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    NPN LOW SATURATION TO-220 HIGH GAIN Search Results

    NPN LOW SATURATION TO-220 HIGH GAIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    NPN LOW SATURATION TO-220 HIGH GAIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13005ND56 TRANSISTOR NPN TO-220 FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1. BASE 2. COLLECTOR


    Original     		PDF O-220 3DD13005ND56 O-220 500mA UI9600)

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13005ND66 TO-220 TRANSISTOR NPN FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1. BASE 2. COLLECTOR


    Original     		PDF O-220 3DD13005ND66 O-220 200mA 250mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13005N96 TRANSISTOR NPN TO-220 FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1. BASE 2. COLLECTOR


    Original     		PDF O-220 3DD13005N96 O-220 250mA UI9600)

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2137A TO – 220 TRANSISTOR NPN 1. BASE FEATURES z High DC Current Gain z Low Collector to Emitter Saturation Voltage VCE(sat) z Allowing Automatic Insertion with Radial Taping


    Original     		PDF O-220 2SD2137A 10MHz

    TIP111

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TIP111 DARLINGTON TRANSISTOR NPN TO-220 FEATURES z High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) z Low Collector-Emitter Saturation Voltage z Industrial Use


    Original     		PDF O-220 TIP111 O-220 TIP111

    darlington transistor NPN

    Abstract: TIP110 60V transistor npn ic2a
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TIP110 DARLINGTON TRANSISTOR NPN TO-220 FEATURES z High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) z Low Collector-Emitter Saturation Voltage z Industrial Use


    Original     		PDF O-220 TIP110 O-220 darlington transistor NPN TIP110 60V transistor npn ic2a

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TIP110 DARLINGTON TRANSISTOR NPN TO-220 FEATURES z High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) z Low Collector-Emitter Saturation Voltage z Industrial Use


    Original     		PDF O-220 TIP110 O-220

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TIP111 DARLINGTON TRANSISTOR NPN TO-220 FEATURES z High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) z Low Collector-Emitter Saturation Voltage z Industrial Use


    Original     		PDF O-220 TIP111 O-220

    TIP112

    Abstract: darlington transistor NPN
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TIP112 DARLINGTON TRANSISTOR NPN TO-220 1. BASE FEATURES z High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) z Low Collector-Emitter Saturation Voltage z Industrial Use


    Original     		PDF O-220 TIP112 O-220 TIP112 darlington transistor NPN

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2137 TO-220 TRANSISTOR NPN FEATURES z High forward current transfer ratio hFE which has satisfactory linearity z Low collector to emitter saturation voltage VCE(sat)


    Original     		PDF O-220 2SD2137 O-220 10MHz 375mA

    2SD2137

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2137 TO-220 TRANSISTOR NPN FEATURES z High forward current transfer ratio hFE which has satisfactory linearity z Low collector to emitter saturation voltage VCE(sat)


    Original     		PDF O-220 2SD2137 O-220 10MHz 375mA 2SD2137

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TIP112 DARLINGTON TRANSISTOR NPN TO-220 1. BASE FEATURES z High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) z Low Collector-Emitter Saturation Voltage z Industrial Use


    Original     		PDF O-220 TIP112 O-220

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2012 TO – 220 TRANSISTOR NPN 1. BASE FEATURES z High DC Current Gain z Low Saturation Voltage z High Power Dissipation 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-220 2SD2012

    2SD2137

    Abstract: No abstract text available
    Text: 2SD2137 NPN TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 1 Features — 2 3 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping —


    Original     		PDF 2SD2137 O-220 O-220 375mA 10MHz

    TIP112

    Abstract: Darlington TRANSISTOR NPN
    Text: TIP112 TO-220 Darlington Transistor NPN TO-220 1. BASE 2. COLLECTOR 1 Features — 2 3. EMITTER 3 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use — — MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF TIP112 O-220 O-220 TIP112 Darlington TRANSISTOR NPN

    darlington transistor NPN

    Abstract: No abstract text available
    Text: TIP111 TO-220 Darlington Transistor NPN TO-220 1. BASE 2. COLLECTOR 3. EMITTER Features — — — 1 2 3 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF TIP111 O-220 O-220 darlington transistor NPN

    2sa1012

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., 2SA1012 NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION . FEATURES *Low collector saturation voltage VCE sat =-0.4V(max.) at Ic=-3A *High speed switching time: tS=1.0µs(Typ.) *Complementary to 2SC2562 1 TO-220


    Original     		PDF 2SA1012 2SC2562 O-220 2SA1012L 2SA1012-TA3-T 2SA1012L-TA3-T O-220 QW-R209-008 2sa1012

    2SD1691

    Abstract: transistor 2sd1691 2SB1151 2SD1691L 2SD*1691
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT 1 TO-220 FEATURES *High Power Dissipation *Complementary to 2SB1151 1 TO-126 1 TO-126C *Pb-free plating product number:2SD1691L ORDERING INFORMATION


    Original     		PDF 2SD1691 O-220 2SB1151 O-126 O-126C 2SD1691L 2SD1691-x-T60-K 2SD1691L-x-T60-K 2SD1691-x-T6C-K 2SD1691L-x-T6C-K 2SD1691 transistor 2sd1691 2SB1151 2SD1691L 2SD*1691

    NPN Transistor 8A

    Abstract: TIP102 Darlington transistor
    Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP105/106/107


    Original     		PDF TIP100/101/102 O-220 TIP105/106/107 TIP100 TIP101 TIP102 NPN Transistor 8A TIP102 Darlington transistor

    TIP112

    Abstract: TIP110 TIP111 NPN Transistor VCEO 80V 100V TIP110 transistor NPN Transistor TO220 VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON TIP112 transistor NPN Transistor VCEO 80V 100V DC Current gain 100 Silicon NPN Darlington transistor TIP110
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP110/111/112 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 Complementary to TIP115/116/117


    Original     		PDF TIP110/111/112 O-220 TIP115/116/117 TIP111 TIP112 TIP110 TIP112 TIP110 TIP111 NPN Transistor VCEO 80V 100V TIP110 transistor NPN Transistor TO220 VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON TIP112 transistor NPN Transistor VCEO 80V 100V DC Current gain 100 Silicon NPN Darlington transistor TIP110

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL TIP110/111/112 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP115/116/117


    Original     		PDF TIP110/111/112 O-220 TIP115/116/117 TIP110 TIP111 TIP112 15oduct

    2SD1691

    Abstract: 2SD1691L 2SB1151 TO-220F1 NPN
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT „ 1 TO-220 FEATURES *High Power Dissipation *Complementary to 2SB1151 1 TO-220F1 1 TO-126 1 TO-126C „ ORDERING INFORMATION Ordering Number Lead Free Plating


    Original     		PDF 2SD1691 O-220 2SB1151 O-220F1 O-126 O-126C 2SD1691L-x-T60-K 2SD1691G-x-T60-K 2SD1691L-x-T6C-K 2SD1691G-x-T6C-K 2SD1691 2SD1691L 2SB1151 TO-220F1 NPN

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP110/111/112 HIGH DC CURRENT GAIN MIN hfE=1000 @ V ce= 4V, lc = 1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO -220 Complementary to TIP115/116/117


    OCR Scan     		PDF TIP110/111/112 TIP115/116/117 TIP110 TIP111 TIP112 GG2SS65

    TIP112

    Abstract: transistor tip111
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP110/111/112 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCe=4V, lc=1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 Complementary to TIP115/116/117


    OCR Scan     		PDF TIP110/111/112 TIP115/116/117 TIP110 TIP111 TIP112 TIP112 transistor tip111