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    NPN MARKING R25 Search Results

    NPN MARKING R25 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    NPN MARKING R25 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER


    Original     		PDF 2SC3356 OT-23 QW-R206-024

    2SC3356

    Abstract: marking r25 sot23 r25 marking NPN R25 QW-R206-024 2SC3356 R25 sot-23
    Text: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER


    Original     		PDF 2SC3356 OT-23 QW-R206-024 2SC3356 marking r25 sot23 r25 marking NPN R25 2SC3356 R25 sot-23

    2SC3356R25

    Abstract: 2SC3356 2SC3356R 2SC3356 r25 r25 marking R25 2sc3356 2SC3356 R25 sot-23
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC3356 Features • • • Low noise and high gain High power gain Marking Code: 2SC3356=R25 NPN Silicon Epitaxial Transistors Maximum Ratings


    Original     		PDF 2SC3356 2SC3356 OT-23 2SC3356R25 2SC3356R 2SC3356 r25 r25 marking R25 2sc3356 2SC3356 R25 sot-23

    bq 8050

    Abstract: HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ
    Text: 目 录 CONTENTS Page 产品索引（按字母顺序） ALPHANUMERIC INDEX A 产品目录表（按电性能） TABLE OF CONTENTS G 小信号开关二极管 Small Signal Switching Diodes G 小信号肖特基二极管 Small Signal Schottky Diodes H 双极型晶体管


    Original     		PDF OD-123 OD-123 OD-323 OD-323 OD-523 OD-523 OT-23 OT-23 OT-323 OT-323 bq 8050 HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original     		PDF huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


    Original     		PDF OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6

    2SC3356 Application Note

    Abstract: 2sc3356 2SC3356R25 2SC3356 r25
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC3356 Features • • • • Low noise and high gain High power gain Marking Code: 2SC3356=R25 Case Material: Molded Plastic. UL Flammability


    Original     		PDF 2SC3356 2SC3356 OT-23 2SC3356 Application Note 2SC3356R25 2SC3356 r25

    marking r25 NPN

    Abstract: NPN R25 transistor code R24 R24 marking code transistor SOT R23 npn marking r25 Transistor R25 R24 marking SOT R25 2SC4226W
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES 2SC4226W Pb z Low noise. z High gain. z Power dissipation. PC=150mW Lead-free APPLICATIONS z High frequency low noise amplifier. SOT-323 ORDERING INFORMATION Type No.


    Original     		PDF 2SC4226W 150mW) OT-323 r23/r24/r25 BL/SSSTF042 marking r25 NPN NPN R25 transistor code R24 R24 marking code transistor SOT R23 npn marking r25 Transistor R25 R24 marking SOT R25 2SC4226W

    diac kr 206

    Abstract: BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE
    Text: PRODUCT CATALOG 2015 MCC TM Micro Commercial Components COMPLETE DISCRETE SEMICONDUCTORS SOLUTIONS POWERED BY SERVICE MCCSEMI.COM MCC TM Micro Commercial Components TM Where to Buy Micro Commercial Components www.arrownac.com www.digikey.com www.futureelectronics.com


    Original     		PDF element14 diac kr 206 BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE

    transistor code R24

    Abstract: R24 marking code transistor Transistor R25 marking r25 NPN r25 transistor SOT R23 SOT R25 marking r25 NPN R25 R24 marking DATASHEET
    Text: 2SC4226 NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE SOT-323 The 2SC4226 is a Low supply voltage transistor designed for VHF, UHF low noise amplifier


    Original     		PDF 2SC4226 OT-323 2SC4226 01-June-2002 transistor code R24 R24 marking code transistor Transistor R25 marking r25 NPN r25 transistor SOT R23 SOT R25 marking r25 NPN R25 R24 marking DATASHEET

    FH9014

    Abstract: FHT9018 FHT1815G FHT3356 FHT599 FHT63 FHT64 FHT807-16 FHT807-25 FHT817-16
    Text: SOT-23 三极管（SOT-23 TRANSISTORS） 型号 TYPE VCBO V VCEO V IC mA PD mW FHT20 FHT31 FHT63 FHT64 FHT599 FHT807-16 FHT807-25 FHT807-40 FHT817-16 FHT817-25 FHT817-40 FHT846A FHT846B FHT847A FHT847B FHT847C FHT848A FHT848B FHT848C FHT849A FHT849B FHT849C


    Original     		PDF OT-23 FHT20 FHT31 FHT63 FHT64 FHT599 FHT807-16 FHT807-25 FHT807-40 FH9014 FHT9018 FHT1815G FHT3356 FHT599 FHT63 FHT64 FHT807-16 FHT807-25 FHT817-16

    marking r25

    Abstract: transistor amplifier VHF/UHF NPN R25 hFE CLASSIFICATION Marking 24 2SC33 Transistor R25 R24 marking code transistor R24 marking DATASHEET SOT R23 SOT R25
    Text: 2SC3356F NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES A Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain


    Original     		PDF 2SC3356F OT-323 01-June-2002 marking r25 transistor amplifier VHF/UHF NPN R25 hFE CLASSIFICATION Marking 24 2SC33 Transistor R25 R24 marking code transistor R24 marking DATASHEET SOT R23 SOT R25

    2SC4226

    Abstract: No abstract text available
    Text: 2SC4226 0.1A , 20V NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE ● ● ● SOT-323 Low noise High gain Power dissipation. PC=150mW A L 3 3 C B Top View


    Original     		PDF 2SC4226 OT-323 150mW) 2SC4226-P 2SC4226-Q 2SC4226-R 23-Apr-2013 2SC4226

    2SC3356

    Abstract: TRANSISTOR 2sc3356 transistor 1205 s-parameter RF POWER TRANSISTOR NPN transistor marking r25 RF TRANSISTOR 10GHZ 1205 transistor NPN RF Amplifier RF POWER TRANSISTOR NPN RF TRANSISTOR 10GHZ low noise
    Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3356 DESCRIPTION •Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz


    Original     		PDF 2SC3356 2SC3356 TRANSISTOR 2sc3356 transistor 1205 s-parameter RF POWER TRANSISTOR NPN transistor marking r25 RF TRANSISTOR 10GHZ 1205 transistor NPN RF Amplifier RF POWER TRANSISTOR NPN RF TRANSISTOR 10GHZ low noise

    transistor R24

    Abstract: SOT R23 npn marking r25 marking r25 transistor marking r25 NPN 2sc3356 high power npn UHF transistor 2SC3356 R25 sot-23
    Text: 2SC3356 SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features 2.80 — Low noise amplifier at VHF, UHF and CATV band. — Low Noise and High Gain — High Power Gain 1.60 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF 2SC3356 OT-23-3L OT-23-3L width350s, transistor R24 SOT R23 npn marking r25 marking r25 transistor marking r25 NPN 2sc3356 high power npn UHF transistor 2SC3356 R25 sot-23

    2SC3356 Application Note

    Abstract: 2SC3356 h 125 tam SOT R23 marking r25 sot23 r25 q 2SC3356 R25 sot-23
    Text: 2SC3356 NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 A


    Original     		PDF 2SC3356 OT-23 01-Jun-2002 2SC3356 Application Note 2SC3356 h 125 tam SOT R23 marking r25 sot23 r25 q 2SC3356 R25 sot-23

    2SC3356

    Abstract: R24 marking DATASHEET r25 marking 2SC3356 Application Note Low Noise uhf transistor NPN R25 marking r25 sot23 r25 q
    Text: 2SC3356 NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES    SOT-23 Low Noise Amplifier at VHF, UHF and CATV band Low Noise and High Gain High Power Gain


    Original     		PDF 2SC3356 OT-23 16-Oct-2009 2SC3356 R24 marking DATASHEET r25 marking 2SC3356 Application Note Low Noise uhf transistor NPN R25 marking r25 sot23 r25 q

    2SC3356

    Abstract: R25 2sc3356 marking r25 NPN 2SC3356-T1B NE85633 PU10209EJ02V0DS
    Text: NPN SILICON RF TRANSISTOR NE85633 / 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz


    Original     		PDF NE85633 2SC3356 NE85633-A 2SC3356 NE85633-T1B-A 2SC3356-T1B R23/Q R24/R R25/S PU10209EJ02V0DS R25 2sc3356 marking r25 NPN PU10209EJ02V0DS

    2SC4226-T1

    Abstract: 2SC4226-T1-A ne85630 NE85630-A 2SC4226T1a transistor s2p Transistor R25 NE85630A 2SC4226-A r23 transistor
    Text: A Business Partner of Renesas Electronics Corporation. Preliminary NE85630 / 2SC4226 Data Sheet R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor


    Original     		PDF NE85630 2SC4226 R09DS0022EJ0200 2SC4226 S21e2 SC-70) 2SC4226-T1 2SC4226-T1-A NE85630-A 2SC4226T1a transistor s2p Transistor R25 NE85630A 2SC4226-A r23 transistor

    E3F2-7L-P1

    Abstract: E3F2-3LZ E3F27LP1 E3F27DB4P1 IEC60529 E3F27DC4P1 E3F2-7DB4-P1 IEC-60529 E3F2-7dc4 E3F2-7DC4-P1
    Text: Photoelectric Sensor E3F2 Threaded Cylindrical Photoelectric Sensors with Built-in Amplifier for Use as an Optical Proximity Sensor M18 DIN-sized cylindrical housing Housing materials: plastic, nickel-brass, and stainless steel Improved degree of protection


    Original     		PDF E224-E1-6 0699-3M E3F2-7L-P1 E3F2-3LZ E3F27LP1 E3F27DB4P1 IEC60529 E3F27DC4P1 E3F2-7DB4-P1 IEC-60529 E3F2-7dc4 E3F2-7DC4-P1

    transistor code R24

    Abstract: R24 marking code transistor SOT R23 Transistor R25 r25 transistor transistor R24 r23 transistor SOT R25 2SC3356W R24 transistor
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC3356W FEATURES z Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz z Pb Lead-free High power gain:MAG=13dB TYP. @VCE=10V.IC=20mA,f=1.0GHz APPLICATIONS


    Original     		PDF 2SC3356W OT-323 R23/R24/R25 200taxial BL/SSSTF001 transistor code R24 R24 marking code transistor SOT R23 Transistor R25 r25 transistor transistor R24 r23 transistor SOT R25 2SC3356W R24 transistor

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60

    GE 2646

    Abstract: 2SC3356 r25 CD/GE S 2646
    Text: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS T he 2 S C 3 3 5 6 is an NPN silico n ep ita xia l tra n sisto r d e sig n e d for low Units: mm noise a m p lifie r at VH F, U H F and C A T V band.


    OCR Scan     		PDF 2SC3356 2SC3356 S22e-FREQUENCY GE 2646 2SC3356 r25 CD/GE S 2646

    transistor NEC D 588

    Abstract: IC nec 555 nec d 588 marking 544 low noise amplifier ZS12 nec 501 t nec marking 2sc3356 R25 2sc3356
    Text: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.


    OCR Scan     		PDF 2SC3356 2SC3356 transistor NEC D 588 IC nec 555 nec d 588 marking 544 low noise amplifier ZS12 nec 501 t nec marking 2sc3356 R25 2sc3356