2N6259 amplifier
Abstract: 2N6259 "Solenoid Drivers" 2N6259 equivalent high power npn 8A NPN Transistor 8A 2N6259 inchange
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6259 DESCRIPTION •DC Current Gain: hFE= 15-60@IC= 8A ·High Power Dissipation : PD= 150W@ IC= 15A APPLICATIONS ·Designed for high power audio, disk head positioners, linear
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2N6259
100mA
2N6259 amplifier
2N6259
"Solenoid Drivers"
2N6259 equivalent
high power npn 8A
NPN Transistor 8A
2N6259 inchange
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2SC2922
Abstract: 2SA1216 IC-25 DSA0016507
Text: 2SC2922 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1216 ICBO Ratings Unit VCB=180V 100max µA VEB=5V 100max µA IC=25mA 180min V 24.4±0.2 180 V IEBO VEBO 5 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8V IB 5 A VCE(sat) IC=8A, IB=0.8A 2.0max V PC
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2SC2922
2SA1216)
MT-200
100max
180min
50typ
250typ
30min
2SC2922
2SA1216
IC-25
DSA0016507
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2SC2922
Abstract: transistor 2sc2922 2SA1216 2sc2922 safe operating area
Text: 2SC2922 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1216 Symbol ICBO Conditions 2SC2922 Unit VCB=180V 100max µA VEB=5V 100max µA IC=25mA 180min V 24.4±0.2 VCEO 180 V IEBO VEBO 5 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8V IB 5 A VCE(sat) IC=8A, IB=0.8A
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2SC2922
2SA1216)
MT-200
100max
180min
50typ
250typ
2SC2922
transistor 2sc2922
2SA1216
2sc2922 safe operating area
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transistor 2sc3858
Abstract: 2SC3858 2sc3858 transistor 2sa1494 characteristics 2SC3858 2sc3858 safe operating area
Text: 2SC3858 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1494 200 V ICBO VCB=200V 100max µA IEBO VEB=6V 100max µA 200min V VEBO 6 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8A 50min∗ IC=10A, IB=1A 2.5max V IC=50mA 24.4±0.2 A PC 200(Tc=25°C)
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2SC3858
2SA1494)
100max
200min
MT-200
50min
20typ
transistor 2sc3858
2SC3858
2sc3858 transistor
2sa1494
characteristics 2SC3858
2sc3858 safe operating area
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2SC3858
Abstract: 2SA1494 2sc3858 transistor transistor 2sc3858 DSA0016508
Text: 2SC3858 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1494 Symbol Conditions Ratings Unit VCB=200V 100max µA VEB=6V 100max µA IC=50mA 200min V Ratings Unit VCBO 200 V ICBO VCEO 200 V IEBO VEBO 6 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8A
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2SC3858
2SA1494)
100max
MT-200
200min
50min
20typ
300typ
2SC3858
2SA1494
2sc3858 transistor
transistor 2sc3858
DSA0016508
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IC 0116 DC
Abstract: ic 0116 ic 4440 0116 ic TS13007 TS13007CZ transistor 400V 8A HIGH CURRENT NPN SILICON TRANSISTOR
Text: TS13007 High Voltage NPN Transistor BVCEO = 400V BVCBO = 700V Ic = 8A VCE SAT , = 3V @ Ic / Ib = 8A / 2A Pin assignment: 1. Base 2. Collector 3. Emitter Features Ordering Information Suitable for switching regulator and motor control High speed switching
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TS13007
TS13007CZ
O-220
IC 0116 DC
ic 0116
ic 4440
0116 ic
TS13007
TS13007CZ
transistor 400V 8A
HIGH CURRENT NPN SILICON TRANSISTOR
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2SC4434
Abstract: npn triple diffused transistor 500v 8a
Text: 2SC4434 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA VCEO 400 V IEBO VEB=10V 100max µA VEBO 10 V V(BR)CEO IC=25mA 400min V 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 25 5 A VCE(sat) IC=8A, IB=1.6A
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2SC4434
MT-100
100max
400min
Pulse30)
10typ
135typ
2SC4434
npn triple diffused transistor 500v 8a
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2SC4434
Abstract: npn triple diffused transistor 500v 8a npn high voltage transistor 500v 8a
Text: 2SC4434 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA VCEO 400 V IEBO VEB=10V 100max µA VEBO 10 V V(BR)CEO IC=25mA 400min V 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 25 5 A VCE(sat) IC=8A, IB=1.6A
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2SC4434
MT-100
100max
400min
Pulse30)
10typ
135typ
2SC4434
npn triple diffused transistor 500v 8a
npn high voltage transistor 500v 8a
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Untitled
Abstract: No abstract text available
Text: Search Results Part number search for devices beginning "BUX61" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BUX61 NPN TO66 200V 8A 20 60 4/3 8MHz 70W
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BUX61"
BUX61
BUX62"
BUX62
BUY81
60MHz
BUY82"
BUY82
BUY82CECC
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BUS11-JQR-B
Abstract: 400V 5A NPN 100W BUV19 PNP 8A 400V TO-3
Text: Search Results Part number search for devices beginning "BUS12" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BUS12 NPN TO3 400V 8A 15 - 5/1 - 125W BUS12A
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BUS12"
BUS12
BUS12A
BUS12ACECC
BUS12A-JQR-B
BUS12CECC
BUS12-JQR-B
BUS11"
BUW49"
BUW49
BUS11-JQR-B
400V 5A NPN 100W
BUV19
PNP 8A 400V TO-3
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vbe 10v, vce 500v NPN Transistor
Abstract: 2SC4298 npn triple diffused transistor 500v 8a
Text: 2SC4298 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 80(Tc=25°C)
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2SC4298
100max
400min
Pulse30)
10typ
85typ
FM100
vbe 10v, vce 500v NPN Transistor
2SC4298
npn triple diffused transistor 500v 8a
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2SC4298
Abstract: npn triple diffused transistor 500v 8a
Text: 2SC4298 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 400min V 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 80(Tc=25°C)
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2SC4298
100max
400min
Pulse30)
10typ
85typ
FM100
2SC4298
npn triple diffused transistor 500v 8a
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2SD2389
Abstract: 2SB1559 in401
Text: Equivalent circuit 2SD2389 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1559 V VCEO 150 VEBO IC Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A 5000min∗ IC=6A, IB=6mA 2.5max
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2SD2389
2SB1559)
MT-100
100max
150min
5000min
2SD2389
2SB1559
in401
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transistor 2SD2389
Abstract: 2SD2389 2SB1559
Text: Equivalent circuit 2SD2389 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1559 V VCEO 150 VEBO IC Unit ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A 5000min∗ IC=6A, IB=6mA 2.5max
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2SD2389
2SB1559)
MT-100
100max
150min
5000min
transistor 2SD2389
2SD2389
2SB1559
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •
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ZXTC6717MC
100mV
-140mV
DS31926
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1348 transistor
Abstract: TRANSISTOR K 1507 POWER TRANSISTOR TO-220 marking A07 ITO-220 TSC148D TSC148DCI TSC148DCZ Transistor 1507 Transistor 1308
Text: TSC148D High Voltage Fast-Switching NPN Power Transistor TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE SAT Features 8A 1.5V @ IC / IB = 5A / 1A Block Diagram ● High Voltage Capability ● Very High Speed Switching
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TSC148D
O-220
ITO-220
TSC148DCZ
TSC148DCI
50pcs
1348 transistor
TRANSISTOR K 1507
POWER TRANSISTOR TO-220
marking A07
ITO-220
TSC148D
Transistor 1507
Transistor 1308
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NPN MARKING 2A
Abstract: transistor marking 2a NPN Transistor 1A 400V IC 0116 DC TS13007B NPN transistor for switching applications, 400V TS13007BCZ
Text: TS13007B High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 8A 3V @ IC / IB = 8A / 2A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type
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TS13007B
O-220
50pcs
TS13007BCZ
NPN MARKING 2A
transistor marking 2a
NPN Transistor 1A 400V
IC 0116 DC
TS13007B
NPN transistor for switching applications, 400V
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IC 0116 DC
Abstract: NPN Transistor 8A transistor b 40 Ic-5A datasheet npn switching transistor Ic 5A marking A07 marking code IC 4A transistor npn 2a switching applications TS13007B TS13007BCZ transistor 2a h
Text: TS13007B High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 8A 3V @ IC / IB = 8A / 2A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type
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TS13007B
O-220
TS13007BCZ
50pcs
IC 0116 DC
NPN Transistor 8A
transistor b 40 Ic-5A datasheet
npn switching transistor Ic 5A
marking A07
marking code IC 4A
transistor npn 2a switching applications
TS13007B
transistor 2a h
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MJF13009
Abstract: 9v dc motor dc motor control circuit 220v dc 220V DC circuits motor control
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJF13009 DESCRIPTION •Collector–Emitter Sustaining Voltage : VCEO SUS = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A ·Switching Time : tf= 0.7 s(Max.)@ IC= 8.0A
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MJF13009
MJF13009
9v dc motor
dc motor control circuit 220v dc
220V DC circuits motor control
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BC337 45V 800mA NPN Transistor
Abstract: TRANSISTOR BC337-25 BC337 BC33740 TRANSISTOR BC337-40 BC337-16 BC337 45V 800mA BC337-40 bc337-40 npn transistor BC-337-16
Text: BC337 SERIES NPN GENERAL PURPOSE TRANSISTORS 5 VOLTAGE 45 POWER 625mW FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 800mA MECHANICAL DATA 1 COLLECTOR Case: TO-92 Terminals: Solderable per MIL-STD-202, Method 208
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BC337
800mA
625mW
MIL-STD-202,
BC337-16:
BC337-25:
BC337-40:
BC337-40
BC337-xx
BC337 45V 800mA NPN Transistor
TRANSISTOR BC337-25
BC33740
TRANSISTOR BC337-40
BC337-16
BC337 45V 800mA
bc337-40 npn transistor
BC-337-16
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2N5943
Abstract: motorola 2961
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 1.2 GHz - 5 0 mAdc NPN SIL IC O N H IG H -F R EQ U EN C Y T R A N SIS T O R NPN S IL IC O N H IG H -F R E Q U E N C Y T R A N SIS T O R NPN SILICO N . . . designed specifically for broadband applications requiring low
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2N5943
2N5943
motorola 2961
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BUX80
Abstract: No abstract text available
Text: /= 7 SGS-THOMSON ^7# IM ^m iC T[i«i] i; BUX80 HIGH VOLTAGE NPN SILICON POWER TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR . FAST SWITCHING SPEED APPLICATIONS . SWITCHING REGULATORS . MOTOR CONTROL . HIGH FREQUENCY AND EFFICENCY CONVERTERS
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BUX80
BUX80
300ns,
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2N4424
Abstract: D39C4 quan-tech GES6220 2N4256 2N4425 2N5174 2N5232 2N5232A 2N5249A
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN 40
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2N4256
2N4424
2N4425
130-b40
2IM5172
2N5174
2N5232
2N5232A
2N5249A
2N5307,
D39C4
quan-tech
GES6220
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE 2SC3964 SWITCHING APPLICATIONS. SOLENOID DRIVE APPLICATIONS. TEMPERATURE COMPENSATED FOR AUDIO AMPLIFIER OUTPUT STAGE. FEATURES: . High DC Current Gain : hpE=500 Min. (Ic=400nA) . Low Saturation Voltage : V CE(sat)-0.5V(Max.)(IC -300mA)
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2SC3964
400nA)
-300mA)
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