NPN NSDU01A Search Results

NPN NSDU01A Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
CA3046	Rochester Electronics LLC	CA3046 - General Purpose NPN Transistor Array
CA3083Z-G	Rochester Electronics LLC	CA3083 - General Purpose High Current NPN Transistor Array
ISL73096EHVF	Renesas Electronics Corporation	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
ISL73096RHVF	Renesas Electronics Corporation	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

NPN NSDU01A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NSD102 Abstract: D42C5 040e5 NSE180 2N4945 NSE871 d42c2 TO-202 transistor NPN NSDU05 2N6714 Text: NATL SEMICOND DISCRETE 5SE D • bSG1130 Ci a377a4 T ■ T-27-0! NPN Medium Power Transistors by Ascending Vceo Part No. Hfe a lc /V ce Vceo (V) NSE871 TN1711 ’ Vce (sat) (V) Ic/lb M ax (mA)/(mA) Min M ax (m A/V) 50 40 300 25/20 500/10 1.5 150 Package	OCR Scan	bSG1130 Cia377a4 T-21-0! NSE871 TN1711 O-202 O-237 MPS6561 MSP6560 2N5449 NSD102 D42C5 040e5 NSE180 2N4945 d42c2 TO-202 transistor NPN NSDU05 2N6714	PDF
NSE180 Abstract: 2N4945 D40D8 NSDU02 nsd102 NSDU05 Text: NATL SEMICOND DISCRETE SEE » • bSG1130 GG377fl4 T ■ T-27-ÔI NPN Medium Power Transistors by Ascending Vceo Part No. Hfe a lc/Vce (V) NSE871 TN1711 • Min Max (mA/V) Vea (sat) (V) Max 50 40 300 25/20 500/10 1.5 150 TO-202 TO-237 Vceo lc/lb (mA)/(mA)	OCR Scan	bSG1130 GG377fl4 NSE871 TN1711 MPS6561 MSP6560 2N5449 2N6714 92PU01 D40D1 NSE180 2N4945 D40D8 NSDU02 nsd102 NSDU05	PDF
"NPN Transistors" 2n3567 Abstract: NSE459 NSDU05 NSD458 2N6718 TO-237 2N3569 2N6593 2N5336 2N3567 MPSW06 Text: NPN Transistors NATL S e m iS o n d u c t o r VCER* v CEO V Min M e d iu m P o w e r 'c e s ' hFE •cBOg, VCB @ *C & VCE (nA) (V) Min Max (mA) (V) Max VCbo (V) Min 2N699 TO-39 120 60 5 2 60 40 2N1613 also Avail. JAN/TX/V Versions TO-5 75 35 7 10 60 20 40	OCR Scan	2N699 2N1613 2N1711 2N1890 to-202 tn3742 to-237 "NPN Transistors" 2n3567 NSE459 NSDU05 NSD458 2N6718 TO-237 2N3569 2N6593 2N5336 2N3567 MPSW06	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

NSD102

Abstract: D42C5 040e5 NSE180 2N4945 NSE871 d42c2 TO-202 transistor NPN NSDU05 2N6714
Text: NATL SEMICOND DISCRETE 5SE D • bSG1130 Ci a377a4 T ■ T-27-0! NPN Medium Power Transistors by Ascending Vceo Part No. Hfe a lc /V ce Vceo (V) NSE871 TN1711 ’ Vce (sat) (V) Ic/lb M ax (mA)/(mA) Min M ax (m A/V) 50 40 300 25/20 500/10 1.5 150 Package

OCR Scan

bSG1130 Cia377a4 T-21-0! NSE871 TN1711 O-202 O-237 MPS6561 MSP6560 2N5449 NSD102 D42C5 040e5 NSE180 2N4945 d42c2 TO-202 transistor NPN NSDU05 2N6714

PDF

NSE180

Abstract: 2N4945 D40D8 NSDU02 nsd102 NSDU05
Text: NATL SEMICOND DISCRETE SEE » • bSG1130 GG377fl4 T ■ T-27-ÔI NPN Medium Power Transistors by Ascending Vceo Part No. Hfe a lc/Vce (V) NSE871 TN1711 • Min Max (mA/V) Vea (sat) (V) Max 50 40 300 25/20 500/10 1.5 150 TO-202 TO-237 Vceo lc/lb (mA)/(mA)

OCR Scan

bSG1130 GG377fl4 NSE871 TN1711 MPS6561 MSP6560 2N5449 2N6714 92PU01 D40D1 NSE180 2N4945 D40D8 NSDU02 nsd102 NSDU05

PDF

"NPN Transistors" 2n3567

Abstract: NSE459 NSDU05 NSD458 2N6718 TO-237 2N3569 2N6593 2N5336 2N3567 MPSW06
Text: NPN Transistors NATL S e m iS o n d u c t o r VCER* v CEO V Min M e d iu m P o w e r 'c e s ' hFE •cBOg, VCB @ *C & VCE (nA) (V) Min Max (mA) (V) Max VCbo (V) Min 2N699 TO-39 120 60 5 2 60 40 2N1613 also Avail. JAN/TX/V Versions TO-5 75 35 7 10 60 20 40

OCR Scan

2N699 2N1613 2N1711 2N1890 to-202 tn3742 to-237 "NPN Transistors" 2n3567 NSE459 NSDU05 NSD458 2N6718 TO-237 2N3569 2N6593 2N5336 2N3567 MPSW06

PDF