2SC3356 s2p
Abstract: 2SC3356 2SC3356-A NE85633-T1B-A 2SC3356-T1B-A
Text: A Business Partner of Renesas Electronics Corporation. Preliminary NE85633 / 2SC3356 Data Sheet R09DS0021EJ0300 Rev.3.00 NPN Silicon RF Transistor Jun 28, 2011 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES
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NE85633
2SC3356
R09DS0021EJ0300
2SC3356
NE85633-T1B
2SC3356-T1B
NE85633-A
2SC3356-A
NE85633-T1B-A
2SC3356 s2p
2SC3356-T1B-A
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2SC4226-T1
Abstract: 2SC4226-T1-A ne85630 NE85630-A 2SC4226T1a transistor s2p Transistor R25 NE85630A 2SC4226-A r23 transistor
Text: A Business Partner of Renesas Electronics Corporation. Preliminary NE85630 / 2SC4226 Data Sheet R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor
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NE85630
2SC4226
R09DS0022EJ0200
2SC4226
S21e2
SC-70)
2SC4226-T1
2SC4226-T1-A
NE85630-A
2SC4226T1a
transistor s2p
Transistor R25
NE85630A
2SC4226-A
r23 transistor
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2SC3356
Abstract: IC nec 555 transistor 1431 T marking 544 low noise amplifier
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
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2SC3356
2SC3356
IC nec 555
transistor 1431 T
marking 544 low noise amplifier
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JLN 2003
Abstract: 2SC4226 APPLICATION NOTES newmarket transistor 2SC4226 2SC4226-T1 2SC4226-T1-A 2SC4226-A Korea Electronics TRANSISTOR
Text: PreliminaryData Sheet 2SC4226 R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.
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2SC4226
R09DS0022EJ0200
2SC4226
S21e2
2SC4226-A
2SC4226-T1
JLN 2003
2SC4226 APPLICATION NOTES
newmarket transistor
2SC4226-T1
2SC4226-T1-A
2SC4226-A
Korea Electronics TRANSISTOR
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2SC3356-T1B-A
Abstract: 2SC3356 2SC3356 s2p 2SC3356-T1B
Text: PreliminaryData Sheet 2SC3356 R09DS0021EJ0300 Rev.3.00 NPN Silicon RF Transistor Jun 28, 2011 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
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2SC3356
R09DS0021EJ0300
2SC3356
2SC3356-T1B
2SC3356-A
2SC3356-T1B-A
2SC3356 s2p
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2SC4226
Abstract: 2SC4226 APPLICATION NOTES PU10450EJ01V0DS R25 marking 2SC4226 datasheet marking r25 NPN 2SC4226-T1 transistor s2p
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4226 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold
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2SC4226
2SC4226
S21e2
2SC4226-T1
2SC4226 APPLICATION NOTES
PU10450EJ01V0DS
R25 marking
2SC4226 datasheet
marking r25 NPN
2SC4226-T1
transistor s2p
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2SC3356 s2p
Abstract: 2SC3356 Application Note 2SC3356-T1B 2SC3356 R24 marking DATASHEET TRANSISTOR 2sc3356
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
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2SC3356
2SC3356-T1B
2SC3356 s2p
2SC3356 Application Note
2SC3356-T1B
2SC3356
R24 marking DATASHEET
TRANSISTOR 2sc3356
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2SC3356
Abstract: R25 2sc3356 marking r25 NPN 2SC3356-T1B NE85633 PU10209EJ02V0DS
Text: NPN SILICON RF TRANSISTOR NE85633 / 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
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NE85633
2SC3356
NE85633-A
2SC3356
NE85633-T1B-A
2SC3356-T1B
R23/Q
R24/R
R25/S
PU10209EJ02V0DS
R25 2sc3356
marking r25 NPN
PU10209EJ02V0DS
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2SC3356 s2p
Abstract: 2SC3356 Application Note 2SC3356 nec marking 2sc3356
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
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2SC3356
2SC3356-T1
2SC3356 s2p
2SC3356 Application Note
2SC3356
nec marking 2sc3356
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2SC3356
Abstract: marking r25 sot23 r25 marking NPN R25 QW-R206-024 2SC3356 R25 sot-23
Text: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER
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2SC3356
OT-23
QW-R206-024
2SC3356
marking r25 sot23
r25 marking
NPN R25
2SC3356 R25 sot-23
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Untitled
Abstract: No abstract text available
Text: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER
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2SC3356
OT-23
QW-R206-024
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nec 2741
Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.
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2SC4226
2SC4226
SC-70
2SC4226-T1
nec 2741
2SC4226 datasheet
2SC4226-T1
2SC4226-T2
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Untitled
Abstract: No abstract text available
Text: FJV3105R NPN Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit Driver Circuit, • Built-in Bias Resistor R1 = 4.7 kΩ, R2 = 10 kΩ • Complement to FJV4105R Application • Switching Application (Integrated Bias Resistor)
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FJV3105R
FJV4105R
OT-23
FJV3105RMTF
OT-23
FJV3105R
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Untitled
Abstract: No abstract text available
Text: FJV3105R NPN Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit Driver Circuit, • Built-in Bias Resistor R1 = 4.7 kΩ, R2 = 10 kΩ • Complement to FJV4105R Application • Switching Application (Integrated Bias Resistor)
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FJV3105R
FJV4105R
OT-23
FJV3105RMTF
OT-23
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transistor code R24
Abstract: R24 marking code transistor Transistor R25 marking r25 NPN r25 transistor SOT R23 SOT R25 marking r25 NPN R25 R24 marking DATASHEET
Text: 2SC4226 NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE SOT-323 The 2SC4226 is a Low supply voltage transistor designed for VHF, UHF low noise amplifier
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2SC4226
OT-323
2SC4226
01-June-2002
transistor code R24
R24 marking code transistor
Transistor R25
marking r25 NPN
r25 transistor
SOT R23
SOT R25
marking r25
NPN R25
R24 marking DATASHEET
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marking r25 NPN
Abstract: NPN R25 transistor code R24 R24 marking code transistor SOT R23 npn marking r25 Transistor R25 R24 marking SOT R25 2SC4226W
Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES 2SC4226W Pb z Low noise. z High gain. z Power dissipation. PC=150mW Lead-free APPLICATIONS z High frequency low noise amplifier. SOT-323 ORDERING INFORMATION Type No.
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2SC4226W
150mW)
OT-323
r23/r24/r25
BL/SSSTF042
marking r25 NPN
NPN R25
transistor code R24
R24 marking code transistor
SOT R23
npn marking r25
Transistor R25
R24 marking
SOT R25
2SC4226W
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA801T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 ELEMENTS MINI MOLD The µPA801T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS (Unit: mm)
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PA801T
PA801T
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marking R24
Abstract: 2sc4226 nec 2741 MARKING 702 6pin ic
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA801T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 ELEMENTS MINI MOLD The µPA801T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS (Unit: mm)
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PA801T
PA801T
marking R24
2sc4226
nec 2741
MARKING 702 6pin ic
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spindle and VCM motor controller
Abstract: 3 phase bldc controller hdd vcm controller brake failure indicator result brake failure indicator hard drive spindle motors diagram FAN8621B spindle motor VCM controller 64 12v back-emf RB4110
Text: www.fairchildsemi.com FAN8621B 12V Spindle Motor and Voice Coil Motor Driver IC Features Description General The FAN8621B, is a Bipolar monolithic stand-alone IC, designed for 12V HDD applications.The internal power stage consists of vertical PNP and NPN TRs for both SPM
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FAN8621B
FAN8621B,
spindle and VCM motor controller
3 phase bldc controller hdd
vcm controller
brake failure indicator result
brake failure indicator
hard drive spindle motors diagram
FAN8621B
spindle motor VCM controller 64 12v
back-emf
RB4110
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transistor NEC D 588
Abstract: IC nec 555 nec d 588 marking 544 low noise amplifier ZS12 nec 501 t nec marking 2sc3356 R25 2sc3356
Text: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.
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2SC3356
2SC3356
transistor NEC D 588
IC nec 555
nec d 588
marking 544 low noise amplifier
ZS12
nec 501 t
nec marking 2sc3356
R25 2sc3356
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GE 2646
Abstract: 2SC3356 r25 CD/GE S 2646
Text: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS T he 2 S C 3 3 5 6 is an NPN silico n ep ita xia l tra n sisto r d e sig n e d for low Units: mm noise a m p lifie r at VH F, U H F and C A T V band.
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2SC3356
2SC3356
S22e-FREQUENCY
GE 2646
2SC3356 r25
CD/GE S 2646
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C30A
Abstract: 2sd1597 LE30 C30AB
Text: 2 S D 1 5 9 7 ÿ ' j z I > NPN SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY PO W ER AM PLIFIER 1. 2. — X : B ase n u ? ^ ; C o lle c to r 7 7 > / (F la n g e ) 3. -X- z / 7 l E m itte r (D im en sion s in mm) (T O -3 P ) ABSOLUTE MAXIMUM RATINGS (7 'a= 2 5 °C )
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2SD1597
2SD1597
rr-25
-50mA,
Vcs-100V,
/c-15A*
Je-15
C30A
LE30
C30AB
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NEC IC D 553 C
Abstract: nec 2741 702 mini transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.
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2SC4226
2SC4226
SC-70
2SG4226-T1
NEC IC D 553 C
nec 2741
702 mini transistor
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN 949B 2SC3038 N0.949B NPN Triple Diffused Planar Silicon Transistor 400V/4A Switching Regulator Applications Features . High breakdown voltage VQBQ^500V . Fast switching speed. . Wide ASO. Absolute Hazimn Ratings at Ta=25 C Collector-to-Base Voltage
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2SC3038
00V/4A
QQHDD57
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