T1 2SC4703 2SC470-3 nec RF package SOT89
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage VCE = 5 V .
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2SC4703
2SC4703
OT-89)
PU10339EJ01V0DS
ic nec 2501
nec 2501
2501 NEC
2SC4703-T1
2SC470-3
nec RF package SOT89
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2N5643
Abstract: No abstract text available
Text: New TELEPHONE: 201 376-2922 3STERNAVE. PRINGFIELD, NEW JERSEY 07081 .S.A. (212) 227-6005 FAX: (201) 376-8960 2N5643 The RF Line 40 W- 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed primarily for wideband large-signal amplifier stages in
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2N5643
30Vdc.
2N5643
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transistor 2sc3355 and application
Abstract: transistor 2sc3355 and application NOTICE 2SC3355 2SC3355, npn 2SC3355-T PA33
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3355 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic.
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2SC3355
2SC3355
2SC3355-T
PU10208EJ01V0DS
transistor 2sc3355 and application
transistor 2sc3355 and application NOTICE
2SC3355, npn
2SC3355-T
PA33
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CMPT918
Abstract: No abstract text available
Text: Central Central TMTM CMPT918 SemiconductorCorp. Corp. Semiconductor NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT918 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,
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CMPT918
CMPT918
OT-23
100MHz
500MHz
200MHz
60MHz
28-Mar
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2SC3356 s2p
Abstract: 2SC3356 2SC3356-A NE85633-T1B-A 2SC3356-T1B-A
Text: A Business Partner of Renesas Electronics Corporation. Preliminary NE85633 / 2SC3356 Data Sheet R09DS0021EJ0300 Rev.3.00 NPN Silicon RF Transistor Jun 28, 2011 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES
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NE85633
2SC3356
R09DS0021EJ0300
2SC3356
NE85633-T1B
2SC3356-T1B
NE85633-A
2SC3356-A
NE85633-T1B-A
2SC3356 s2p
2SC3356-T1B-A
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BFT92A
Abstract: BFT93A BFG134 bf689 sot37 sot173 BFG34 BFQ52 bfg65 sot143 philips bfw92
Text: 52 RF/Microwave Devices First Generation RF W ideband Transistors fT to 3.5 GHz metal can fr/ lc Curve Polarity (1) (2) N PN NPN (3) (4) (5) NPN NPN NPN (6) (18) NPN NPN TO-39 surface mount plastic TO-72 TQ-92 BFY90 BF689K BF763 BFW30 SOt-37 ceramic SOT-122E
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BFY90
TQ-92
BF689K
BF763
SOt-37
BFT24
BFW92
BFW93
OT-122E
OT-23
BFT92A
BFT93A
BFG134
bf689
sot37
sot173
BFG34
BFQ52
bfg65 sot143
philips bfw92
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MRF839
Abstract: MRF839F
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF839 MRF839F The RF Line NPN Silicon RF Power Transistors 2 3 W 806-960 MHz RF POWER TRANSISTORS COMMON-EMITTER NPN SILICON . . . designed for 12.5 Volt UHF large-signal, common-emitter amplifier applications in
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MRF839F
MRF839
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MRF262
Abstract: MRF264 MRF260 MRF261
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF261 The RF Line 10W 136 175 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed for 12.5 Volt VHF large-signal power am plifier appli cations in commercial and industrial equipment. NPN SILICO N
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MRF261
O-220AB
MRF260
MRF262
MRF264
MRF261
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56590653B
Abstract: BH Rf transistor
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed fo r 12.5 volt low band VHF large-signal power am plifier applications in commercial and industrial FM equipment. 70 W, 50 MHz RF POWER TRANSISTOR NPN SILICON
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56-590-65/3B
MRF492
56590653B
BH Rf transistor
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si diode 1N4007
Abstract: MRF841 MOTOROLA TRANSISTOR 935 150 watts power amplifier layout
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • • • • 50 W, 960 MHz RF POWER TRANSISTOR NPN SILICON
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MRF6414
MRF6414PHT/D
MRF6414
MRF8414
si diode 1N4007
MRF841
MOTOROLA TRANSISTOR 935
150 watts power amplifier layout
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Motorola transistors MRF455
Abstract: No abstract text available
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • 60 W, 30 MHz RF POWER TRANSISTOR NPN SILICON Specified 12.5 Volt, 30 MHz Characteristics —
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iF/15
VK200-20/4B,
56-590-65/3B
MRF455
Motorola transistors MRF455
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transistor bd135
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3032 The RF Line NPN Silicon RF Power TVansistor The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and digital systems. • 21 W, 960 MHz RF POWER TRANSISTOR NPN SILICON
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TP3032
TP3032
BD135
transistor bd135
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MRF454 motorola
Abstract: ferroxcube 56-590-65 56590653B
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF454 NPN Silicon RF Power TVansistor . . . designed for power am plifier applications in industrial, commercial and am ateur radio equipment to 30 MHz. • 80 W, 30 MHz RF POWER TRANSISTOR NPN SILICON Specified 12.5 Volt, 30 MHz Characteristics —
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MRF454
MRF454
nF/15
VK200-20/4B,
56-590-65/3B
MRF454 motorola
ferroxcube 56-590-65
56590653B
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vk200 coil
Abstract: jmc 5201 ferroxcube 56-590-65 VK200-19 FERROXCUBE VK200
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF P o w er T ran sisto r . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. 10 W, 400 MHz RF POWER TRANSISTOR NPN SILICON
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MRF321
vk200 coil
jmc 5201
ferroxcube 56-590-65
VK200-19
FERROXCUBE VK200
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MRF232
Abstract: H546
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF232 The RF Line 7.5 W - 9 0 M Hz RF POWER TRANSISTO R NPN SILICON RF POWER TRANSISTOR NPN SILICON .design ed for 12.5 Volt, mid-band large-signal amplifier appli cations in industrial and commercial FM equipment operating in the
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MRF232
MRF232
H546
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J476
Abstract: capacitor j476 NALCO
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF2628 The RF Line 15 W 136-220 M H i RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON Designed for 12.5 volt VHF large-signal power am plifiers in commercial and industrial FM equipment. • Compact .280 Stud Package
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MRF2628
J476
capacitor j476
NALCO
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MRF221
Abstract: wide band choke vk200 MRF216 2N6081 VK200 VK200 ferrite broad band operation
Text: M RF216 silicon Tine RF L ine 40 W — 175 MHz CONTROLLED O RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . .designed for 12.5 V o lt V H F large-signal am plifier applications in industrial and commercial FM equipment operating to 175 MHz.
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MRF216
MRF221
2N6081
MRF221
wide band choke vk200
MRF216
VK200
VK200 ferrite
broad band operation
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e RF Line 5 W - 400 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed prim arily for wideband large-signal driver and predriver am plifier stages in the 2 0 0 -6 0 0 M H z frequency range.
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MRF5175
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