NPN J3Y Search Results

NPN J3Y Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
MX0912B251Y	Rochester Electronics LLC	MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die)
CA3083Z-G	Rochester Electronics LLC	CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY
CA3046	Rochester Electronics LLC	RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN
ISL73096EHVF	Renesas Electronics Corporation	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

NPN J3Y Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
j3y transistor Abstract: .j3y SOT-23 J3Y .j3y transistor S8050 SOT-23 transistor J3Y J3Y Transistor MARKING SOT-23 J3Y npn J3Y marking MARKING J3Y Text: S8050 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to S8550 Collector Current: IC=0.5A MARKING: J3Y Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value	Original	PDF	S8050 OT-23 OT-23 S8550 500mA 30MHz j3y transistor .j3y SOT-23 J3Y .j3y transistor S8050 SOT-23 transistor J3Y J3Y Transistor MARKING SOT-23 J3Y npn J3Y marking MARKING J3Y
j3y transistor Abstract: .j3y SOT-23 J3Y S8050 SOT-23 transistor J3Y s8050 MARKING J3Y .j3y transistor BR S8050 transistor S8050 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors S8050 SOT-23 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector Current: IC=0.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	PDF	OT-23 S8050 OT-23 S8550 500mA 30MHz j3y transistor .j3y SOT-23 J3Y S8050 SOT-23 transistor J3Y s8050 MARKING J3Y .j3y transistor BR S8050 transistor S8050
j3y transistor Abstract: SOT-23 J3Y S8050 SOT-23 transistor J3Y S8050 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors S8050 SOT-23 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector Current: IC=1.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	PDF	OT-23 S8050 OT-23 S8550 500mA 30MHz j3y transistor SOT-23 J3Y S8050 SOT-23 transistor J3Y S8050
SOT-23 J3Y Abstract: j3y transistor transistor j3y Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors S8050 SOT-23 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector Current: IC=0.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	PDF	OT-23 S8050 OT-23 S8550 500mA 30MHz SOT-23 J3Y j3y transistor transistor j3y
j3y transistor Abstract: SOT-23 J3Y S8050 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors S8050 SOT-23 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector Current: IC=0.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	PDF	OT-23 S8050 OT-23 S8550 500mA 30MHz j3y transistor SOT-23 J3Y S8050
j3y transistor Abstract: transistor j3y MARKING J3Y S8050LT1 SOT-23 J3Y s8050l S8050LT1-J3Y sot-23 Marking J3Y transistors marking HK S8050LT1 J3Y Text: PLASTIC-ENCAPSULATE TRANSISTORS S8050LT1 S8050LT1 TRANSISTOR（ NPN ） SOT— —23 FEATURES Power dissipation 0.3 PCM : Collector current 0.5 ICM : Collector-base voltage V BR CBO : 40 W（Tamb=25℃） 1. BASE A 2. EMITTER 3. COLLECTOR V CHARACTERISTICS（	Original	PDF	S8050LT1 OT--23 500mA 100mA 30MHz S8050LT1 j3y transistor transistor j3y MARKING J3Y SOT-23 J3Y s8050l S8050LT1-J3Y sot-23 Marking J3Y transistors marking HK S8050LT1 J3Y
S8050 Abstract: .j3y S8050 SOT-23 2S8050 S8050 npn SOT-23 J3Y S8050 j3y j3y transistor s8050 d h j3y transistor parameters Text: S8050 NPN Silicon Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES 3 Complimentary to S8550 SOT-23 Collector 1 Base Collector Current: IC=0.5A 2 Emitter A L 3 B S Top View	Original	PDF	S8050 OT-23 S8550 500mA 01-Jun-2007 30MHz S8050 .j3y S8050 SOT-23 2S8050 S8050 npn SOT-23 J3Y S8050 j3y j3y transistor s8050 d h j3y transistor parameters
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 S8050LT1 1. BASE TRANSISTOR（ NPN ） 2. EMITTER 3. COLLECTOR Parameter Symbol Test ０．９５０．４０．９５１．９２．４１．３２．９	Original	PDF	OT-23 S8050LT1 500mA 30MHz S8050LT1
j3y smd Abstract: SOT-23 J3Y SOT-23 J3Y npn Text: Transistors SMD Type NPN Transistors KST8050S SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 Collector Current: IC=0.5A 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter	Original	PDF	KST8050S OT-23 j3y smd SOT-23 J3Y SOT-23 J3Y npn
TPT5609 Abstract: SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A Text: MCC TM Micro Commercial Components SMALL SIGNAL &POWER TRANSISTORS VCEO Part No hFE @ VCE & IC IC Polarity VCE sat & VBE(sat) @ IC & IB fT @ VCE & IC VCE IC VCE(sat) VBE(sat) IC IB fT Min. fT Max. VCE IC hFE hFE Max. (V) (mA) Max.(V) Max.(V) (mA) (mA) (MHz)	Original	PDF	2N3904 2N3906 2N4124 2N4400 2N4401 2N4402 2N4403 2N5401 2N5551 2N6517 TPT5609 SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A
MMS8050-L Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664 Text: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.	Original	PDF	MJD31C MJD32C MJD42C MMJD2955 MMJD3055 MMS8050-L 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
Y2 transistor Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882 Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123	Original	PDF	huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Transistor S8550 2TY Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6 Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250	Original	PDF	OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
bq 8050 Abstract: HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ Text: 目录 CONTENTS Page 产品索引（按字母顺序） ALPHANUMERIC INDEX A 产品目录表（按电性能） TABLE OF CONTENTS G 小信号开关二极管 Small Signal Switching Diodes G 小信号肖特基二极管 Small Signal Schottky Diodes H 双极型晶体管	Original	PDF	OD-123 OD-123 OD-323 OD-323 OD-523 OD-523 OT-23 OT-23 OT-323 OT-323 bq 8050 HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ

j3y transistor Abstract: SOT-23 J3Y SOT-23 J3Y npn .j3y sot-23 Marking J3Y J3Y marking code .j3y transistor MARKING J3Y J3Y marking J3Y Transistor MARKING Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMS8050 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.3Watts Tamb=25 OC of Power Dissipation. Collector-current 0.5A	Original	PDF	MMS8050 OT-23 -55OC OT-23 100uAdc, 40Vdc, 20Vdc, j3y transistor SOT-23 J3Y SOT-23 J3Y npn .j3y sot-23 Marking J3Y J3Y marking code .j3y transistor MARKING J3Y J3Y marking J3Y Transistor MARKING
j3y transistor Abstract: J3Y marking code j3y transistor parameters SOT-23 J3Y MMS8050 .j3y transistor j3y sot-23 Marking J3Y J3Y diode marking J3Y Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMS8050 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.3Watts Tamb=25 OC of Power Dissipation. Collector-current 0.5A Collector-base Voltage 40V	Original	PDF	MMS8050 OT-23 -55OC OT-23 20mAdc, 30MHz) j3y transistor J3Y marking code j3y transistor parameters SOT-23 J3Y MMS8050 .j3y transistor j3y sot-23 Marking J3Y J3Y diode marking J3Y
j3y transistor Abstract: J3Y marking code SOT-23 J3Y sot-23 Marking J3Y j3y transistor parameters transistor J3Y MMS8050 .j3y .j3y transistor J3Y diode Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMS8050 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.3Watts Tamb=25 OC of Power Dissipation. Collector-current 0.5A	Original	PDF	MMS8050 OT-23 -55OC OT-23 20mAdc, 30MHz) j3y transistor J3Y marking code SOT-23 J3Y sot-23 Marking J3Y j3y transistor parameters transistor J3Y MMS8050 .j3y .j3y transistor J3Y diode
2SC2116 Abstract: TRANSISTOR S 813 Text: ^j3yNPNx^5>^T b7^-tm^yvx5> »ILICON NPN EPITAXIAL PLANAR TRANSISTOR 2 2116 sc TENTATIVE O VHF~UHFffi#*Ji<gffi O VHF~UHF Low Noise Amplifier Application • 'J' S W 11 S • Mini-Package 2.2mm0 —a- KJg 2.2mm0mold type MAXIMUM RATINGS T a = 25°C) CHARACTERISTIC SYMBOL RATING	OCR Scan	PDF	2sc2116 500MHz 2SC2116 TRANSISTOR S 813
toshiba sb-500 Abstract: 2SC387A 387AG ISS simbol CC335 2sc 200mhz 2.T transistor planar Text: ^j3yNPNx^5>^ì/j> by\^-tB^yv^9 2s c 387Ag SILICON NPN EPITAXIAL PLANAR TRANSISTOR i# te ffi O VHF » o uhf * 56 m m INDUSTRIAL APPLICATIONS Unit in mm o VHF Amplifier Applications o UHF Oscillator Applications h =? v y a y IS $. S i * ' ¡5 V ' o f T = 1000MHz Typ. )	OCR Scan	PDF	1000MHz 95MAX. 2sc387AÂ 387AG toshiba sb-500 2SC387A 387AG ISS simbol CC335 2sc 200mhz 2.T transistor planar
TRANSISTOR 2SC Abstract: 2SC387A transistor 2sc 387A 30MHZ V600 f630 7500f my60 Text: ^'J3yNPNx\^5i^p \,7u-tmhÿyvx5> 2 s c 387A SILICON NPN EPITAXIAL PLANAR TRANSISTOR O TUt UHF f i - í ¡ o TV UHF Oscillator Applications Unit in mm 2f58MAX. Ì y 's ï \ fT = 1200MHz Typ.) 9 3 0 M H z -C + a - 4 ^ J S t B ! P0 = 8mW( Typ. )(f= 930MHz) MAXIMUM RATINGS	OCR Scan	PDF	2f58MAX. 1200MHz 930MHz) TRANSISTOR 2SC 2SC387A transistor 2sc 387A 30MHZ V600 f630 7500f my60
2SC398 Abstract: 2SC399 IC c399 TB9.C c3982 VAAC Text: 25C398 2 s c 399 O fn ; vhp t ^ z;'J3yNPNI.£5>*^J> l7ls-t]&^yVZ5> SILICON NPN EPITAXIAL PLANAR TRANSISTOR ffl R FifiWffl ; 8SC398 2SC3 99 Unit in mm -ê- ffl; 2 Í& 8 M A X . o TV V H F Tuner A p p l ications RF Amplifier M ixer • M m m r - r 0 4 .9 5 M A X .	OCR Scan	PDF	2SC398 2SC399 8SC398 200MHz) 3SC399 800MHz) 2SC399 IC c399 TB9.C c3982 VAAC
10ID Abstract: 12cw10 Text: ^j3yNPNx^s>^Pii7[y-i-m^y'Jx SILICON NPN EPITAXIAL PLANAR TRANSIST O 40 O H eo o m m en d ed f o r Low V o l t a g e ( 1 0 ~ 1 4 V , . 40011H z B and P ow er A m p lif ie r A p p lic a tio n s • H i* ! ï (M in . ) , 9 d B C llin . ) P o w e r O u t p u t = 3W ( M i a )	OCR Scan	PDF	40011Hz 2sc2104 10ID 12cw10
RF Transistor s-parameter at 4GHz Abstract: 2SC1551 2SC155 s-parameter RF POWER TRANSISTOR NPN TRANSISTOR 2SC Text: $''J3yNPNT£5>*^J’il7 [ s -tB ^ y V Z 5 > 2s c 1551 SILICON NPN EPITAXIAL PLANAR TRANSISTOR O i II Xi ffl U H F -C -v o -r y + v r m INDUSTRIAL APPLICATIONS O UHF~C O H igh S peed S w itc h in g A p p l i c a t i o n s Band L o w N o ìb » A m p l i f i e r A p p l i c a t i o n s	OCR Scan	PDF	2SC1551 RF Transistor s-parameter at 4GHz 2SC1551 2SC155 s-parameter RF POWER TRANSISTOR NPN TRANSISTOR 2SC
MA62 Abstract: thyristor dk Si NPN Text: MA62 MA62 v l +M V if NPN 7 l s * —j-3y. h ]J N PN Planar Trigger Device h U if^ -f/T r ig g e r Device for Thyristor S /F e a tu r e s • VB0 X I 'o /S y m m e tr ic a l break o v er voltage • V0 < , I bo ^ ' . h ^ ' o / H i g h o u tp u t voltage, low breakover	OCR Scan	PDF	850max. 560max. --24min 068//F MA62 thyristor dk Si NPN

NPN J3Y Search Results

NPN J3Y Result Highlights (5)

NPN J3Y Datasheets Context Search

j3y transistor

j3y transistor

j3y transistor

SOT-23 J3Y

j3y transistor

j3y transistor

S8050

Untitled

j3y smd

TPT5609

MMS8050-L

Y2 transistor

Transistor S8550 2TY

bq 8050

j3y transistor

j3y transistor

j3y transistor

2SC2116

toshiba sb-500

TRANSISTOR 2SC

2SC398

10ID

RF Transistor s-parameter at 4GHz

MA62