Untitled
Abstract: No abstract text available
Text: NPN Bipolar Transistors for AC Adaptors and DC-DC Converters: TTC008, TTC012｜T. Page 1 of 3 NPN Bipolar Transistors for AC Adaptors and DC-DC Converters: TTC008, TTC012 We have developed NPN bipolar transistors for AC adaptors and DC-DC converters. The
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TTC008,
TTC012ï
TTC012
TTC008
AC100
AC200
2SC6010
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Untitled
Abstract: No abstract text available
Text: LFP AK 56 D PHPT610030NK NPN/NPN high power double bipolar transistor 20 October 2014 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. PNP/PNP complement: PHPT610030PK.
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PHPT610030NK
OT1205
LFPAK56D)
PHPT610030PK.
PHPT610030NPK.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: LFP AK 56 D PHPT610035NK NPN/NPN high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. Matched version of PHPT610030NK.
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PHPT610035NK
OT1205
LFPAK56D)
PHPT610030NK.
PHPT610035PK.
PHPT610035NPK.
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: LFP AK 56 D PHPT610030NPK NPN/PNP high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/PNP high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK.
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PHPT610030NPK
OT1205
LFPAK56D)
PHPT610030NK.
PHPT610030PK.
AEC-Q101
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BUD43D2
Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310
Text: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally
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BUD43D2
BUD43D2
BUD43D2:
r14525
BUD43D2/D
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
SMD310
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8 pin ic 3844 for 5 volts
Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 transistor zo 107
Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.
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AT-32063
AT-32063
OT-363
OT-363
SC-70)
5965-1234E
5965-8921E
8 pin ic 3844 for 5 volts
AT-32063-BLK
AT-32063-TR1
transistor zo 107
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transistor zo 107
Abstract: AT-32063 AT-32063-BLK AT-32063-TR1 4046 IC d 1879 sc 107 transistor
Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package.
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AT-32063
AT-32063
OT-363
OT-363
SC-70)
transistor zo 107
AT-32063-BLK
AT-32063-TR1
4046 IC
d 1879
sc 107 transistor
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npn transistor 400 volts.10 amperes
Abstract: No abstract text available
Text: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally
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BUD43D2
BUD43D2:
r14525
BUD43D2/D
npn transistor 400 volts.10 amperes
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MTP8P10
Abstract: MUR105 BUD43D2 MJE210 MPF930 MTP12N10
Text: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally
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BUD43D2
BUD43D2
BUD43D2:
r14525
BUD43D2/D
MTP8P10
MUR105
MJE210
MPF930
MTP12N10
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02D2G
Abstract: 18002d2 motorola transistor dpak marking MJD18002D2 MJD18002D2T4 MJD18002D2T4G MPF930 MTP8P10 transistor j 127
Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot
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MJD18002D2
MJD18002D2
MJD18002D2/D
02D2G
18002d2
motorola transistor dpak marking
MJD18002D2T4
MJD18002D2T4G
MPF930
MTP8P10
transistor j 127
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Abstract: No abstract text available
Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot
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MJD18002D2
MJD18002D2
MJD18002D2/D
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02D2G
Abstract: MJD18002D2T4G 18002d2 MJD18002D2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12
Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot
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MJD18002D2
MJD18002D2
MJD18002D2/D
02D2G
MJD18002D2T4G
18002d2
MJD18002D2T4
MPF930
MTP8P10
MJD18002D2 Motorola
MTP12
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MJD18002D2
Abstract: MJD18002D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 MJD18002D2-1
Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector–Emitter Diode and Built–In Efficient Antisaturation Network http://onsemi.com The MJD18002D2 is a state–of–the–art high speed, high gain
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MJD18002D2
MJD18002D2
r14525
MJD18002D2/D
MJD18002D2T4
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
SMD310
MJD18002D2-1
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dpak 369C
Abstract: No abstract text available
Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network http://onsemi.com The MJD18002D2 is a state−of−the−art high speed, high gain
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MJD18002D2
MJD18002D2/D
dpak 369C
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BCs 43 TRANSISTOR
Abstract: AT-32063 AT-32063-BLK AT-32063-TR1
Text: AT-32063 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package. The devices are unconnected, allowing flexibility in design.
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AT-32063
AT-32063
OT-363
OT-363
SC-70)
5965-8921E
5989-2645EN
BCs 43 TRANSISTOR
AT-32063-BLK
AT-32063-TR1
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sot669 footprint
Abstract: No abstract text available
Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 10 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY
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PHPT60603NY
OT669
LFPAK56)
PHPT60603PY
AECQ-101
sot669 footprint
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PHPT61002NYC 100V, 2 A NPN high power bipolar transistor 9 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC
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PHPT61002NYC
OT669
LFPAK56)
PHPT61002PYC
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AT-41511-BLKG
Abstract: smt a1 transistor NPN zo 103 ma AT-41511 AT-41511-BLK AT-41511-TR1 AT-41533 S21E AT-41511-TR1G 5989-2649EN
Text: AT-41511, AT-41533 General Purpose, Low Noise NPN Silicon Bipolar Transistors Data Sheet Description Features Avago’s AT-41511 and AT-41533 are general purpose NPN bipolar transistors that offer excellent high frequency performance at an economical price. The
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AT-41511,
AT-41533
AT-41511
AT-41533
OT-23,
AT-41511
OT-143.
AT-41511:
AT-41533:
AT-41511-BLKG
smt a1 transistor NPN
zo 103 ma
AT-41511-BLK
AT-41511-TR1
S21E
AT-41511-TR1G
5989-2649EN
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C10535E
Abstract: NE52418 NE52418-T1 transistor GaAS marking 576 NEC heterojunction bipolar transistor MARKING 452 4PIN
Text: DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52418 L to S BAND LOW NOISE AND HIGH GAIN AMPLIFIER NPN GaAs HBT DESCRIPTION The NE52418 is an NPN GaAs HBT Heterojunction Bipolar Transistor developed for L to S band mobile communication equipment. FEATURES
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NE52418
NE52418
OT-343
NE52418-T1
C10535E
NE52418-T1
transistor GaAS marking 576
NEC heterojunction bipolar transistor
MARKING 452 4PIN
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SUT465N
Abstract: npn-pnp dual
Text: SUT465N Semiconductor Dual NPN+PNP complementary Bipolar transistor Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=500mW Max. • 2 NPN+PNP Chips in SOT-26 PKG
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SUT465N
500mW
OT-26
OT-26
KSD-T5P006-000
SUT465N
npn-pnp dual
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PHPT60603NY
Abstract: No abstract text available
Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY
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PHPT60603NY
OT669
LFPAK56)
PHPT60603PY
AECQ-101
PHPT60603NY
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100 amp npn darlington power transistors
Abstract: NTE290A NTE123AP IC 741 amp 10 amp npn darlington power transistors NTE159 NTE2395 nte199 100 amp darlington power transistors power transistor CURRENT SWITCH 0.5 1 AMP
Text: 1995-2012.qxp:QuarkCatalogTempNew 9/11/12 8:56 AM Page 1995 25 Transistors and MOSFETs Silicon Bipolar Transistors Collector to Base V Collector to Emitter (V) Emitter to Base (V) Typical Fwd. Current Gain NPN NPN NPN NPN NPN NPN NPN NPN NPN 0.5 15.0 4.0
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NTE289A¸
NTE385¸
NTE184¸
NTE196¸
NTE181¸
NTE175¸
NTE311¸
NTE85¸
NTE287¸
NTE382
100 amp npn darlington power transistors
NTE290A
NTE123AP
IC 741 amp
10 amp npn darlington power transistors
NTE159
NTE2395
nte199
100 amp darlington power transistors
power transistor CURRENT SWITCH 0.5 1 AMP
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306 marking code transistor
Abstract: AT-32033-TR1G AT-32033 IC 32011 marking code E1 sot23 AT-32011 AT32011 low noise amplifier ckt design at 30 MHz marking AT3 SOT-23 marking 550 sot143
Text: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal
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AT-32011,
AT-32033
AT-32011
AT-32033
AT32011
OT-143.
transisSOT-23
OT-143
306 marking code transistor
AT-32033-TR1G
IC 32011
marking code E1 sot23
low noise amplifier ckt design at 30 MHz
marking AT3 SOT-23
marking 550 sot143
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Untitled
Abstract: No abstract text available
Text: m H EW LETT* PA CK A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains tw o high perform ance NPN bipolar transis
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AT-32063
OT-363
SC-70)
AT-32063
OT-363
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