k 4110
Abstract: GEOY6976 Q62702-P5073
Text: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter SFH 3100 F Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik
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3100y
k 4110
GEOY6976
Q62702-P5073
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mouse Phototransistor
Abstract: KM-4457 W610MP4BT/BD
Text: NPN BLACK PLASTIC PHOTOTRANSISTOR W610MP4BT/BD Features Description ! MECHANICALLY AND SPECTRALLY MATCHED Made with NPN silicon phototransistor chips. TO THE KM-4457 INFRARED EMITTING LED LAMP SERIES. ! BLACK PLASTIC PACKAGE. ! COUPLED WITH KM-4457 INFRARED EMITTING
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W610MP4BT/BD
KM-4457
DSAD2239
APR/15/2003
100uA
500uA
940nm
mouse Phototransistor
W610MP4BT/BD
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L-610MP4BT-BD
Abstract: 610MP4BT L-610MP4BT L-610MP4BT/BD KM-4457 610mp4 mouse Phototransistor
Text: NPN BLACK PLASTIC PHOTOTRANSISTOR L-610MP4BT/BD Features Description ! MECHANICALLY AND SPECTRALLY MATCHED Made with NPN silicon phototransistor chips. TO THE KM-4457 INFRARED EMITTING LED LAMP SERIES. ! BLACK PLASTIC PACKAGE. ! COUPLED WITH KM-4457 INFRARED EMITTING
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L-610MP4BT/BD
KM-4457
DSAB1504
DEC/21/2002
100uA
500uA
940nm
L-610MP4BT-BD
610MP4BT
L-610MP4BT
L-610MP4BT/BD
610mp4
mouse Phototransistor
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TEST2600
Abstract: TSSS2600
Text: TEST2600 Vishay Telefunken Silicon NPN Phototransistor Description TEST2600 is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature side view plastic package with cylindrical lens. Its epoxy casting is designed as a infrared filter to
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TEST2600
TEST2600
950nm)
TSSS2600
D-74025
20-May-99
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GEO06021
Abstract: Q62702-P20 Q62702-P43-S2 Q62702-P43-S3 Q62702-P43-S4
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor BPX 81 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 440 nm bis 1070 nm • Hohe Linearität • Einstellige Zeilenbauform aus klarem Epoxy • Gruppiert lieferbar Features
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GEO06021
GEO06021
Q62702-P20
Q62702-P43-S2
Q62702-P43-S3
Q62702-P43-S4
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Untitled
Abstract: No abstract text available
Text: .025" NPN Phototransistors Molded Lensed Lateral Package VTT7122H, 7123H, 7125H PACKAGE DIMENSIONS inch mm CASE 7 LATERAL CHIP TYPE: 25T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS (@ 25°C unless otherwise noted) A small area high speed NPN silicon phototransistor
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VTT7122H,
7123H,
7125H
VTE717xH
VTT7122H
VTT7123H
VTT7125H
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Untitled
Abstract: No abstract text available
Text: BPX43 Vishay Telefunken Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation
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BPX43
BPX43
D-74025
20-May-99
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bpx38
Abstract: No abstract text available
Text: BPX43 Vishay Semiconductors Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation
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BPX43
BPX43
08-Apr-05
bpx38
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Untitled
Abstract: No abstract text available
Text: BPX43 Vishay Telefunken Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation
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BPX43
BPX43
D-74025
20-May-99
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Q62702-P43-S3
Abstract: BPX osram BPX-81-4 Q62702-P43-S4 GEOY6021 Q62702-P20
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor BPX 81 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 440 nm bis 1070 nm • Hohe Linearität • Einstellige Zeilenbauform aus klarem Epoxy • Gruppiert lieferbar
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Q62702-P20
Q62702-P3583
Q62702-P43-S3
Q62702-P43-S3
BPX osram
BPX-81-4
Q62702-P43-S4
GEOY6021
Q62702-P20
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BPW76
Abstract: BPW76A BPW76B
Text: BPW76 Vishay Telefunken Silicon NPN Phototransistor Description BPW76 is a high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its flat glass window makes it ideal for applications with external optics.
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BPW76
BPW76
D-74025
20-May-99
BPW76A
BPW76B
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bpx38 application
Abstract: BPX38 BPX43 BPX38-5
Text: BPX43 Vishay Telefunken Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation
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BPX43
BPX43
D-74025
20-May-99
bpx38 application
BPX38
BPX38-5
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8239
Abstract: Diode IR 8294 TEFT4300 TSUS4300
Text: TEFT4300 Vishay Telefunken Silicon NPN Phototransistor Description TEFT4300 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1 ø 3 mm plastic package. The epoxy package itself is an IR filter, spectrally
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TEFT4300
TEFT4300
900nm)
TSUS4300
D-74025
20-May-99
8239
Diode IR 8294
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NTE3036
Abstract: No abstract text available
Text: NTE3036 Phototransistor Silicon NPN Photo Darlington Light Detector Description: The NTE3036 is a silicon NPN photo Darlington light detector in a TO18 type package designed for use in applications such as industrial inspection, processing and control, counter, sorters, switching
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NTE3036
526-NTE3036
NTE3036
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Untitled
Abstract: No abstract text available
Text: VEMT3700 Vishay Semiconductors Silicon NPN Phototransistor RoHS Compliant, Released for Lead Pb -free Solder Process Description VEMT3700 is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package for surface mounting on printed boards. The
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VEMT3700
VEMT3700
VSML3710
08-Apr-05
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PF42
Abstract: SFM309 SFH309P-2 SFM309P
Text: SFH309P DAYUGHT FILTER SFH309PF SIEMENS SILICON NPN PHOTOTRANSISTOR FE AT U R ES DESCRIPTION • Silicon NPN Phototransistor In Epitaxial Planar Technology The SFH309P/309PF are silicon NPN phototransistors in a standard T1 3 mm plastic package. The SFH309PF has a black daylight filter.
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SFH309P
SFH309PF
SFH309P:
SFH309PF:
SFH487P
SFH309P/309PF
itivity-SFH309P
itivity-SFH309PF
SFH309FVPF
PF42
SFM309
SFH309P-2
SFM309P
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photo transistor til 78
Abstract: ECG3040 ECG3045 ecg 3041 ECG3041 ECG3047 3094 transistor ECG3090 ECG3086 ECG3098
Text: Optoisolators DC Current Transfer Ratio Isolation Voltage Viso Surge V Total Power Pt (mW) 7500 7500 250 250 20 100 ECG3045 NPN Darlington NPN Darlington 7500 3550 7500 7500 250 260 300 300 ECG3081 NPN Transistor 6000 ECG3082 NPN Darlington 6000 ECG3083
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ECG3040
ECG3041
ECG3042
ECG3043
ECG3044
ECG3045
photo transistor til 78
ecg 3041
ECG3047
3094 transistor
ECG3090
ECG3086
ECG3098
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lpt3313
Abstract: led 940nm high power npn phototransistor ligitek LED QW0905-LPT3313 ligitek LED, IR of IR PHOTOTRANSISTOR
Text: LIGITEK LPT3313 NPN SILICON PHOTOTRANSISTOR LED LAMPS SERIES Package Dimension Features High illumination sensitivity Stable characteristics Spectrally and mechanically matched with IR emitter Description The LPT3313 series are silicon nitride passivated NPN planar
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OCR Scan
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LPT3313
LPT3313
20mw/cm
800/M,
940nm
QW0905-LPT3313
10-Aug-2004
led 940nm high power
npn phototransistor
ligitek LED
QW0905-LPT3313
ligitek LED, IR
of IR PHOTOTRANSISTOR
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LPT3311
Abstract: ligitek LED, IR
Text: LIGITEK LPT3311 NPN SILICON PHOTOTRANSISTOR LED LAMPS SERIES Package Dimension Features High illumination sensitivity Stable characteristics Spectrally and mechanically matched with IR emitter Description The LPT3311 series are silicon nitride passivated NPN planar
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OCR Scan
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LPT3311
LPT3311
20mw/cm
800/M,
940nm
QW0905-LPT3311
10-Aug-2004
ligitek LED, IR
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tfk Phototransistor
Abstract: tfk 19 TFK BPW 20 transistor 2394 tfk bpw 76 diode s .* tfk phototransistor array BPW19 tfk 170 diode tfk 65
Text: BPW 19 - BPX 58 Zehnteilige Silizium-NPN-Epitaxial-Planar-Fototransistorzeile 10 Element Silicon NPN Epitaxial Planar Phototransistor Array Anwendungen: A btastgeräte, Lochstreifenleser Applications: Scanning equipments, tape readers Besondere Merkmale: • Kunststoffgehäuse
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led 940nm high power
Abstract: LPT13731
Text: LIGITEK LPT13731 NPN SILICON PHOTOTRANSISTOR LED LAMPS SERIES Package Dimension Features High illumination sensitivity Stable characteristics Spectrally and mechanically matched with IR emitter Description The LPT13731 series are silicon nitride passivated NPN planar
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OCR Scan
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LPT13731
54TYP
LPT13731
20mw/cm
800/M,
940nm
QW0905-LPT13731
led 940nm high power
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LPT3333
Abstract: LED phototransistor IC PACKAGE
Text: LIGITEK LPT3333 NPN SILICON PHOTOTRANSISTOR LED LAMPS SERIES Package Dimension Features High illumination sensitivity Stable characteristics Spectrally and mechanically matched with IR emitter Description The LPT3333 series are silicon nitride passivated NPN planar
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LPT3333
54TYP
LPT3333
20mw/cm
800/M,
940nm
QW0905-LPT3333
10-Aug-2004
LED phototransistor IC PACKAGE
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LED phototransistor IC PACKAGE
Abstract: LPT3330 LPT-333
Text: LIGITEK LPT3330 NPN SILICON PHOTOTRANSISTOR LED LAMPS SERIES Package Dimension Features High illumination sensitivity Stable characteristics Spectrally and mechanically matched with IR emitter Description The LPT3330 series are silicon nitride passivated NPN planar
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OCR Scan
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LPT3330
54TYP
LPT3330
20mw/cm
800/M,
940nm
QW0905-LPT3330
10-Aug-2004
LED phototransistor IC PACKAGE
LPT-333
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PH101
Abstract: No abstract text available
Text: SEC PHOTO TRANSISTOR ELECTRON DEVICE PH101 NPN EPITAXIAL DARLINGTON PHOTOTRANSISTOR PHOTO DETECTOR -N E P O C SERIES - DESCRIPTION The PH101 is a miniature NPN sillicon phototransistor having exceptionally stable characteristics and high illuminance sensiti
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PH101
PH101
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